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1N5821HB0G Taiwan Semiconductor Corporation
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Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details 1N5821HB0G Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD, Packaging: Bulk, Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 200pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A, Current - Reverse Leakage @ Vr: 500 µA @ 30 V, Grade: Automotive, Qualification: AEC-Q101.