APT56F60L MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264
Case: TO264
Mounting: THT
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 210A
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264
Case: TO264
Mounting: THT
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 210A
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
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Technische Details APT56F60L MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264, Case: TO264, Mounting: THT, Power dissipation: 1.04kW, Polarisation: unipolar, Gate charge: 280nC, Technology: POWER MOS 8®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 210A, Drain-source voltage: 600V, Drain current: 38A, On-state resistance: 0.11Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT56F60L
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT56F60L | Hersteller : Microsemi Power Products Group | Description: MOSFET N-CH 600V 60A TO-264 |
Produkt ist nicht verfügbar |
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APT56F60L | Hersteller : Microchip Technology | MOSFETs FREDFET MOS8 600 V 56 A TO-264 |
Produkt ist nicht verfügbar |
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APT56F60L | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264 Case: TO264 Mounting: THT Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 280nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 210A Drain-source voltage: 600V Drain current: 38A On-state resistance: 0.11Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |