DDTC122LE-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: TRANS PREBIAS NPN 150MW SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Supplier Device Package: SOT-523
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 220 Ohms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 752 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 0.58 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.25 EUR |
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Technische Details DDTC122LE-7 Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523, Packaging: Cut Tape (CT), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V, Supplier Device Package: SOT-523, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 220 Ohms, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q101.