AOT10B60D ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ
Mounting: THT
Turn-on time: 25ns
Turn-off time: 80.8ns
Type of transistor: IGBT
Collector-emitter saturation voltage: 1.53V
Gate-emitter voltage: ±20V
Power dissipation: 82W
Kind of package: tube
Gate charge: 17.4nC
Collector-emitter voltage: 600V
Turn-on switching energy: 0.26mJ
Turn-off switching energy: 0.07mJ
Collector current: 10A
Case: TO220
Pulsed collector current: 40A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ
Mounting: THT
Turn-on time: 25ns
Turn-off time: 80.8ns
Type of transistor: IGBT
Collector-emitter saturation voltage: 1.53V
Gate-emitter voltage: ±20V
Power dissipation: 82W
Kind of package: tube
Gate charge: 17.4nC
Collector-emitter voltage: 600V
Turn-on switching energy: 0.26mJ
Turn-off switching energy: 0.07mJ
Collector current: 10A
Case: TO220
Pulsed collector current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 261 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
37+ | 1.94 EUR |
42+ | 1.72 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
500+ | 1.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOT10B60D ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 600V 20A 163W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 10ns/72ns, Switching Energy: 260µJ (on), 70µJ (off), Test Condition: 400V, 10A, 30Ohm, 15V, Gate Charge: 17.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 163 W.
Weitere Produktangebote AOT10B60D nach Preis ab 1.43 EUR bis 2.57 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AOT10B60D | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ Mounting: THT Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Collector-emitter saturation voltage: 1.53V Gate-emitter voltage: ±20V Power dissipation: 82W Kind of package: tube Gate charge: 17.4nC Collector-emitter voltage: 600V Turn-on switching energy: 0.26mJ Turn-off switching energy: 0.07mJ Collector current: 10A Case: TO220 Pulsed collector current: 40A |
auf Bestellung 261 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
AOT10B60D | Hersteller : ALPHA&OMEGA |
20A; 600V; 163W; IGBT w/ Diode AOT10B60D TAOT10b60d Anzahl je Verpackung: 10 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||
AOT10B60D | Hersteller : Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
||||||||||||
AOT10B60D | Hersteller : Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163W 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
||||||||||||
AOT10B60D | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 20A 163W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 163 W |
Produkt ist nicht verfügbar |