AOT66916L Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 35.5/120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
Description: MOSFET N-CH 100V 35.5/120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
auf Bestellung 1225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.24 EUR |
50+ | 3.35 EUR |
100+ | 2.87 EUR |
500+ | 2.81 EUR |
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Technische Details AOT66916L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 35.5/120A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 8.3W (Ta), 277W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V.
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Verfügbarkeit |
Preis ohne MwSt |
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AOT66916L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 35.5A; 8.3W Mounting: THT Case: TO220-3 Drain-source voltage: 100V Drain current: 35.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 78nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
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AOT66916L | Hersteller : Alpha & Omega Semiconductor | N-Channel MOSFET |
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AOT66916L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 35.5A; 8.3W Mounting: THT Case: TO220-3 Drain-source voltage: 100V Drain current: 35.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 78nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |