CSD25484F4T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET P-CH 20V 2.5A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 500mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
auf Bestellung 14750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.89 EUR |
| 500+ | 0.76 EUR |
| 1250+ | 0.62 EUR |
| 2500+ | 0.59 EUR |
| 6250+ | 0.56 EUR |
| 12500+ | 0.53 EUR |
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Technische Details CSD25484F4T Texas Instruments
Description: MOSFET P-CH 20V 2.5A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 94mOhm @ 500mA, 8V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): -12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.42 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V.
Weitere Produktangebote CSD25484F4T nach Preis ab 0.56 EUR bis 1.41 EUR
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CSD25484F4T | Hersteller : Texas Instruments |
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auf Bestellung 4836 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25484F4T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 2.5A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 94mOhm @ 500mA, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
auf Bestellung 15042 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25484F4T | Hersteller : Texas Instruments |
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| CSD25484F4T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -22A; 500mW Kind of package: reel; tape Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -22A Mounting: SMD Case: PICOSTAR3 Drain-source voltage: -20V Drain current: -2.5A On-state resistance: 825mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD25484F4T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -22A; 500mW Kind of package: reel; tape Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -22A Mounting: SMD Case: PICOSTAR3 Drain-source voltage: -20V Drain current: -2.5A On-state resistance: 825mΩ |
Produkt ist nicht verfügbar |