BYD17J,115 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: DIODE AVALANCHE 600V 1.5A MELF
Packaging: Tape & Reel (TR)
Package / Case: SOD-87
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Avalanche
Capacitance @ Vr, F: 21pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE AVALANCHE 600V 1.5A MELF
Packaging: Tape & Reel (TR)
Package / Case: SOD-87
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Avalanche
Capacitance @ Vr, F: 21pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details BYD17J,115 NXP USA Inc.
Description: DIODE AVALANCHE 600V 1.5A MELF, Packaging: Tape & Reel (TR), Package / Case: SOD-87, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Avalanche, Capacitance @ Vr, F: 21pF @ 0V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.