Technische Details 20KPA192A-B Littelfuse Inc.
Category: Unidirectional THT transil diodes, Description: Diode: TVS; 20kW; 225.2V; 65.4A; unidirectional; ±5%; P600; bulk, Kind of package: bulk, Max. off-state voltage: 192V, Semiconductor structure: unidirectional, Max. forward impulse current: 65.4A, Breakdown voltage: 225.2V, Leakage current: 2µA, Type of diode: TVS, Tolerance: ±5%, Case: P600, Features of semiconductor devices: glass passivated, Mounting: THT, Peak pulse power dissipation: 20kW, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 20KPA192A-B
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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20KPA192A-B | Hersteller : LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 20kW; 225.2V; 65.4A; unidirectional; ±5%; P600; bulk Kind of package: bulk Max. off-state voltage: 192V Semiconductor structure: unidirectional Max. forward impulse current: 65.4A Breakdown voltage: 225.2V Leakage current: 2µA Type of diode: TVS Tolerance: ±5% Case: P600 Features of semiconductor devices: glass passivated Mounting: THT Peak pulse power dissipation: 20kW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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20KPA192A/B | Hersteller : YAGEO |
Description: TVS P600 192V 309V BOX Packaging: Tape & Box (TB) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 65.4A Voltage - Reverse Standoff (Typ): 192V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 214.5V Voltage - Clamping (Max) @ Ipp: 309V Power - Peak Pulse: 20000W (20kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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20KPA192A-B | Hersteller : Littelfuse | ESD Protection Diodes / TVS Diodes TVS Hi-Power Diode Axial |
Produkt ist nicht verfügbar |
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20KPA192A-B | Hersteller : LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 20kW; 225.2V; 65.4A; unidirectional; ±5%; P600; bulk Kind of package: bulk Max. off-state voltage: 192V Semiconductor structure: unidirectional Max. forward impulse current: 65.4A Breakdown voltage: 225.2V Leakage current: 2µA Type of diode: TVS Tolerance: ±5% Case: P600 Features of semiconductor devices: glass passivated Mounting: THT Peak pulse power dissipation: 20kW |
Produkt ist nicht verfügbar |