2SD655ETZ-E Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: 0.7A, 15V, NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
auf Bestellung 19000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3245+ | 0.14 EUR |
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Technische Details 2SD655ETZ-E Renesas Electronics Corporation
Description: 0.7A, 15V, NPN, Packaging: Bulk, Part Status: Active, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: TO-92, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 500 mW.