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8.0SMDJ51A

8.0SMDJ51A Littelfuse


littelfuse_tvs_diode_8_0smdj_datasheet.pdf.pdf Hersteller: Littelfuse
ESD Protection Diodes / TVS Diodes TVS 8KW 51V 5%UNI
auf Bestellung 2949 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.76 EUR
1000+ 5.1 EUR
3000+ 3.03 EUR
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Technische Details 8.0SMDJ51A Littelfuse

Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 8kW; 56.7÷62.7V; 97.1A; unidirectional; ±5%; DO214AB, Type of diode: TVS, Peak pulse power dissipation: 8kW, Max. off-state voltage: 51V, Breakdown voltage: 56.7...62.7V, Max. forward impulse current: 97.1A, Semiconductor structure: unidirectional, Tolerance: ±5%, Case: DO214AB, Mounting: SMD, Leakage current: 5µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Anzahl je Verpackung: 3000 Stücke.

Weitere Produktangebote 8.0SMDJ51A

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
8.0SMDJ51A 8.0SMDJ51A Hersteller : LITTELFUSE 8.0SMDJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 56.7÷62.7V; 97.1A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 8kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 97.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
8.0SMDJ51A 8.0SMDJ51A Hersteller : Littelfuse Inc. littelfuse_tvs_diode_8_0smdj_datasheet.pdf.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Produkt ist nicht verfügbar
8.0SMDJ51A 8.0SMDJ51A Hersteller : Littelfuse Inc. littelfuse_tvs_diode_8_0smdj_datasheet.pdf.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Produkt ist nicht verfügbar
8.0SMDJ51A 8.0SMDJ51A Hersteller : LITTELFUSE 8.0SMDJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 56.7÷62.7V; 97.1A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 8kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 97.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar