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BZD27C4V3P-M-18 Vishay General Semiconductor - Diodes Division
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Description: DIODE ZENER 4.3V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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Technische Details BZD27C4V3P-M-18 Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 800MW DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 175°C, Voltage - Zener (Nom) (Vz): 4.3 V, Impedance (Max) (Zzt): 7 Ohms, Supplier Device Package: DO-219AB (SMF), Power - Max: 800 mW, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA, Current - Reverse Leakage @ Vr: 25 µA @ 1 V.