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BC 846U E6327

BC 846U E6327 Infineon Technologies

Infineon-BC846S_BC846U_BC847S-DS-v01_01-en[1]-1226167.pdf Hersteller: Infineon Technologies
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR ARRAYS
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Lieferzeit 10-14 Tag (e)
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5+0.64 EUR
10+ 0.52 EUR
100+ 0.35 EUR
1000+ 0.2 EUR
3000+ 0.17 EUR
9000+ 0.15 EUR
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Technische Details BC 846U E6327 Infineon Technologies

Description: BIPOLAR GEN PURPOSE TRANSISTOR, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: PG-SC74-6-1, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

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BC846UE6327 BC846UE6327 Hersteller : Infineon Technologies INFNS17743-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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