2N7002KDW-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5643 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.29 EUR |
| 336+ | 0.21 EUR |
| 807+ | 0.089 EUR |
| 962+ | 0.074 EUR |
| 1313+ | 0.054 EUR |
| 1389+ | 0.051 EUR |
| 3000+ | 0.05 EUR |
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Produktbewertung abgeben
Technische Details 2N7002KDW-AU_R1_000A1 PanJit Semiconductor
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V, Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002KDW-AU_R1_000A1 nach Preis ab 0.046 EUR bis 0.39 EUR
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2N7002KDW-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 5643 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002KDW-AU_R1_000A1 | Hersteller : Panjit |
MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected |
auf Bestellung 32390 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KDW-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5771 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KDW-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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