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BSC026N02KSGAUMA1 Infineon Technologies

Name: BSC026N02KSGAUMA1
Brand: Infineon Technologies
SKU: 54811230-3
Price: 1.31 EUR
Availability: InStock

BSC026N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c2a4280019

Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V

auf Bestellung 26892 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
363+	1.31 EUR

Mindestbestellmenge: 363

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Technische Details BSC026N02KSGAUMA1 Infineon Technologies

Description: MOSFET N-CH 20V 25A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 200µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V.

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