BAS16W,135 NXP USA Inc.
Hersteller: NXP USA Inc.Description: DIODE GEN PURP 100V 175MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 175mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 1020000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15000+ | 0.032 EUR |
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Technische Details BAS16W,135 NXP USA Inc.
Description: DIODE GEN PURP 100V 175MA SOT323, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 175mA, Supplier Device Package: SOT-323, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Qualification: AEC-Q101.