Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SZMM3Z12VT1G | onsemi |
Description: DIODE ZENER 12V 300MW SOD323 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
auf Bestellung 243000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSTB60BDW1T1 | onsemi | Description: TRANS NPN PREBIAS/PNP SOT363 |
Produkt ist nicht verfügbar |
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SN74LS10D | onsemi |
Description: IC GATE NAND 3CH 3-INP 14SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Output High, Low: 400µA, 8mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 15ns @ 5V, 15pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 1.2 mA |
auf Bestellung 86546 Stücke: Lieferzeit 10-14 Tag (e) |
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MCH3221-TL-E | onsemi |
Description: BIP NPN 3A 30V Packaging: Bulk |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP150A | onsemi |
Description: MOSFET N-CH 100V 43A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 21.5A, 10V Power Dissipation (Max): 193W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V |
Produkt ist nicht verfügbar |
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MMSZS5260BT1G | onsemi | Description: DIODE ZENER 500MW SOD123 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMA5934BT3G | onsemi |
Description: DIODE ZENER 24V 1.5W SMA Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: SMA Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMA5934BT3G | onsemi |
Description: DIODE ZENER 24V 1.5W SMA Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: SMA Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V |
auf Bestellung 30120 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD15N06LG | onsemi |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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NTD15N06AV1 | onsemi |
Description: 15A, 60V, 0.09OHM, N-CHANNEL POW Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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FDMC15N06 | onsemi | Description: MOSFET N-CH 55V 2.4A/15A 8MLP |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD15N06LT4 | onsemi | Description: MOSFET N-CH 60V 15A DPAK |
Produkt ist nicht verfügbar |
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2N6107 | onsemi |
Description: TRANS PNP 70V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V Frequency - Transition: 10MHz Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
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TIP29B | onsemi |
Description: TRANS NPN 80V 1A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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NVMFS5A160PLZT1G | onsemi |
Description: MOSFET P-CH 60V 15A/100A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V |
Produkt ist nicht verfügbar |
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NVMFS5A160PLZT1G | onsemi |
Description: MOSFET P-CH 60V 15A/100A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V |
Produkt ist nicht verfügbar |
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LE25S40AFDTWG | onsemi |
Description: IC FLASH 4MBIT SPI 40MHZ 8VSOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 90°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH Clock Frequency: 40 MHz Memory Format: FLASH Supplier Device Package: 8-VSOIC Write Cycle Time - Word, Page: 1ms Memory Interface: SPI Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SJ403 | onsemi |
Description: P-CHANNEL POWER MOSFET Packaging: Bulk |
auf Bestellung 11070 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF2290BUCX-F130 | onsemi | Description: IC PWR SWITCH N-CHAN 1:1 12WLCSP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF2290BUCX-F130 | onsemi | Description: IC PWR SWITCH N-CHAN 1:1 12WLCSP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NC7WZ07P6X-L22347 | onsemi |
Description: IC BUFFER NON-INVERT 5.5V SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: SC-70-6 |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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NC7WZ07FHX-L22175 | onsemi |
Description: IC BUFFER NON-INVERT 5.5V 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 6-UDFN (1x1) |
Produkt ist nicht verfügbar |
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NC7WZ07L6X-L22175 | onsemi |
Description: IC BUF NON-INVERT 5.5V 6MICROPAK Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 6-MicroPak |
Produkt ist nicht verfügbar |
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LB11861MC-W-AH | onsemi |
Description: IC FAN MOTOR DRIVER 10MFPSK Packaging: Bulk Package / Case: 10-LSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.2A Operating Temperature: -30°C ~ 90°C Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 16V Applications: Fan Motor Driver Technology: Bipolar Voltage - Load: 4.5V ~ 16V Supplier Device Package: 10-MFPSK Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Obsolete |
auf Bestellung 28000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCX18LT1 | onsemi | Description: TRANS PNP 25V 0.5A SOT23-3 |
Produkt ist nicht verfügbar |
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BCX18LT1G | onsemi |
Description: TRANS PNP 25V 0.5A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 300 mW |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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NL3S22UHMUTAG | onsemi |
Description: USB 2.0 + AUDIO SWITCH Packaging: Tape & Reel (TR) Features: USB 2.0 Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio, USB On-State Resistance (Max): 5.4Ohm -3db Bandwidth: 811MHz Supplier Device Package: 10-UQFN (1.4x1.8) Voltage - Supply, Single (V+): 2.7V ~ 3.6V Switch Circuit: DPDT Part Status: Active Number of Channels: 2 |
Produkt ist nicht verfügbar |
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NL3S22UHMUTAG | onsemi |
Description: USB 2.0 + AUDIO SWITCH Packaging: Cut Tape (CT) Features: USB 2.0 Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio, USB On-State Resistance (Max): 5.4Ohm -3db Bandwidth: 811MHz Supplier Device Package: 10-UQFN (1.4x1.8) Voltage - Supply, Single (V+): 2.7V ~ 3.6V Switch Circuit: DPDT Part Status: Active Number of Channels: 2 |
Produkt ist nicht verfügbar |
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NCV57252DWR2G | onsemi |
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Pulse Width Distortion (Max): 10ns Part Status: Active Number of Channels: 2 Voltage - Output Supply: 32V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV57252DWR2G | onsemi |
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Pulse Width Distortion (Max): 10ns Part Status: Active Number of Channels: 2 Voltage - Output Supply: 32V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4829 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV57253DWR2G | onsemi |
Description: ISOLATED DUAL CHANNEL MOSFET GAT Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A, 3.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Pulse Width Distortion (Max): 20ns Part Status: Active Number of Channels: 2 Voltage - Output Supply: 0V ~ 32V |
auf Bestellung 962 Stücke: Lieferzeit 10-14 Tag (e) |
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NCD57253DWR2G | onsemi |
Description: ISOLATED DUAL CHANNEL MOSFET GAT Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A, 3.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Pulse Width Distortion (Max): 20ns Number of Channels: 2 Voltage - Output Supply: 0V ~ 32V |
Produkt ist nicht verfügbar |
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SMDA15CDR2G | onsemi |
Description: TVS DIODE 15V 30V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 75pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: 8-SOIC Bidirectional Channels: 4 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 30V Power - Peak Pulse: 300W Power Line Protection: No |
Produkt ist nicht verfügbar |
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SMDA15CDR2G | onsemi |
Description: TVS DIODE 15V 30V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 75pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: 8-SOIC Bidirectional Channels: 4 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 30V Power - Peak Pulse: 300W Power Line Protection: No |
auf Bestellung 1241 Stücke: Lieferzeit 10-14 Tag (e) |
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SMDA12CDR2G | onsemi |
Description: ESD / SURGE PROTECTOR 4 CHANNEL Packaging: Bulk |
auf Bestellung 23371 Stücke: Lieferzeit 10-14 Tag (e) |
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SMDA24CDR2G | onsemi |
Description: TVS DIODE 24VWM 55VC 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 50pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: 8-SOIC Bidirectional Channels: 4 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 55V Power - Peak Pulse: 300W Power Line Protection: No |
Produkt ist nicht verfügbar |
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SMDA24CDR2G | onsemi |
Description: TVS DIODE 24VWM 55VC 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 50pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: 8-SOIC Bidirectional Channels: 4 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 55V Power - Peak Pulse: 300W Power Line Protection: No |
Produkt ist nicht verfügbar |
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BC857BLT1 | onsemi | Description: TRANS PNP 45V 100MA SOT23 |
Produkt ist nicht verfügbar |
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SBC857BDW1T1G-M02 | onsemi |
Description: SBC857BDW1T1G-M02 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NCS2002SN1T1 | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Current - Supply: 820µA Slew Rate: 1.3V/µs Gain Bandwidth Product: 900 kHz Current - Input Bias: 10 pA Voltage - Input Offset: 500 µV Supplier Device Package: 6-TSOP Part Status: Obsolete Number of Circuits: 1 Current - Output / Channel: 128 mA Voltage - Supply Span (Min): 0.9 V Voltage - Supply Span (Max): 7 V |
Produkt ist nicht verfügbar |
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NCS2002SN1T1 | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Current - Supply: 820µA Slew Rate: 1.3V/µs Gain Bandwidth Product: 900 kHz Current - Input Bias: 10 pA Voltage - Input Offset: 500 µV Supplier Device Package: 6-TSOP Part Status: Obsolete Number of Circuits: 1 Current - Output / Channel: 128 mA Voltage - Supply Span (Min): 0.9 V Voltage - Supply Span (Max): 7 V |
Produkt ist nicht verfügbar |
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NCS2002SN2T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Current - Supply: 820µA Slew Rate: 1.3V/µs Gain Bandwidth Product: 900 kHz Current - Input Bias: 10 pA Voltage - Input Offset: 500 µV Supplier Device Package: 6-TSOP Part Status: Obsolete Number of Circuits: 1 Current - Output / Channel: 128 mA Voltage - Supply Span (Min): 0.9 V Voltage - Supply Span (Max): 7 V |
Produkt ist nicht verfügbar |
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NCS2002SN2T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Current - Supply: 820µA Slew Rate: 1.3V/µs Gain Bandwidth Product: 900 kHz Current - Input Bias: 10 pA Voltage - Input Offset: 500 µV Supplier Device Package: 6-TSOP Part Status: Obsolete Number of Circuits: 1 Current - Output / Channel: 128 mA Voltage - Supply Span (Min): 0.9 V Voltage - Supply Span (Max): 7 V |
auf Bestellung 353 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-G | onsemi |
Description: FET 50V 3.5 OHM SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V |
Produkt ist nicht verfügbar |
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BSS138-G | onsemi |
Description: FET 50V 3.5 OHM SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V |
auf Bestellung 1680 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100EP14DTR2G | onsemi | Description: IC CLK BUFFER 2:5 2GHZ 20TSSOP |
Produkt ist nicht verfügbar |
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MC100EP14DTR2G | onsemi | Description: IC CLK BUFFER 2:5 2GHZ 20TSSOP |
Produkt ist nicht verfügbar |
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MC100EP14DTR2G | onsemi | Description: IC CLK BUFFER 2:5 2GHZ 20TSSOP |
auf Bestellung 5809 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC008N08C | onsemi |
Description: MOSFET N-CHANNEL 80V 60A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 40 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC008N08C | onsemi |
Description: MOSFET N-CHANNEL 80V 60A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 40 V |
auf Bestellung 25009 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS6D1N08HT1G | onsemi |
Description: MOSFET N-CH 80V 17A/89A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V |
Produkt ist nicht verfügbar |
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NTMFS6D1N08HT1G | onsemi |
Description: MOSFET N-CH 80V 17A/89A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V |
auf Bestellung 1430 Stücke: Lieferzeit 10-14 Tag (e) |
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FGA30T65SHD | onsemi |
Description: IGBT TRENCH/FS 650V 60A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31.8 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14.4ns/52.8ns Switching Energy: 598µJ (on), 167µJ (off) Test Condition: 400V, 30A, 6Ohm, 15V Gate Charge: 54.7 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 238 W |
Produkt ist nicht verfügbar |
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LA733P | onsemi |
Description: RF SMALL SIGNAL BIPOLAR TRANSIST Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 625mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 48V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 450MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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NCV86602BD50R2G | onsemi |
Description: IC REG LINEAR 5V 150MA 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 30 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive Part Status: Obsolete PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 40 µA Qualification: AEC-Q100 |
auf Bestellung 584 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD1L001W1T2G | onsemi | Description: TVS DIODE 5VWM 30VC SC70-6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD1L001W1T2G | onsemi | Description: TVS DIODE 5VWM 30VC SC70-6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD7951ST5G | onsemi | Description: TVS DIODE 5VWM 12.9VC SOD923 |
auf Bestellung 279110 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD7205WTT1G | onsemi |
Description: TVS DIODE 5VWM 12.5VC SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 0.47pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SC-70-3 (SOT323) Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 12.5V (Typ) Power Line Protection: No |
Produkt ist nicht verfügbar |
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ESD7205WTT1G | onsemi |
Description: TVS DIODE 5VWM 12.5VC SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 0.47pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SC-70-3 (SOT323) Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 12.5V (Typ) Power Line Protection: No |
auf Bestellung 5328 Stücke: Lieferzeit 10-14 Tag (e) |
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SZMM3Z12VT1G |
Hersteller: onsemi
Description: DIODE ZENER 12V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 243000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
9000+ | 0.1 EUR |
30000+ | 0.099 EUR |
75000+ | 0.082 EUR |
150000+ | 0.081 EUR |
NSTB60BDW1T1 |
Hersteller: onsemi
Description: TRANS NPN PREBIAS/PNP SOT363
Description: TRANS NPN PREBIAS/PNP SOT363
Produkt ist nicht verfügbar
SN74LS10D |
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 15pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 1.2 mA
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 15pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 1.2 mA
auf Bestellung 86546 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
729+ | 0.67 EUR |
MCH3221-TL-E |
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2049+ | 0.24 EUR |
IRFP150A |
Hersteller: onsemi
Description: MOSFET N-CH 100V 43A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21.5A, 10V
Power Dissipation (Max): 193W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
Description: MOSFET N-CH 100V 43A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21.5A, 10V
Power Dissipation (Max): 193W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
Produkt ist nicht verfügbar
MMSZS5260BT1G |
Hersteller: onsemi
Description: DIODE ZENER 500MW SOD123
Description: DIODE ZENER 500MW SOD123
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15000+ | 0.034 EUR |
1SMA5934BT3G |
Hersteller: onsemi
Description: DIODE ZENER 24V 1.5W SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Description: DIODE ZENER 24V 1.5W SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.16 EUR |
10000+ | 0.14 EUR |
1SMA5934BT3G |
Hersteller: onsemi
Description: DIODE ZENER 24V 1.5W SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Description: DIODE ZENER 24V 1.5W SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
auf Bestellung 30120 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
38+ | 0.47 EUR |
100+ | 0.28 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
2000+ | 0.16 EUR |
NTD15N06LG |
Produkt ist nicht verfügbar
NTD15N06AV1 |
Produkt ist nicht verfügbar
FDMC15N06 |
Hersteller: onsemi
Description: MOSFET N-CH 55V 2.4A/15A 8MLP
Description: MOSFET N-CH 55V 2.4A/15A 8MLP
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
394+ | 1.26 EUR |
2N6107 |
Hersteller: onsemi
Description: TRANS PNP 70V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 40 W
Description: TRANS PNP 70V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 40 W
Produkt ist nicht verfügbar
TIP29B |
Hersteller: onsemi
Description: TRANS NPN 80V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
NVMFS5A160PLZT1G |
Hersteller: onsemi
Description: MOSFET P-CH 60V 15A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Description: MOSFET P-CH 60V 15A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Produkt ist nicht verfügbar
NVMFS5A160PLZT1G |
Hersteller: onsemi
Description: MOSFET P-CH 60V 15A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Description: MOSFET P-CH 60V 15A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Produkt ist nicht verfügbar
LE25S40AFDTWG |
Hersteller: onsemi
Description: IC FLASH 4MBIT SPI 40MHZ 8VSOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-VSOIC
Write Cycle Time - Word, Page: 1ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT SPI 40MHZ 8VSOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-VSOIC
Write Cycle Time - Word, Page: 1ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
688+ | 0.72 EUR |
2SJ403 |
auf Bestellung 11070 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
468+ | 1.05 EUR |
FPF2290BUCX-F130 |
Hersteller: onsemi
Description: IC PWR SWITCH N-CHAN 1:1 12WLCSP
Description: IC PWR SWITCH N-CHAN 1:1 12WLCSP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.81 EUR |
FPF2290BUCX-F130 |
Hersteller: onsemi
Description: IC PWR SWITCH N-CHAN 1:1 12WLCSP
Description: IC PWR SWITCH N-CHAN 1:1 12WLCSP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.9 EUR |
11+ | 1.7 EUR |
25+ | 1.61 EUR |
100+ | 1.32 EUR |
250+ | 1.24 EUR |
500+ | 1.09 EUR |
1000+ | 0.86 EUR |
NC7WZ07P6X-L22347 |
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: SC-70-6
Description: IC BUFFER NON-INVERT 5.5V SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: SC-70-6
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
32+ | 0.55 EUR |
36+ | 0.5 EUR |
100+ | 0.27 EUR |
250+ | 0.26 EUR |
NC7WZ07FHX-L22175 |
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-UDFN (1x1)
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-UDFN (1x1)
Produkt ist nicht verfügbar
NC7WZ07L6X-L22175 |
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-MicroPak
Description: IC BUF NON-INVERT 5.5V 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-MicroPak
Produkt ist nicht verfügbar
LB11861MC-W-AH |
Hersteller: onsemi
Description: IC FAN MOTOR DRIVER 10MFPSK
Packaging: Bulk
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Operating Temperature: -30°C ~ 90°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 16V
Applications: Fan Motor Driver
Technology: Bipolar
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 10-MFPSK
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
Description: IC FAN MOTOR DRIVER 10MFPSK
Packaging: Bulk
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Operating Temperature: -30°C ~ 90°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 16V
Applications: Fan Motor Driver
Technology: Bipolar
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 10-MFPSK
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
437+ | 1.12 EUR |
BCX18LT1G |
Hersteller: onsemi
Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11539+ | 0.049 EUR |
NL3S22UHMUTAG |
Hersteller: onsemi
Description: USB 2.0 + AUDIO SWITCH
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB
On-State Resistance (Max): 5.4Ohm
-3db Bandwidth: 811MHz
Supplier Device Package: 10-UQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 3.6V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 2
Description: USB 2.0 + AUDIO SWITCH
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB
On-State Resistance (Max): 5.4Ohm
-3db Bandwidth: 811MHz
Supplier Device Package: 10-UQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 3.6V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 2
Produkt ist nicht verfügbar
NL3S22UHMUTAG |
Hersteller: onsemi
Description: USB 2.0 + AUDIO SWITCH
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB
On-State Resistance (Max): 5.4Ohm
-3db Bandwidth: 811MHz
Supplier Device Package: 10-UQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 3.6V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 2
Description: USB 2.0 + AUDIO SWITCH
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB
On-State Resistance (Max): 5.4Ohm
-3db Bandwidth: 811MHz
Supplier Device Package: 10-UQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 3.6V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 2
Produkt ist nicht verfügbar
NCV57252DWR2G |
Hersteller: onsemi
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Grade: Automotive
Qualification: AEC-Q100
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.55 EUR |
2000+ | 2.46 EUR |
NCV57252DWR2G |
Hersteller: onsemi
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Grade: Automotive
Qualification: AEC-Q100
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4829 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.09 EUR |
10+ | 4.57 EUR |
25+ | 4.32 EUR |
100+ | 3.55 EUR |
250+ | 3.18 EUR |
500+ | 3.07 EUR |
NCV57253DWR2G |
Hersteller: onsemi
Description: ISOLATED DUAL CHANNEL MOSFET GAT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A, 3.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 20ns
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 0V ~ 32V
Description: ISOLATED DUAL CHANNEL MOSFET GAT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A, 3.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 20ns
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 0V ~ 32V
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.95 EUR |
10+ | 10.8 EUR |
25+ | 10.3 EUR |
100+ | 8.54 EUR |
250+ | 7.78 EUR |
500+ | 7.28 EUR |
NCD57253DWR2G |
Hersteller: onsemi
Description: ISOLATED DUAL CHANNEL MOSFET GAT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A, 3.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 0V ~ 32V
Description: ISOLATED DUAL CHANNEL MOSFET GAT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A, 3.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 0V ~ 32V
Produkt ist nicht verfügbar
SMDA15CDR2G |
Hersteller: onsemi
Description: TVS DIODE 15V 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 15V 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 300W
Power Line Protection: No
Produkt ist nicht verfügbar
SMDA15CDR2G |
Hersteller: onsemi
Description: TVS DIODE 15V 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 15V 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 1241 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.21 EUR |
10+ | 3.48 EUR |
100+ | 2.77 EUR |
500+ | 2.35 EUR |
1000+ | 1.99 EUR |
SMDA12CDR2G |
auf Bestellung 23371 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
247+ | 1.98 EUR |
SMDA24CDR2G |
Hersteller: onsemi
Description: TVS DIODE 24VWM 55VC 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 55V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 24VWM 55VC 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 55V
Power - Peak Pulse: 300W
Power Line Protection: No
Produkt ist nicht verfügbar
SMDA24CDR2G |
Hersteller: onsemi
Description: TVS DIODE 24VWM 55VC 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 55V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 24VWM 55VC 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 55V
Power - Peak Pulse: 300W
Power Line Protection: No
Produkt ist nicht verfügbar
SBC857BDW1T1G-M02 |
Hersteller: onsemi
Description: SBC857BDW1T1G-M02
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Description: SBC857BDW1T1G-M02
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NCS2002SN1T1 |
Hersteller: onsemi
Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Produkt ist nicht verfügbar
NCS2002SN1T1 |
Hersteller: onsemi
Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Produkt ist nicht verfügbar
NCS2002SN2T1G |
Hersteller: onsemi
Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Produkt ist nicht verfügbar
NCS2002SN2T1G |
Hersteller: onsemi
Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.76 EUR |
12+ | 1.57 EUR |
25+ | 1.49 EUR |
100+ | 1.15 EUR |
250+ | 1.01 EUR |
BSS138-G |
Hersteller: onsemi
Description: FET 50V 3.5 OHM SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
Description: FET 50V 3.5 OHM SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
Produkt ist nicht verfügbar
BSS138-G |
Hersteller: onsemi
Description: FET 50V 3.5 OHM SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
Description: FET 50V 3.5 OHM SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
37+ | 0.48 EUR |
100+ | 0.31 EUR |
500+ | 0.23 EUR |
1000+ | 0.2 EUR |
MC100EP14DTR2G |
Hersteller: onsemi
Description: IC CLK BUFFER 2:5 2GHZ 20TSSOP
Description: IC CLK BUFFER 2:5 2GHZ 20TSSOP
Produkt ist nicht verfügbar
MC100EP14DTR2G |
Hersteller: onsemi
Description: IC CLK BUFFER 2:5 2GHZ 20TSSOP
Description: IC CLK BUFFER 2:5 2GHZ 20TSSOP
Produkt ist nicht verfügbar
MC100EP14DTR2G |
Hersteller: onsemi
Description: IC CLK BUFFER 2:5 2GHZ 20TSSOP
Description: IC CLK BUFFER 2:5 2GHZ 20TSSOP
auf Bestellung 5809 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 12.66 EUR |
FDMC008N08C |
Hersteller: onsemi
Description: MOSFET N-CHANNEL 80V 60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 40 V
Description: MOSFET N-CHANNEL 80V 60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 40 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.38 EUR |
6000+ | 1.33 EUR |
9000+ | 1.28 EUR |
FDMC008N08C |
Hersteller: onsemi
Description: MOSFET N-CHANNEL 80V 60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 40 V
Description: MOSFET N-CHANNEL 80V 60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 40 V
auf Bestellung 25009 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.06 EUR |
10+ | 2.54 EUR |
100+ | 2.02 EUR |
500+ | 1.71 EUR |
1000+ | 1.45 EUR |
NTMFS6D1N08HT1G |
Hersteller: onsemi
Description: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Description: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Produkt ist nicht verfügbar
NTMFS6D1N08HT1G |
Hersteller: onsemi
Description: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Description: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
auf Bestellung 1430 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.52 EUR |
10+ | 2.06 EUR |
100+ | 1.61 EUR |
500+ | 1.36 EUR |
FGA30T65SHD |
Hersteller: onsemi
Description: IGBT TRENCH/FS 650V 60A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14.4ns/52.8ns
Switching Energy: 598µJ (on), 167µJ (off)
Test Condition: 400V, 30A, 6Ohm, 15V
Gate Charge: 54.7 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 238 W
Description: IGBT TRENCH/FS 650V 60A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14.4ns/52.8ns
Switching Energy: 598µJ (on), 167µJ (off)
Test Condition: 400V, 30A, 6Ohm, 15V
Gate Charge: 54.7 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 238 W
Produkt ist nicht verfügbar
LA733P |
Hersteller: onsemi
Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 48V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 450MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 48V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 450MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Produkt ist nicht verfügbar
NCV86602BD50R2G |
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 150MA 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
auf Bestellung 584 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
300+ | 1.62 EUR |
ESD1L001W1T2G |
Hersteller: onsemi
Description: TVS DIODE 5VWM 30VC SC70-6
Description: TVS DIODE 5VWM 30VC SC70-6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.44 EUR |
ESD1L001W1T2G |
Hersteller: onsemi
Description: TVS DIODE 5VWM 30VC SC70-6
Description: TVS DIODE 5VWM 30VC SC70-6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.14 EUR |
18+ | 1.01 EUR |
100+ | 0.77 EUR |
500+ | 0.61 EUR |
1000+ | 0.49 EUR |
ESD7951ST5G |
Hersteller: onsemi
Description: TVS DIODE 5VWM 12.9VC SOD923
Description: TVS DIODE 5VWM 12.9VC SOD923
auf Bestellung 279110 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
37+ | 0.48 EUR |
100+ | 0.3 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
ESD7205WTT1G |
Hersteller: onsemi
Description: TVS DIODE 5VWM 12.5VC SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.47pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-70-3 (SOT323)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 12.5V (Typ)
Power Line Protection: No
Description: TVS DIODE 5VWM 12.5VC SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.47pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-70-3 (SOT323)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 12.5V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
ESD7205WTT1G |
Hersteller: onsemi
Description: TVS DIODE 5VWM 12.5VC SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.47pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-70-3 (SOT323)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 12.5V (Typ)
Power Line Protection: No
Description: TVS DIODE 5VWM 12.5VC SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.47pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-70-3 (SOT323)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 12.5V (Typ)
Power Line Protection: No
auf Bestellung 5328 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.82 EUR |
100+ | 0.57 EUR |
500+ | 0.44 EUR |
1000+ | 0.36 EUR |