Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FGB3245G2-F085C | onsemi |
Description: IGNITION IGBT, 450V, 23A, 1.3V, Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Reverse Recovery Time (trr): 2.6 µs Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 900ns/5.4µs Test Condition: 300V, 6.5A, 1kOhm, 5V Gate Charge: 23 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 150 W |
auf Bestellung 48200 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD4904NT4G | onsemi | Description: MOSFET N-CH 30V 13A/79A DPAK |
auf Bestellung 33167 Stücke: Lieferzeit 10-14 Tag (e) |
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TF009E-AC | onsemi |
Description: RF MOSFET JFET Packaging: Bulk Part Status: Active |
auf Bestellung 222500 Stücke: Lieferzeit 10-14 Tag (e) |
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TF009F-AC | onsemi |
Description: RF MOSFET JFET Packaging: Bulk Part Status: Active |
auf Bestellung 320000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK937Y5-AA | onsemi |
Description: NCH J-FET Packaging: Bulk |
auf Bestellung 38000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS012N10MDTAG | onsemi |
Description: PTNG 100V LOW Q 12MOHM N-FET, U8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 78µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V |
auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS012N10MDTAG | onsemi |
Description: PTNG 100V LOW Q 12MOHM N-FET, U8 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 78µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V |
auf Bestellung 16885 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS6H860NTAG | onsemi | Description: TRENCH 8 80V NFET |
Produkt ist nicht verfügbar |
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NTTFS4840NTAG | onsemi |
Description: MOSFET N-CH 30V 4.6A/26A 8WDFN Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 27.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V |
auf Bestellung 4300 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4928NTWG | onsemi |
Description: MOSFET N-CH 30V 7.3A/37A 8WDFN Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 810mW (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 15 V |
auf Bestellung 453600 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4932NTAG | onsemi |
Description: MOSFET N-CH 30V 11A/79A 8WDFN Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 850mW (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V |
auf Bestellung 73565 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4H05NTWG | onsemi | Description: MOSFET N-CH 25V 22.4A/94A 8WDFN |
auf Bestellung 218180 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4943NTAG | onsemi |
Description: MOSFET N-CH 30V 8A/41A 8WDFN Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 22.3W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V |
auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4941NTAG | onsemi |
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V |
auf Bestellung 16500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4823NTWG | onsemi |
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 660mW (Ta), 32.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V |
auf Bestellung 39942 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4929NTAG | onsemi | Description: MOSFET N-CH 30V 6.6A/34A 8WDFN |
auf Bestellung 135000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4929NTWG | onsemi | Description: MOSFET N-CH 30V 6.6A/34A 8WDFN |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4823NTAG | onsemi |
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 660mW (Ta), 32.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V |
auf Bestellung 367762 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4930NTWG | onsemi | Description: MOSFET N-CH 30V 4.5A/23A 8WDFN |
auf Bestellung 55000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4941NTWG | onsemi | Description: MOSFET N-CH 30V 8.3A/46A 8WDFN |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP7662P | onsemi | Description: IC REG LINEAR SWITCHED CAP REG |
auf Bestellung 58376 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP707CMX180TCG | onsemi | Description: LDO REGULATOR, 200 MA, ULTRA-LOW |
auf Bestellung 1446000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP786AMNADJTBG | onsemi | Description: IC REG LINEAR POS ADJ 11MA 6DFN |
Produkt ist nicht verfügbar |
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MC74AC32M | onsemi |
Description: OR GATE, AC SERIES Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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FUSB3317V6AMNWTWG | onsemi |
Description: AUTOMOTIVE USB PD3.0 WITH PROGRA Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 20-QFN (4x4) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FUSB3317V6AMNWTWG | onsemi |
Description: AUTOMOTIVE USB PD3.0 WITH PROGRA Packaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 20-QFN (4x4) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FUSB3307D90B0AFMNWTWG | onsemi |
