| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NCP58302DSADJR4G | onsemi |
 Description: IC REG LINEAR POS ADJ 3A D2PAK-5Packaging: Cut Tape (CT) Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 3A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 13.5V Number of Regulators: 1 Supplier Device Package: D2PAK-5 Voltage - Output (Max): 12.9V Voltage - Output (Min/Fixed): 1.24V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): 0.6V @ 3A Protection Features: Over Current, Over Temperature, Reverse Polarity |
Produkt ist nicht verfügbar |
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NCP692MNADJT2G | onsemi |
Description: IC REG LINEAR POS ADJ 1A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (3x3) Voltage - Output (Max): 5V Voltage - Output (Min/Fixed): 1.25V Control Features: Enable PSRR: 62dB ~ 40dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.47V @ 1A Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 240 µA |
Produkt ist nicht verfügbar |
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NCP705MT28TCG | onsemi |
Description: IC REG LINEAR 2.8V 500MA 6WDFN |
auf Bestellung 15066 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP705MT30TCG | onsemi |
Description: IC REG LINEAR 3V 500MA 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 25 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 3V Control Features: Enable Part Status: Active Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) |
auf Bestellung 10585 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP705MT33TCG | onsemi |
Description: IC REG LINEAR 3.3V 500MA 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 25 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) |
auf Bestellung 13797 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN9672Q | onsemi |
Description: IC PFC CTRLR CCM 75KHZ 32LQFP Packaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 15V Frequency - Switching: 18kHz ~ 40kHz, 55kHz ~ 75kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 32-LQFP (7x7) Current - Startup: 30 µA |
auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH041N65F-F155 | onsemi |
Description: MOSFET N-CH 650V 76A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 7.6mA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13020 pF @ 100 V |
Produkt ist nicht verfügbar |
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FCH077N65F-F155 | onsemi |
Description: MOSFET N-CH 650V 54A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 5.4mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7109 pF @ 100 V |
auf Bestellung 339 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH110N65F-F155 | onsemi |
Description: MOSFET N-CH 650V 35A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
auf Bestellung 902 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH170N60 | onsemi |
Description: MOSFET N-CH 600V 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH190N65F-F155 | onsemi |
Description: MOSFET N-CH 650V 20.6A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 2mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 100 V |
auf Bestellung 865 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP104N60 | onsemi |
Description: MOSFET N-CH 600V 37A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V |
auf Bestellung 216 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP110N65F | onsemi |
Description: MOSFET N-CH 650V 35A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP190N65F | onsemi |
Description: MOSFET N-CH 650V 20.6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 2mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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FGI3040G2-F085 | onsemi |
Description: ECOSPARK 2-400V IGNITION IGBT Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-262 (I2PAK) Td (on/off) @ 25°C: 900ns/4.8µs Gate Charge: 21 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Qualification: AEC-Q101 |
auf Bestellung 399 Stücke: Lieferzeit 10-14 Tag (e) |
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FGP3040G2-F085 | onsemi |
Description: IGBT 400V 41A TO220-3 |
auf Bestellung 393 Stücke: Lieferzeit 10-14 Tag (e) |
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FGP3440G2-F085 | onsemi |
Description: ECOSPARK 2 IGNITION IGBT Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 1µs/5.3µs Gate Charge: 24 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 26.9 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 166 W Qualification: AEC-Q101 |
auf Bestellung 332 Stücke: Lieferzeit 10-14 Tag (e) |
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FSBB10CH120D | onsemi |
Description: MODULE SPM 1.2V 10A 27PWRDIP |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN7391MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 25ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 2.5V Current - Peak Output (Source, Sink): 4.5A, 4.5A Part Status: Last Time Buy DigiKey Programmable: Not Verified |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD9407-F085 | onsemi |
Description: MOSFET N-CH 40V 100A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDD9409-F085 | onsemi |
Description: MOSFET N-CH 40V 90A DPAK |
Produkt ist nicht verfügbar |
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FGD3245G2-F085 | onsemi |
Description: IGBT 450V 23A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 900ns/5.4µs Gate Charge: 23 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 150 W Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50660SFS | onsemi |
Description: MODULE SPM 600V 3.1A 23PWRSMD Packaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Obsolete Current: 3.1 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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FSB50760SFS | onsemi |
Description: MODULE SPM 600V 2A SPM5P-023 Packaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Obsolete Current: 3.6 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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FAN3121TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 23ns, 19ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 10.6A, 11.4A Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FDB86360-F085 | onsemi |
