BSC090N03MS G

BSC090N03MS G Infineon Technologies


Infineon-BSC090N03MSG-DS-v02_01-en-1225570.pdf Hersteller: Infineon Technologies
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
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Technische Details BSC090N03MS G Infineon Technologies

Description: BSC090N03 - 12V-300V N-CHANNEL P, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V.

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BSC090N03MSG Hersteller : infineon INFNS27233-1.pdf?t.download=true&u=5oefqw 07+ SOP-8
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BSC090N03MSG Hersteller : infineon INFNS27233-1.pdf?t.download=true&u=5oefqw 08+
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BSC090N03MSG BSC090N03MSG Hersteller : Infineon Technologies INFNS27233-1.pdf?t.download=true&u=5oefqw Description: BSC090N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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