Description: 90W USB TYPE-C PD SOURCE CONTROL Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Function: Adapter Interface: USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.75V ~ 5.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.0 Supplier Device Package: 20-QFN (4x4) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FUSB3307D90B0AFMNWTWG | onsemi |
Description: 90W USB TYPE-C PD SOURCE CONTROL Packaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Function: Adapter Interface: USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.75V ~ 5.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.0 Supplier Device Package: 20-QFN (4x4) DigiKey Programmable: Not Verified |
auf Bestellung 3995 Stücke: Lieferzeit 10-14 Tag (e) |
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FUSB3307D6A0BFMX | onsemi | Description: 60W WITH PD2.0 USB TYPE-C PD SOU |
Produkt ist nicht verfügbar |
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FUSB301ATM1X | onsemi | Description: IC USB-C PORT CONTROLLER |
Produkt ist nicht verfügbar |
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FUSB3307D45A0AFMX | onsemi |
Description: 45W USB TYPE-C PD SOURCE CONTROL Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Function: Adapter Interface: USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.75V ~ 5.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.0 Supplier Device Package: 14-SOIC DigiKey Programmable: Not Verified |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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FUSB3307D45A0AFMNWTWG | onsemi | Description: 45W USB TYPE-C PD SOURCE CONTROL |
Produkt ist nicht verfügbar |
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ARRAYX-BOB6-64P-GEVK | onsemi |
Description: C/J-ARRAY 6MM 8X8 BOB Packaging: Bulk Interface: Analog Sensor Type: Light, Silicon Photomultiplier (SiPM) Utilized IC / Part: ArrayC-60035-64P Supplied Contents: Board(s) |
Produkt ist nicht verfügbar |
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MICRORD-SMTPA-10010-GEVB | onsemi |
Description: RD-SERIES 1MM 10U SMTPA Packaging: Box Interface: Analog Sensor Type: Light, Silicon Photomultiplier (SiPM) Utilized IC / Part: MicroRD Supplied Contents: Board(s) Embedded: No |
Produkt ist nicht verfügbar |
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MICRORD-SMTPA-10020-GEVB | onsemi |
Description: RD-SERIES 1MM 20U SMTPA Packaging: Box Interface: Analog Sensor Type: Light, Silicon Photomultiplier (SiPM) Utilized IC / Part: MicroRD Supplied Contents: Board(s) Embedded: No |
Produkt ist nicht verfügbar |
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MICRORD-SMTPA-10035-GEVB | onsemi |
Description: RD-SERIES 1MM 35U SMTPA Packaging: Box Interface: Analog Sensor Type: Light, Silicon Photomultiplier (SiPM) Utilized IC / Part: MicroRD Supplied Contents: Board(s) Embedded: No |
Produkt ist nicht verfügbar |
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0339-671-TLM-E | onsemi | Description: ANALOG CAR RADIO TUNER |
auf Bestellung 83500 Stücke: Lieferzeit 10-14 Tag (e) |
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M74VHC1G135DFT1G | onsemi |
Description: IC GATE NAND 1CH 2-INP SC88A Packaging: Bulk Features: Schmitt Trigger, Open Drain Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: -, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 2.25V ~ 3.7V Input Logic Level - Low: 0.65V ~ 1.45V Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 8248 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1530DM27R2 | onsemi |
Description: IC REG BUCK 2.7V 600MA 8MSOP Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 600mA Operating Temperature: 0°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 600kHz Voltage - Input (Max): 5V Topology: Buck Supplier Device Package: 8-MSOP Synchronous Rectifier: No Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 2.7V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1530DM27R2G | onsemi |
Description: IC REG BUCK 2.7V 600MA 8MSOP Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 600mA Operating Temperature: 0°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 600kHz Voltage - Input (Max): 5V Topology: Buck Supplier Device Package: 8-MSOP Synchronous Rectifier: No Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 2.7V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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STTFS010N10MCL | onsemi |
Description: PTNG 100V LL Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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STTFS010N10MCL | onsemi |
Description: PTNG 100V LL Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0239SRSC00SUEA0-DPBR | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 63-LBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1936H x 1188V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 90 |
