DGTD65T50S1PT Diodes Incorporated
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 11.02 EUR |
| 10+ | 9.91 EUR |
| 25+ | 9.38 EUR |
| 100+ | 8.13 EUR |
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Technische Details DGTD65T50S1PT Diodes Incorporated
Description: IGBT 600V-X TO247 TUBE 0.45K, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 80 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: Field Stop, Td (on/off) @ 25°C: 58ns/328ns, Switching Energy: 770µJ (on), 550µJ (off), Test Condition: 400V, 50A, 7.9Ohm, 15V, Gate Charge: 287 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 375 W.
Weitere Produktangebote DGTD65T50S1PT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DGTD65T50S1PT | Hersteller : Diodes Inc |
 Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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DGTD65T50S1PT | Hersteller : Diodes Incorporated |
Description: IGBT 600V-X TO247 TUBE 0.45K Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Supplier Device Package: TO-247 IGBT Type: Field Stop Td (on/off) @ 25°C: 58ns/328ns Switching Energy: 770µJ (on), 550µJ (off) Test Condition: 400V, 50A, 7.9Ohm, 15V Gate Charge: 287 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 375 W |
Produkt ist nicht verfügbar |