Produkte > TEXAS INSTRUMENTS > CSD87502Q2T
CSD87502Q2T

CSD87502Q2T Texas Instruments


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87502q2 Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 5A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
auf Bestellung 12500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
250+1.22 EUR
500+ 1.08 EUR
1250+ 0.85 EUR
2500+ 0.8 EUR
6250+ 0.76 EUR
12500+ 0.73 EUR
Mindestbestellmenge: 250
Produktrezensionen
Produktbewertung abgeben

Technische Details CSD87502Q2T Texas Instruments

Description: MOSFET 2N-CH 30V 5A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V, Rds On (Max) @ Id, Vgs: 32.4mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active.

Weitere Produktangebote CSD87502Q2T nach Preis ab 0.77 EUR bis 1.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
CSD87502Q2T CSD87502Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87502q2 MOSFETs 30-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2, 42 mOhm, gate ESD protection 6-WSON -55 to 150
auf Bestellung 7203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.67 EUR
10+ 1.42 EUR
100+ 1.13 EUR
500+ 1.09 EUR
1000+ 0.87 EUR
2500+ 0.81 EUR
5000+ 0.77 EUR
Mindestbestellmenge: 2
CSD87502Q2T CSD87502Q2T Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87502q2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.3W; WSON6; 2x2mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 2.3W
Case: WSON6
Gate-source voltage: ±20V
On-state resistance: 35.5mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 2x2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 274 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.77 EUR
50+ 1.46 EUR
73+ 0.99 EUR
77+ 0.93 EUR
250+ 0.9 EUR
Mindestbestellmenge: 41
CSD87502Q2T CSD87502Q2T Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87502q2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.3W; WSON6; 2x2mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 2.3W
Case: WSON6
Gate-source voltage: ±20V
On-state resistance: 35.5mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 2x2mm
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
41+1.77 EUR
50+ 1.46 EUR
73+ 0.99 EUR
77+ 0.93 EUR
250+ 0.9 EUR
Mindestbestellmenge: 41
CSD87502Q2T CSD87502Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87502q2 Description: MOSFET 2N-CH 30V 5A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
auf Bestellung 12747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.88 EUR
11+ 1.68 EUR
25+ 1.59 EUR
100+ 1.31 EUR
Mindestbestellmenge: 10
CSD87502Q2T CSD87502Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87502q2 Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
CSD87502Q2T CSD87502Q2T Hersteller : Texas Instruments csd87502q2.pdf Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
Produkt ist nicht verfügbar
CSD87502Q2T CSD87502Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87502q2 Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
Produkt ist nicht verfügbar
CSD87502Q2T CSD87502Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87502q2 Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
Produkt ist nicht verfügbar