Produkt ist nicht verfügbar |
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AR0239SRSC00SUEA0-DP | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 63-LBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1936H x 1188V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 90 |
Produkt ist nicht verfügbar |
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AR0239SRSC00SUEA0-DRBR | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 63-LBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1936H x 1188V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 90 |
Produkt ist nicht verfügbar |
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SMMBD2837LT1G | onsemi |
Description: DIODE ARRAY GP 30V 150MA SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
auf Bestellung 258000 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMB60CAT3G | onsemi |
Description: TVS DIODE 60VWM 96.8VC SMB Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 60V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 96.8V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVH4L015N065SC1 | onsemi |
Description: SIC MOS TO247-4L 650V Packaging: Tray Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 142A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 25mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 420 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG015N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650V Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 25mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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ISL9V3040P3-F085C | onsemi |
Description: IGBT 430V 21A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: -/4.8µs Gate Charge: 17 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 150 W |
auf Bestellung 1648 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS0D55N03CGT1G | onsemi |
Description: WIDE SOA Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 30A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 330µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 224.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 15 V |
Produkt ist nicht verfügbar |
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1PMT5933BT1G | onsemi | Description: DIODE ZENER 22V 3.2W POWERMITE |
Produkt ist nicht verfügbar |
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1PMT5933BT1G | onsemi | Description: DIODE ZENER 22V 3.2W POWERMITE |
auf Bestellung 3495 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF6730 | onsemi | Description: IC DRIVER FET MULTICHIP 40-MLP |
Produkt ist nicht verfügbar |
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FQA7N80C-F109 | onsemi |
Description: POWER MOSFET, N-CHANNEL, QFET, 8 Packaging: Bulk Part Status: Active |
auf Bestellung 18190 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD3040G2-F085C | onsemi |
Description: IGBT 400V 41A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 0.9µs/4.8µs Test Condition: 300V, 6.5A, 1000Ohm, 5V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FGD3040G2-F085C | onsemi |
Description: IGBT 400V 41A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 0.9µs/4.8µs Test Condition: 300V, 6.5A, 1000Ohm, 5V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2395 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR60L45WTG | onsemi | Description: RECTIFIER DIODE, SCHOTTKY, 1 PHA |
Produkt ist nicht verfügbar |
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LC74782M-9011-E | onsemi |
Description: LCD DRVR BRD ON SCREEN DISP CTL Packaging: Bulk Part Status: Active |
auf Bestellung 14448 Stücke: Lieferzeit 10-14 Tag (e) |
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M74LCX16374DTR | onsemi |
Description: IC D-TYPE POS TRG DUAL 14TSSOP Packaging: Bulk Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 2 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 170 MHz Supplier Device Package: 48-TSSOP Max Propagation Delay @ V, Max CL: 6.2ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 8 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB3245G2-F085C |
Hersteller: onsemi
Description: IGNITION IGBT, 450V, 23A, 1.3V,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Description: IGNITION IGBT, 450V, 23A, 1.3V,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
auf Bestellung 48200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
115+ | 7.66 EUR |
NTD4904NT4G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/79A DPAK
Description: MOSFET N-CH 30V 13A/79A DPAK
auf Bestellung 33167 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
849+ | 0.57 EUR |
TF009E-AC |
auf Bestellung 222500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
360+ | 1.37 EUR |
TF009F-AC |
auf Bestellung 320000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3806+ | 0.13 EUR |
2SK937Y5-AA |
auf Bestellung 38000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1158+ | 0.46 EUR |
NTTFS012N10MDTAG |
Hersteller: onsemi
Description: PTNG 100V LOW Q 12MOHM N-FET, U8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 78µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
Description: PTNG 100V LOW Q 12MOHM N-FET, U8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 78µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 1.15 EUR |
3000+ | 1.09 EUR |
7500+ | 1.03 EUR |
10500+ | 0.99 EUR |
NTTFS012N10MDTAG |
Hersteller: onsemi
Description: PTNG 100V LOW Q 12MOHM N-FET, U8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 78µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
Description: PTNG 100V LOW Q 12MOHM N-FET, U8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 78µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
auf Bestellung 16885 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.64 EUR |
10+ | 2.15 EUR |
100+ | 1.67 EUR |
500+ | 1.42 EUR |
NTTFS4840NTAG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 4.6A/26A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Description: MOSFET N-CH 30V 4.6A/26A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
auf Bestellung 4300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
592+ | 0.84 EUR |
NTTFS4928NTWG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 7.3A/37A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 810mW (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 15 V
Description: MOSFET N-CH 30V 7.3A/37A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 810mW (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 15 V
auf Bestellung 453600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1032+ | 0.48 EUR |
NTTFS4932NTAG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/79A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V
Description: MOSFET N-CH 30V 11A/79A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V
auf Bestellung 73565 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
646+ | 0.74 EUR |
NTTFS4H05NTWG |
Hersteller: onsemi
Description: MOSFET N-CH 25V 22.4A/94A 8WDFN
Description: MOSFET N-CH 25V 22.4A/94A 8WDFN
auf Bestellung 218180 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
507+ | 1.04 EUR |
NTTFS4943NTAG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 8A/41A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
Description: MOSFET N-CH 30V 8A/41A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
468+ | 1.07 EUR |
NTTFS4941NTAG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
auf Bestellung 16500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
410+ | 1.22 EUR |
NTTFS4823NTWG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
auf Bestellung 39942 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1158+ | 0.43 EUR |
NTTFS4929NTAG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.6A/34A 8WDFN
Description: MOSFET N-CH 30V 6.6A/34A 8WDFN
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1134+ | 0.46 EUR |
NTTFS4929NTWG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.6A/34A 8WDFN
Description: MOSFET N-CH 30V 6.6A/34A 8WDFN
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1191+ | 0.44 EUR |
NTTFS4823NTAG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
auf Bestellung 367762 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1158+ | 0.43 EUR |
NTTFS4930NTWG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1340+ | 0.39 EUR |
NTTFS4941NTWG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
419+ | 1.16 EUR |
NCP7662P |
Hersteller: onsemi
Description: IC REG LINEAR SWITCHED CAP REG
Description: IC REG LINEAR SWITCHED CAP REG
auf Bestellung 58376 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
577+ | 0.95 EUR |
NCP707CMX180TCG |
Hersteller: onsemi
Description: LDO REGULATOR, 200 MA, ULTRA-LOW
Description: LDO REGULATOR, 200 MA, ULTRA-LOW
auf Bestellung 1446000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2941+ | 0.17 EUR |
NCP786AMNADJTBG |
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 11MA 6DFN
Description: IC REG LINEAR POS ADJ 11MA 6DFN
Produkt ist nicht verfügbar
MC74AC32M |
Produkt ist nicht verfügbar
FUSB3317V6AMNWTWG |
Hersteller: onsemi
Description: AUTOMOTIVE USB PD3.0 WITH PROGRA
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Description: AUTOMOTIVE USB PD3.0 WITH PROGRA
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FUSB3317V6AMNWTWG |
Hersteller: onsemi
Description: AUTOMOTIVE USB PD3.0 WITH PROGRA
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Description: AUTOMOTIVE USB PD3.0 WITH PROGRA
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FUSB3307D90B0AFMNWTWG |
Hersteller: onsemi
Description: 90W USB TYPE-C PD SOURCE CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Description: 90W USB TYPE-C PD SOURCE CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FUSB3307D90B0AFMNWTWG |
Hersteller: onsemi
Description: 90W USB TYPE-C PD SOURCE CONTROL
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Description: 90W USB TYPE-C PD SOURCE CONTROL
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
auf Bestellung 3995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.87 EUR |
10+ | 2.58 EUR |
25+ | 2.44 EUR |
100+ | 1.95 EUR |
250+ | 1.71 EUR |
500+ | 1.66 EUR |
1000+ | 1.32 EUR |
FUSB3307D6A0BFMX |
Hersteller: onsemi
Description: 60W WITH PD2.0 USB TYPE-C PD SOU
Description: 60W WITH PD2.0 USB TYPE-C PD SOU
Produkt ist nicht verfügbar
FUSB3307D45A0AFMX |
Hersteller: onsemi
Description: 45W USB TYPE-C PD SOURCE CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 14-SOIC
DigiKey Programmable: Not Verified
Description: 45W USB TYPE-C PD SOURCE CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 14-SOIC
DigiKey Programmable: Not Verified
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.59 EUR |
FUSB3307D45A0AFMNWTWG |
Hersteller: onsemi
Description: 45W USB TYPE-C PD SOURCE CONTROL
Description: 45W USB TYPE-C PD SOURCE CONTROL
Produkt ist nicht verfügbar
ARRAYX-BOB6-64P-GEVK |
Hersteller: onsemi
Description: C/J-ARRAY 6MM 8X8 BOB
Packaging: Bulk
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: ArrayC-60035-64P
Supplied Contents: Board(s)
Description: C/J-ARRAY 6MM 8X8 BOB
Packaging: Bulk
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: ArrayC-60035-64P
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
MICRORD-SMTPA-10010-GEVB |
Hersteller: onsemi
Description: RD-SERIES 1MM 10U SMTPA
Packaging: Box
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: MicroRD
Supplied Contents: Board(s)
Embedded: No
Description: RD-SERIES 1MM 10U SMTPA
Packaging: Box
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: MicroRD
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
MICRORD-SMTPA-10020-GEVB |
Hersteller: onsemi
Description: RD-SERIES 1MM 20U SMTPA
Packaging: Box
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: MicroRD
Supplied Contents: Board(s)
Embedded: No
Description: RD-SERIES 1MM 20U SMTPA
Packaging: Box
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: MicroRD
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
MICRORD-SMTPA-10035-GEVB |
Hersteller: onsemi
Description: RD-SERIES 1MM 35U SMTPA
Packaging: Box
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: MicroRD
Supplied Contents: Board(s)
Embedded: No
Description: RD-SERIES 1MM 35U SMTPA
Packaging: Box
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: MicroRD
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
0339-671-TLM-E |
Hersteller: onsemi
Description: ANALOG CAR RADIO TUNER
Description: ANALOG CAR RADIO TUNER
auf Bestellung 83500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
224+ | 2.46 EUR |
M74VHC1G135DFT1G |
Hersteller: onsemi
Description: IC GATE NAND 1CH 2-INP SC88A
Packaging: Bulk
Features: Schmitt Trigger, Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: -, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.25V ~ 3.7V
Input Logic Level - Low: 0.65V ~ 1.45V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 1CH 2-INP SC88A
Packaging: Bulk
Features: Schmitt Trigger, Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: -, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.25V ~ 3.7V
Input Logic Level - Low: 0.65V ~ 1.45V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 8248 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3742+ | 0.13 EUR |
NCP1530DM27R2 |
Hersteller: onsemi
Description: IC REG BUCK 2.7V 600MA 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: 0°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 5V
Topology: Buck
Supplier Device Package: 8-MSOP
Synchronous Rectifier: No
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 2.7V
Description: IC REG BUCK 2.7V 600MA 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: 0°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 5V
Topology: Buck
Supplier Device Package: 8-MSOP
Synchronous Rectifier: No
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 2.7V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
523+ | 0.93 EUR |
NCP1530DM27R2G |
Hersteller: onsemi
Description: IC REG BUCK 2.7V 600MA 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: 0°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 5V
Topology: Buck
Supplier Device Package: 8-MSOP
Synchronous Rectifier: No
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 2.7V
Description: IC REG BUCK 2.7V 600MA 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: 0°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 5V
Topology: Buck
Supplier Device Package: 8-MSOP
Synchronous Rectifier: No
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 2.7V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
523+ | 0.93 EUR |
STTFS010N10MCL |
Hersteller: onsemi
Description: PTNG 100V LL
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
Description: PTNG 100V LL
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.69 EUR |
STTFS010N10MCL |
Hersteller: onsemi
Description: PTNG 100V LL
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
Description: PTNG 100V LL
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.57 EUR |
14+ | 1.28 EUR |
100+ | 1 EUR |
500+ | 0.85 EUR |
AR0239SRSC00SUEA0-DPBR |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1936H x 1188V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 90
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1936H x 1188V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 90
Produkt ist nicht verfügbar
AR0239SRSC00SUEA0-DP |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1936H x 1188V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 90
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1936H x 1188V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 90
Produkt ist nicht verfügbar
AR0239SRSC00SUEA0-DRBR |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1936H x 1188V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 90
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1936H x 1188V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 90
Produkt ist nicht verfügbar
SMMBD2837LT1G |
Hersteller: onsemi
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 258000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4965+ | 0.098 EUR |
1SMB60CAT3G |
Hersteller: onsemi
Description: TVS DIODE 60VWM 96.8VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 60VWM 96.8VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.39 EUR |
NVH4L015N065SC1 |
Hersteller: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 650V
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 107.45 EUR |
10+ | 97.67 EUR |
30+ | 94.42 EUR |
90+ | 87.91 EUR |
NVBG015N065SC1 |
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ISL9V3040P3-F085C |
Hersteller: onsemi
Description: IGBT 430V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: -/4.8µs
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 150 W
Description: IGBT 430V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: -/4.8µs
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 150 W
auf Bestellung 1648 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.87 EUR |
10+ | 3.48 EUR |
50+ | 3.28 EUR |
100+ | 2.63 EUR |
250+ | 2.3 EUR |
500+ | 2.23 EUR |
1000+ | 1.77 EUR |
NTMFS0D55N03CGT1G |
Hersteller: onsemi
Description: WIDE SOA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 30A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 224.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 15 V
Description: WIDE SOA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 30A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 224.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 15 V
Produkt ist nicht verfügbar
1PMT5933BT1G |
Hersteller: onsemi
Description: DIODE ZENER 22V 3.2W POWERMITE
Description: DIODE ZENER 22V 3.2W POWERMITE
Produkt ist nicht verfügbar
1PMT5933BT1G |
Hersteller: onsemi
Description: DIODE ZENER 22V 3.2W POWERMITE
Description: DIODE ZENER 22V 3.2W POWERMITE
auf Bestellung 3495 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.16 EUR |
18+ | 1.02 EUR |
100+ | 0.78 EUR |
500+ | 0.62 EUR |
1000+ | 0.49 EUR |
FQA7N80C-F109 |
auf Bestellung 18190 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 2.76 EUR |
FGD3040G2-F085C |
Hersteller: onsemi
Description: IGBT 400V 41A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 0.9µs/4.8µs
Test Condition: 300V, 6.5A, 1000Ohm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 400V 41A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 0.9µs/4.8µs
Test Condition: 300V, 6.5A, 1000Ohm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FGD3040G2-F085C |
Hersteller: onsemi
Description: IGBT 400V 41A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 0.9µs/4.8µs
Test Condition: 300V, 6.5A, 1000Ohm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 400V 41A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 0.9µs/4.8µs
Test Condition: 300V, 6.5A, 1000Ohm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.13 EUR |
10+ | 2.6 EUR |
100+ | 2.07 EUR |
500+ | 1.75 EUR |
1000+ | 1.48 EUR |
MBR60L45WTG |
Hersteller: onsemi
Description: RECTIFIER DIODE, SCHOTTKY, 1 PHA
Description: RECTIFIER DIODE, SCHOTTKY, 1 PHA
Produkt ist nicht verfügbar
LC74782M-9011-E |
auf Bestellung 14448 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
87+ | 5.69 EUR |
M74LCX16374DTR |
Hersteller: onsemi
Description: IC D-TYPE POS TRG DUAL 14TSSOP
Packaging: Bulk
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 170 MHz
Supplier Device Package: 48-TSSOP
Max Propagation Delay @ V, Max CL: 6.2ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC D-TYPE POS TRG DUAL 14TSSOP
Packaging: Bulk
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 170 MHz
Supplier Device Package: 48-TSSOP
Max Propagation Delay @ V, Max CL: 6.2ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
375+ | 1.41 EUR |