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DACMH200N1200 DACO Semiconductor


DACMH200N1200.pdf Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W
Operating temperature: -55...150°C
Mechanical mounting: screw
Type of module: MOSFET transistor
Case: HB9434
Electrical mounting: screw
Polarisation: unipolar
Power dissipation: 980W
On-state resistance: 15mΩ
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Drain current: 125A
Pulsed drain current: 500A
Drain-source voltage: 1.2kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
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Technische Details DACMH200N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W, Operating temperature: -55...150°C, Mechanical mounting: screw, Type of module: MOSFET transistor, Case: HB9434, Electrical mounting: screw, Polarisation: unipolar, Power dissipation: 980W, On-state resistance: 15mΩ, Technology: SiC, Gate-source voltage: -10...20V, Topology: MOSFET half-bridge, Drain current: 125A, Pulsed drain current: 500A, Drain-source voltage: 1.2kV, Semiconductor structure: transistor/transistor, Anzahl je Verpackung: 1 Stücke.

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DACMH200N1200 Hersteller : DACO Semiconductor DACMH200N1200.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W
Operating temperature: -55...150°C
Mechanical mounting: screw
Type of module: MOSFET transistor
Case: HB9434
Electrical mounting: screw
Polarisation: unipolar
Power dissipation: 980W
On-state resistance: 15mΩ
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Drain current: 125A
Pulsed drain current: 500A
Drain-source voltage: 1.2kV
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar