Produkte > PANASONIC ELECTRONIC COMPONENTS > Alle Produkte des Herstellers PANASONIC ELECTRONIC COMPONENTS (107556) > Seite 573 nach 1793
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MA2YD2800L | Panasonic Electronic Components |
 Description: DIODE SCHOTTKY 30V 1.5A MINI2-F1Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 13 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 10V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: Mini2-F1 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
Produkt ist nicht verfügbar |
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MA2Z0300AL | Panasonic Electronic Components |
Description: DIODE GEN PURP 6V 150MA SMINI2 |
Produkt ist nicht verfügbar |
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MA3D649 | Panasonic Electronic Components |
Description: DIODE ARRAY GP 200V 5A TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2.5 A Current - Reverse Leakage @ Vr: 20 µA @ 200 V |
Produkt ist nicht verfügbar |
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MA3D650 | Panasonic Electronic Components |
Description: DIODE ARR GP 200V 10A TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
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MA3D690 | Panasonic Electronic Components |
Description: DIODE GEN PURP 200V 5A TO220D |
Produkt ist nicht verfügbar |
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MA3D749 | Panasonic Electronic Components |
Description: DIODE ARR SCHOT 40V 5A TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
Produkt ist nicht verfügbar |
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MA3D749A | Panasonic Electronic Components |
Description: DIODE ARR SCHOT 45V 5A TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
Produkt ist nicht verfügbar |
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MA3D750 | Panasonic Electronic Components |
Description: DIODE ARR SCHOTT 40V TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 3 mA @ 40 V |
Produkt ist nicht verfügbar |
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MA3D750A | Panasonic Electronic Components |
Description: DIODE ARR SCHOTT 45V TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 3 mA @ 45 V |
Produkt ist nicht verfügbar |
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MA3D752 | Panasonic Electronic Components |
Description: DIODE ARR SCHOTT 40V TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 5 mA @ 40 V |
Produkt ist nicht verfügbar |
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MA3D752A | Panasonic Electronic Components |
Description: DIODE ARR SCHOTT 45V TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
Produkt ist nicht verfügbar |
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MA3D756 | Panasonic Electronic Components |
Description: DIODE ARR SCHOTT 60V TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Current - Reverse Leakage @ Vr: 3 mA @ 60 V |
Produkt ist nicht verfügbar |
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MA3D761 | Panasonic Electronic Components |
Description: DIODE ARR SCHOTT 90V TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Current - Reverse Leakage @ Vr: 3 mA @ 90 V |
Produkt ist nicht verfügbar |
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MA3D799 | Panasonic Electronic Components |
Description: DIODE ARR SCHOTT 30V TO220D-A1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220D-A1 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A Current - Reverse Leakage @ Vr: 3 mA @ 30 V |
Produkt ist nicht verfügbar |
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MA3G655 | Panasonic Electronic Components |
Description: DIODE ARRAY GP 300V 20A TO3F-A1 |
Produkt ist nicht verfügbar |
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MA3S781F0L | Panasonic Electronic Components |
Description: DIODE ARRAY SCHOTTKY 30V SSMINI3 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MA3SD29F0L | Panasonic Electronic Components |
Description: DIODE ARRAY SCHOTTKY 30V SSMINI3 |
Produkt ist nicht verfügbar |
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MA3SE0100L | Panasonic Electronic Components |
Description: DIODE ARRAY SCHOTTKY 20V SSMINI3 |
Produkt ist nicht verfügbar |
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MA3U74900L | Panasonic Electronic Components |
Description: DIODE ARRAY SCHOTTKY 40V 5A U-G2 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: U-G2 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
Produkt ist nicht verfügbar |
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MA3X028TAL | Panasonic Electronic Components |
Description: DIODE GEN PURP 6V 70MA MINI3-G1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 70mA Supplier Device Package: Mini3-G1 Operating Temperature - Junction: 125°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 6 V Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 3 mA Current - Reverse Leakage @ Vr: 1 µA @ 6 V |
Produkt ist nicht verfügbar |
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MA3X028WAL | Panasonic Electronic Components |
Description: DIODE GEN PURP 6V 100MA MINI3-G1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 100mA Supplier Device Package: Mini3-G1 Operating Temperature - Junction: 125°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 6 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 mA Current - Reverse Leakage @ Vr: 1 µA @ 6 V |
Produkt ist nicht verfügbar |
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MA3X10000L | Panasonic Electronic Components |
Description: DIODE GEN PURP 200V 100MA SMINI3 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MA3X78900L | Panasonic Electronic Components |
Description: DIODE SCHOTTKY 60V 500MA MINI3 |
Produkt ist nicht verfügbar |
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MA4S11100L | Panasonic Electronic Components |
Description: DIODE ARRAY SCHOTTKY 80V SSMINI4 |
Produkt ist nicht verfügbar |
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MA4X16000L | Panasonic Electronic Components |
Description: DIODE ARRAY GP 40V 100MA MINI4 |
Produkt ist nicht verfügbar |
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MA4X160A0L | Panasonic Electronic Components |
Description: DIODE ARRAY GP 80V 100MA MINI4 |
Produkt ist nicht verfügbar |
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MA4X19400L | Panasonic Electronic Components |
Description: DIODE ARRAY SCHOTTKY 40V MINI4 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MA5J002E0L | Panasonic Electronic Components |
Description: DIODE ARRAY GP 80V 100MA SMINI5 |
Produkt ist nicht verfügbar |
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MA6X12200L | Panasonic Electronic Components |
Description: DIODE ARRAY GP 80V 100MA MINI6 |
Produkt ist nicht verfügbar |
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MA6X12300L | Panasonic Electronic Components |
Description: DIODE ARRAY GP 80V 100MA MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 ns Technology: Standard Diode Configuration: 2 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: Mini6-G2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V |
Produkt ist nicht verfügbar |
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MA6X12600L | Panasonic Electronic Components |
Description: DIODE ARRAY GP 80V 100MA MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Standard Diode Configuration: 2 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: MINI6-G1 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V |
Produkt ist nicht verfügbar |
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MA6X12900L | Panasonic Electronic Components |
Description: DIODE ARRAY GP 200V 200MA MINI6 |
Produkt ist nicht verfügbar |
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MA6Z12100L | Panasonic Electronic Components |
Description: DIODE ARRAY GP 80V 100MA SMINI6 |
Produkt ist nicht verfügbar |
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MALM062H0L | Panasonic Electronic Components |
Description: TVS DIODE 4V SSMINI5-F1 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MALS06200L | Panasonic Electronic Components |
Description: TVS DIODE 4VWM SSMINI2 |
Produkt ist nicht verfügbar |
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MALS06800L | Panasonic Electronic Components |
Description: TVS DIODE 4VWM SSMINI2 |
Produkt ist nicht verfügbar |
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MALT062H0L | Panasonic Electronic Components |
Description: TVS DIODE 4VWM SSMINI3-F2 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Voltage - Reverse Standoff (Typ): 4V Supplier Device Package: SSMini3-F2 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
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MTM231100L | Panasonic Electronic Components |
Description: MOSFET P-CH 12V 4A SMINI-3 |
Produkt ist nicht verfügbar |
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MTM231230L | Panasonic Electronic Components |
Description: MOSFET P-CH 20V 3A SMINI3-G1 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: SMini3-G1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
Produkt ist nicht verfügbar |
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MTM232230L | Panasonic Electronic Components |
Description: MOSFET N-CH 20V 4.5A SMINI3-G1 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: SMini3-G1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V |
Produkt ist nicht verfügbar |
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NP0450100A | Panasonic Electronic Components | Description: TRANS 2NPN 50V 0.1A SSSMINI |
Produkt ist nicht verfügbar |
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NP062AN00A | Panasonic Electronic Components |
Description: TRANS 2NPN PREBIAS SSSMINI6 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP063D300A | Panasonic Electronic Components |
Description: TRANS PREBIAS NPN/PNP SSSMINI6 |
Produkt ist nicht verfügbar |
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NP0A54700A | Panasonic Electronic Components |
 Description: TRANS 2NPN 7V 0.01A SSSMINI6Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 125°C (TJ) Power - Max: 50mW Current - Collector (Ic) (Max): 10mA Voltage - Collector Emitter Breakdown (Max): 7V Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 1V / 80 @ 1mA, 1V Frequency - Transition: 4GHz Supplier Device Package: SSSMini6-F1 |
Produkt ist nicht verfügbar |
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NP0G3A000A | Panasonic Electronic Components |
Description: TRANS PREBIAS NPN/PNP SSSMINI6 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP0G3D300A | Panasonic Electronic Components |
Description: TRANS PREBIAS NPN/PNP SSSMINI6 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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UNR32A700L | Panasonic Electronic Components |
Description: TRANS PREBIAS NPN 100MW SSSMINI3 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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UNR411100A | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: NS-B1 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 80 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
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UNR411400A | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: NS-B1 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 80 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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UNR41160RA | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: NS-B1 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 80 MHz Resistor - Base (R1): 4.7 kOhms |
Produkt ist nicht verfügbar |
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UNR411800A | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Supplier Device Package: NS-B1 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 80 MHz Resistor - Base (R1): 510 Ohms Resistor - Emitter Base (R2): 5.1 kOhms |
Produkt ist nicht verfügbar |
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UNR411900A | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: NS-B1 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 80 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
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UNR411E00A | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: NS-B1 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 80 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
Produkt ist nicht verfügbar |
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UNR411H00A | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: NS-B1 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 80 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
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UNR412100A | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V Supplier Device Package: NS-A1 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
Produkt ist nicht verfügbar |
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UNR412200A | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V Supplier Device Package: NS-A1 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
Produkt ist nicht verfügbar |
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UNR412300A | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V Supplier Device Package: NS-A1 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
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UNR42100RA | Panasonic Electronic Components |
Description: TRANS PREBIAS NPN 300MW NS-B1 Packaging: Tape & Box (TB) Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: NS-B1 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 47 kOhms |
Produkt ist nicht verfügbar |
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UNR421100A | Panasonic Electronic Components |
Description: TRANS PREBIAS NPN 300MW NS-B1 |
Produkt ist nicht verfügbar |
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UNR421200A | Panasonic Electronic Components |
Description: TRANS PREBIAS NPN 300MW NS-B1 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| MA2YD2800L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE SCHOTTKY 30V 1.5A MINI2-F1
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 13 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: Mini2-F1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1.5A MINI2-F1
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 13 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: Mini2-F1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
| MA2Z0300AL |
|
Hersteller: Panasonic Electronic Components
Description: DIODE GEN PURP 6V 150MA SMINI2
Description: DIODE GEN PURP 6V 150MA SMINI2
Produkt ist nicht verfügbar
| MA3D649 |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY GP 200V 5A TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Description: DIODE ARRAY GP 200V 5A TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Produkt ist nicht verfügbar
| MA3D650 |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARR GP 200V 10A TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE ARR GP 200V 10A TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
| MA3D690 |
|
Hersteller: Panasonic Electronic Components
Description: DIODE GEN PURP 200V 5A TO220D
Description: DIODE GEN PURP 200V 5A TO220D
Produkt ist nicht verfügbar
| MA3D749 |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARR SCHOT 40V 5A TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE ARR SCHOT 40V 5A TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
| MA3D749A |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARR SCHOT 45V 5A TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOT 45V 5A TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
| MA3D750 |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARR SCHOTT 40V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Description: DIODE ARR SCHOTT 40V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Produkt ist nicht verfügbar
| MA3D750A |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARR SCHOTT 45V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Description: DIODE ARR SCHOTT 45V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Produkt ist nicht verfügbar
| MA3D752 |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARR SCHOTT 40V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
Description: DIODE ARR SCHOTT 40V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
Produkt ist nicht verfügbar
| MA3D752A |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARR SCHOTT 45V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE ARR SCHOTT 45V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Produkt ist nicht verfügbar
| MA3D756 |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARR SCHOTT 60V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
Description: DIODE ARR SCHOTT 60V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
Produkt ist nicht verfügbar
| MA3D761 |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARR SCHOTT 90V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 90 V
Description: DIODE ARR SCHOTT 90V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 90 V
Produkt ist nicht verfügbar
| MA3D799 |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARR SCHOTT 30V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Description: DIODE ARR SCHOTT 30V TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Produkt ist nicht verfügbar
| MA3G655 |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY GP 300V 20A TO3F-A1
Description: DIODE ARRAY GP 300V 20A TO3F-A1
Produkt ist nicht verfügbar
| MA3S781F0L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 30V SSMINI3
Description: DIODE ARRAY SCHOTTKY 30V SSMINI3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| MA3SD29F0L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 30V SSMINI3
Description: DIODE ARRAY SCHOTTKY 30V SSMINI3
Produkt ist nicht verfügbar
| MA3SE0100L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 20V SSMINI3
Description: DIODE ARRAY SCHOTTKY 20V SSMINI3
Produkt ist nicht verfügbar
| MA3U74900L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 40V 5A U-G2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: U-G2
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V 5A U-G2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: U-G2
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
| MA3X028TAL |
|
Hersteller: Panasonic Electronic Components
Description: DIODE GEN PURP 6V 70MA MINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 70mA
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 6 V
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 3 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6 V
Description: DIODE GEN PURP 6V 70MA MINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 70mA
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 6 V
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 3 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6 V
Produkt ist nicht verfügbar
| MA3X028WAL |
|
Hersteller: Panasonic Electronic Components
Description: DIODE GEN PURP 6V 100MA MINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 6 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6 V
Description: DIODE GEN PURP 6V 100MA MINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 6 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6 V
Produkt ist nicht verfügbar
| MA3X10000L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE GEN PURP 200V 100MA SMINI3
Description: DIODE GEN PURP 200V 100MA SMINI3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| MA3X78900L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE SCHOTTKY 60V 500MA MINI3
Description: DIODE SCHOTTKY 60V 500MA MINI3
Produkt ist nicht verfügbar
| MA4S11100L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 80V SSMINI4
Description: DIODE ARRAY SCHOTTKY 80V SSMINI4
Produkt ist nicht verfügbar
| MA4X16000L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY GP 40V 100MA MINI4
Description: DIODE ARRAY GP 40V 100MA MINI4
Produkt ist nicht verfügbar
| MA4X160A0L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA MINI4
Description: DIODE ARRAY GP 80V 100MA MINI4
Produkt ist nicht verfügbar
| MA4X19400L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 40V MINI4
Description: DIODE ARRAY SCHOTTKY 40V MINI4
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.44 EUR |
| MA5J002E0L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA SMINI5
Description: DIODE ARRAY GP 80V 100MA SMINI5
Produkt ist nicht verfügbar
| MA6X12200L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA MINI6
Description: DIODE ARRAY GP 80V 100MA MINI6
Produkt ist nicht verfügbar
| MA6X12300L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA MINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: Mini6-G2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Description: DIODE ARRAY GP 80V 100MA MINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: Mini6-G2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Produkt ist nicht verfügbar
| MA6X12600L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA MINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: MINI6-G1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Description: DIODE ARRAY GP 80V 100MA MINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: MINI6-G1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Produkt ist nicht verfügbar
| MA6X12900L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY GP 200V 200MA MINI6
Description: DIODE ARRAY GP 200V 200MA MINI6
Produkt ist nicht verfügbar
| MA6Z12100L |
|
Hersteller: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA SMINI6
Description: DIODE ARRAY GP 80V 100MA SMINI6
Produkt ist nicht verfügbar
| MALM062H0L |
|
Hersteller: Panasonic Electronic Components
Description: TVS DIODE 4V SSMINI5-F1
Description: TVS DIODE 4V SSMINI5-F1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.29 EUR |
| MALS06200L |
|
Hersteller: Panasonic Electronic Components
Description: TVS DIODE 4VWM SSMINI2
Description: TVS DIODE 4VWM SSMINI2
Produkt ist nicht verfügbar
| MALS06800L |
|
Hersteller: Panasonic Electronic Components
Description: TVS DIODE 4VWM SSMINI2
Description: TVS DIODE 4VWM SSMINI2
Produkt ist nicht verfügbar
| MALT062H0L |
|
Hersteller: Panasonic Electronic Components
Description: TVS DIODE 4VWM SSMINI3-F2
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SSMini3-F2
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 4VWM SSMINI3-F2
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SSMini3-F2
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
| MTM231100L |
|
Hersteller: Panasonic Electronic Components
Description: MOSFET P-CH 12V 4A SMINI-3
Description: MOSFET P-CH 12V 4A SMINI-3
Produkt ist nicht verfügbar
| MTM231230L |
|
Hersteller: Panasonic Electronic Components
Description: MOSFET P-CH 20V 3A SMINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 20V 3A SMINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
| MTM232230L |
|
Hersteller: Panasonic Electronic Components
Description: MOSFET N-CH 20V 4.5A SMINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Description: MOSFET N-CH 20V 4.5A SMINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Produkt ist nicht verfügbar
| NP0450100A |
Hersteller: Panasonic Electronic Components
Description: TRANS 2NPN 50V 0.1A SSSMINI
Description: TRANS 2NPN 50V 0.1A SSSMINI
Produkt ist nicht verfügbar
| NP062AN00A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS 2NPN PREBIAS SSSMINI6
Description: TRANS 2NPN PREBIAS SSSMINI6
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| NP063D300A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS NPN/PNP SSSMINI6
Description: TRANS PREBIAS NPN/PNP SSSMINI6
Produkt ist nicht verfügbar
| NP0A54700A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS 2NPN 7V 0.01A SSSMINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 7V
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 1V / 80 @ 1mA, 1V
Frequency - Transition: 4GHz
Supplier Device Package: SSSMini6-F1
Description: TRANS 2NPN 7V 0.01A SSSMINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 7V
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 1V / 80 @ 1mA, 1V
Frequency - Transition: 4GHz
Supplier Device Package: SSSMini6-F1
Produkt ist nicht verfügbar
| NP0G3A000A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS NPN/PNP SSSMINI6
Description: TRANS PREBIAS NPN/PNP SSSMINI6
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| NP0G3D300A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS NPN/PNP SSSMINI6
Description: TRANS PREBIAS NPN/PNP SSSMINI6
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| UNR32A700L |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 100MW SSSMINI3
Description: TRANS PREBIAS NPN 100MW SSSMINI3
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| UNR411100A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
| UNR411400A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
| UNR41160RA |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
| UNR411800A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 510 Ohms
Resistor - Emitter Base (R2): 5.1 kOhms
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 510 Ohms
Resistor - Emitter Base (R2): 5.1 kOhms
Produkt ist nicht verfügbar
| UNR411900A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
| UNR411E00A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
| UNR411H00A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
| UNR412100A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
| UNR412200A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
| UNR412300A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
| UNR42100RA |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: NS-B1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: NS-B1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Produkt ist nicht verfügbar
| UNR421100A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
Description: TRANS PREBIAS NPN 300MW NS-B1
Produkt ist nicht verfügbar
| UNR421200A |
|
Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
Description: TRANS PREBIAS NPN 300MW NS-B1
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)