BSC046N10NS3GATMA1 Infineon Technologies
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Technische Details BSC046N10NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 17A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 120µA, Supplier Device Package: PG-TDSON-8-7, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V.
Weitere Produktangebote BSC046N10NS3GATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BSC046N10NS3GATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 17A Automotive 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC046N10NS3GATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 17A Automotive 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC046N10NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC046N10NS3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 17A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: PG-TDSON-8-7 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V |
Produkt ist nicht verfügbar |
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BSC046N10NS3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 17A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: PG-TDSON-8-7 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V |
Produkt ist nicht verfügbar |
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BSC046N10NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |