B2D10065Q BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8
Max. forward voltage: 1.67V
Leakage current: 20µA
Max. forward impulse current: 70A
Kind of package: reel; tape
Power dissipation: 54W
Anzahl je Verpackung: 1 Stücke
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Technische Details B2D10065Q BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 10A, Semiconductor structure: single diode, Case: DFN8x8, Max. forward voltage: 1.67V, Leakage current: 20µA, Max. forward impulse current: 70A, Kind of package: reel; tape, Power dissipation: 54W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D10065Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| B2D10065Q | Hersteller : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8 Max. forward voltage: 1.67V Leakage current: 20µA Max. forward impulse current: 70A Kind of package: reel; tape Power dissipation: 54W |
Produkt ist nicht verfügbar |