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1N5822T/R EIC SEMICONDUCTOR INC.
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Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1250+ | 0.65 EUR |
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Technische Details 1N5822T/R EIC SEMICONDUCTOR INC.
Description: DIODE SCHOTTKY 40V 3A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A, Current - Reverse Leakage @ Vr: 2 mA @ 40 V.
Weitere Produktangebote 1N5822T/R
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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1N5822/TR | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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1N5822/TR | Hersteller : Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
Produkt ist nicht verfügbar |
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1N5822/TR | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |