![AON2707 AON2707](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4955/785;PO-00065;;6.jpg)
AON2707 Alpha & Omega Semiconductor Inc.
![AON2707.pdf](/images/adobe-acrobat.png)
Description: MOSFET P-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details AON2707 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-DFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V.