APTM100A12STG Microsemi Corporation
Hersteller: Microsemi CorporationDescription: MOSFET 2N-CH 1000V 68A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 68A
Input Capacitance (Ciss) (Max) @ Vds: 17400pF @ 25V
Rds On (Max) @ Id, Vgs: 120mOhm @ 34A, 10V
Gate Charge (Qg) (Max) @ Vgs: 616nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP3
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Technische Details APTM100A12STG Microsemi Corporation
Description: MOSFET 2N-CH 1000V 68A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1250W, Drain to Source Voltage (Vdss): 1000V (1kV), Current - Continuous Drain (Id) @ 25°C: 68A, Input Capacitance (Ciss) (Max) @ Vds: 17400pF @ 25V, Rds On (Max) @ Id, Vgs: 120mOhm @ 34A, 10V, Gate Charge (Qg) (Max) @ Vgs: 616nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP3.