A2T20H330W24NR6 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM1230-42
Packaging: Tape & Reel (TR)
Package / Case: OM-1230-4L2L
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 1.88GHz ~ 2.025GHz
Power - Output: 229W
Gain: 15.9dB
Technology: LDMOS
Supplier Device Package: OM-1230-4L2L
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 700 mA
Description: RF MOSFET LDMOS 28V OM1230-42
Packaging: Tape & Reel (TR)
Package / Case: OM-1230-4L2L
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 1.88GHz ~ 2.025GHz
Power - Output: 229W
Gain: 15.9dB
Technology: LDMOS
Supplier Device Package: OM-1230-4L2L
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 700 mA
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Technische Details A2T20H330W24NR6 NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM1230-42, Packaging: Tape & Reel (TR), Package / Case: OM-1230-4L2L, Current Rating (Amps): 10µA, Mounting Type: Chassis Mount, Frequency: 1.88GHz ~ 2.025GHz, Power - Output: 229W, Gain: 15.9dB, Technology: LDMOS, Supplier Device Package: OM-1230-4L2L, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 700 mA.
Weitere Produktangebote A2T20H330W24NR6
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Verfügbarkeit |
Preis ohne MwSt |
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A2T20H330W24NR6 | Hersteller : NXP / Freescale | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1880-2025 MHz, 71 W Avg., 28 V |
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