DI330N04D7 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.4A
Drain-source voltage: 40V
Drain current: 330A
On-state resistance: 0.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 157nC
Anzahl je Verpackung: 1 Stücke
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Technische Details DI330N04D7 DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Tc), Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12850 pF @ 20 V.
Weitere Produktangebote DI330N04D7
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DI330N04D7 | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12850 pF @ 20 V |
Produkt ist nicht verfügbar |
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DI330N04D7 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7 Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.4A Drain-source voltage: 40V Drain current: 330A On-state resistance: 0.75mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Gate charge: 157nC |
Produkt ist nicht verfügbar |