DMC3061SVTQ-7-52 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
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Technische Details DMC3061SVTQ-7-52 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 880mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active.