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BSC080P03LSGAUMA1

BSC080P03LSGAUMA1 Infineon Technologies

BSC080P03LS+G_Rev1.03.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304314dca38901154a7800621a6c Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 16A/30A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.66 EUR
10000+ 1.61 EUR
Mindestbestellmenge: 5000
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Technische Details BSC080P03LSGAUMA1 Infineon Technologies

Description: MOSFET P-CH 30V 16A/30A TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V.

Weitere Produktangebote BSC080P03LSGAUMA1 nach Preis ab 1.73 EUR bis 3.82 EUR

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Preis ohne MwSt
BSC080P03LSGAUMA1 BSC080P03LSGAUMA1 Hersteller : Infineon Technologies BSC080P03LS+G_Rev1.03.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304314dca38901154a7800621a6c Description: MOSFET P-CH 30V 16A/30A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
auf Bestellung 13616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.82 EUR
10+ 3.18 EUR
100+ 2.53 EUR
500+ 2.14 EUR
1000+ 1.82 EUR
2000+ 1.73 EUR
Mindestbestellmenge: 5
BSC080P03LSGAUMA1 BSC080P03LSGAUMA1 Hersteller : Infineon Technologies bsc080p03lsg_rev1.01.pdf Trans MOSFET P-CH 30V 16A Automotive 8-Pin TDSON EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)