A5G26H110NT4 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET GAN 48V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-LDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.496GHz ~ 2.69GHz
Power - Output: 15W
Gain: 17.7dB
Technology: GaN
Supplier Device Package: 6-PDFN (7x6.5)
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 50 mA
Description: RF MOSFET GAN 48V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-LDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.496GHz ~ 2.69GHz
Power - Output: 15W
Gain: 17.7dB
Technology: GaN
Supplier Device Package: 6-PDFN (7x6.5)
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 50 mA
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Technische Details A5G26H110NT4 NXP USA Inc.
Description: RF MOSFET GAN 48V 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-LDFN Exposed Pad, Mounting Type: Surface Mount, Frequency: 2.496GHz ~ 2.69GHz, Power - Output: 15W, Gain: 17.7dB, Technology: GaN, Supplier Device Package: 6-PDFN (7x6.5), Part Status: Active, Voltage - Rated: 125 V, Voltage - Test: 48 V, Current - Test: 50 mA.
Weitere Produktangebote A5G26H110NT4
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
A5G26H110NT4 | Hersteller : NXP Semiconductors | GaN FETs Airfast RF Power GaN Amplifier, 2496-2690 MHz, 15 W Avg., 48 V |
Produkt ist nicht verfügbar |