2SD1312(0)-T-AZ Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 200mA, 1V
Frequency - Transition: 120MHz
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 650+ | 0.74 EUR |
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Technische Details 2SD1312(0)-T-AZ Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN, Packaging: Bulk, Package / Case: 3-SSIP, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 200mA, 1V, Frequency - Transition: 120MHz, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W.