DMN2046UVT-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 8V~24V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 590mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TSOT-26
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Technische Details DMN2046UVT-13 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V TSOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 590mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: TSOT-26.