BYVF32-200-E3/45 Vishay General Semiconductor
auf Bestellung 1737 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.44 EUR |
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Technische Details BYVF32-200-E3/45 Vishay General Semiconductor
Description: DIODE ARRAY GP 200V 18A ITO220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 18A, Supplier Device Package: ITO-220AB, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote BYVF32-200-E3/45 nach Preis ab 1.25 EUR bis 2.64 EUR
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BYVF32-200-E3/45 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE ARRAY GP 200V 18A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 1774 Stücke: Lieferzeit 10-14 Tag (e) |
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