DACMH80N1200 DACO Semiconductor
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: HB9434
Electrical mounting: screw
Technology: SiC
Operating temperature: -55...150°C
Mechanical mounting: screw
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 250A
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 34mΩ
Power dissipation: 460W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: HB9434
Electrical mounting: screw
Technology: SiC
Operating temperature: -55...150°C
Mechanical mounting: screw
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 250A
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 34mΩ
Power dissipation: 460W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
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Technische Details DACMH80N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Case: HB9434, Electrical mounting: screw, Technology: SiC, Operating temperature: -55...150°C, Mechanical mounting: screw, Gate-source voltage: -10...20V, Topology: MOSFET half-bridge, Pulsed drain current: 250A, Drain-source voltage: 1.2kV, Drain current: 50A, On-state resistance: 34mΩ, Power dissipation: 460W, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DACMH80N1200
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DACMH80N1200 | Hersteller : DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: HB9434 Electrical mounting: screw Technology: SiC Operating temperature: -55...150°C Mechanical mounting: screw Gate-source voltage: -10...20V Topology: MOSFET half-bridge Pulsed drain current: 250A Drain-source voltage: 1.2kV Drain current: 50A On-state resistance: 34mΩ Power dissipation: 460W Polarisation: unipolar |
Produkt ist nicht verfügbar |