DMC62D2SVQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 41V~60V SOT563 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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Technische Details DMC62D2SVQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT563 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V, Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.