BF5030WH6327XTSA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BF5030WH6327XTSA1 - BF5030 POWER FIELD-EFFECT TRANSISTOR, N
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - BF5030WH6327XTSA1 - BF5030 POWER FIELD-EFFECT TRANSISTOR, N
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BF5030WH6327XTSA1 ROCHESTER ELECTRONICS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 8V; 25mA; 200mW; SOT343; SMT, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of transistor: RF, Drain-source voltage: 8V, Drain current: 25mA, Power dissipation: 0.2W, Case: SOT343, Gate-source voltage: ±6V, Kind of package: reel; tape, Frequency: 800MHz, Kind of channel: depleted, Features of semiconductor devices: dual gate, Electrical mounting: SMT, Open-loop gain: 24dB.
Weitere Produktangebote BF5030WH6327XTSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BF5030WH6327XTSA1 | Hersteller : Infineon Technologies | Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin(3+Tab) SOT-343 T/R |
Produkt ist nicht verfügbar |
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BF5030WH6327XTSA1 | Hersteller : Infineon Technologies |
Description: FET RF 8V 800MHZ SOT343 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Current Rating (Amps): 25mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Gain: 24dB Technology: MOSFET Noise Figure: 1.3dB Supplier Device Package: PG-SOT343-4-1 Voltage - Rated: 8 V Voltage - Test: 3 V Current - Test: 10 mA |
Produkt ist nicht verfügbar |
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BF5030WH6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 8V; 25mA; 200mW; SOT343; SMT Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 8V Drain current: 25mA Power dissipation: 0.2W Case: SOT343 Gate-source voltage: ±6V Kind of package: reel; tape Frequency: 800MHz Kind of channel: depleted Features of semiconductor devices: dual gate Electrical mounting: SMT Open-loop gain: 24dB |
Produkt ist nicht verfügbar |