Description: MOSFET N-CH 80V 110A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8350L | onsemi |
Description: MOSFET N-CH 40V 47A/200A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V Power Dissipation (Max): 2.7W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17500 pF @ 20 V |
Produkt ist nicht verfügbar |
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FDMS86163P | onsemi |
Description: MOSFET P-CH 100V 7.9A/50A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDN86265P | onsemi |
Description: MOSFET P-CH 150V 800MA SUPERSOT3 |
Produkt ist nicht verfügbar |
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FGB3040G2-F085 | onsemi |
Description: IGBT 400V 41A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: D²PAK (TO-263) Td (on/off) @ 25°C: 900ns/4.8µs Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W |
Produkt ist nicht verfügbar |
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FPF2498BUCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP Packaging: Tape & Reel (TR) Features: Slew Rate Controlled, Status Flag Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 3.5V ~ 12V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.7A Ratio - Input:Output: 1:1 Supplier Device Package: 6-WLCSP (1.23x0.88) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF3042UCX | onsemi |
Description: IC OR CTRLR SRC SELECT 16WLCSP |
Produkt ist nicht verfügbar |
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FAN7391MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 25ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 2.5V Current - Peak Output (Source, Sink): 4.5A, 4.5A Part Status: Last Time Buy DigiKey Programmable: Not Verified |
auf Bestellung 21634 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD9407-F085 | onsemi |
Description: MOSFET N-CH 40V 100A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDD9409-F085 | onsemi |
Description: MOSFET N-CH 40V 90A DPAK |
Produkt ist nicht verfügbar |
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FGD3245G2-F085 | onsemi |
Description: IGBT 450V 23A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 900ns/5.4µs Gate Charge: 23 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7754 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50660SFS | onsemi |
Description: MODULE SPM 600V 3.1A 23PWRSMD Packaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Obsolete Current: 3.1 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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FSB50760SFS | onsemi |
Description: MODULE SPM 600V 2A SPM5P-023 Packaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Obsolete Current: 3.6 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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FDB86360-F085 | onsemi |
Description: MOSFET N-CH 80V 110A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V |
auf Bestellung 1969 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8350L | onsemi |
Description: MOSFET N-CH 40V 47A/200A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V Power Dissipation (Max): 2.7W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17500 pF @ 20 V |
Produkt ist nicht verfügbar |
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FDMS86163P | onsemi |
Description: MOSFET P-CH 100V 7.9A/50A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V |
auf Bestellung 13435 Stücke: Lieferzeit 10-14 Tag (e) |
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FDN86265P | onsemi |
Description: MOSFET P-CH 150V 800MA SUPERSOT3 |
Produkt ist nicht verfügbar |
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FGB3040G2-F085 | onsemi |
Description: IGBT 400V 41A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: D²PAK (TO-263) Td (on/off) @ 25°C: 900ns/4.8µs Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W |
auf Bestellung 633 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF2498BUCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP Packaging: Cut Tape (CT) Features: Slew Rate Controlled, Status Flag Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 3.5V ~ 12V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.7A Ratio - Input:Output: 1:1 Supplier Device Package: 6-WLCSP (1.23x0.88) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
auf Bestellung 11050 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF3042UCX | onsemi |
Description: IC OR CTRLR SRC SELECT 16WLCSP |
auf Bestellung 701 Stücke: Lieferzeit 10-14 Tag (e) |
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BD244CTU | onsemi |
Description: TRANS PNP 100V 6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 65 W |
Produkt ist nicht verfügbar |
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FGH40N60SMD-F085 | onsemi |
Description: IGBT 600V 80A 349W TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/110ns Switching Energy: 920µJ (on), 300µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 180 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 241 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH40T65SHDF-F155 | onsemi |
Description: IGBT FIELD STOP 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/64ns Switching Energy: 1.22mJ (on), 440µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 68 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
auf Bestellung 463 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH60N60SMD-F085 | onsemi |
Description: IGBT 600V 120A 600W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 22ns/116ns Switching Energy: 1.59mJ (on), 390µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 280 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 600 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FOD8333 | onsemi |
Description: OPTOISO 4.243KV GATE DRVR 16SO |
auf Bestellung 2798 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8384 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 5SOP Packaging: Tube Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 5-SOP Rise / Fall Time (Typ): 35ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
Produkt ist nicht verfügbar |
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6N137TSR2VM | onsemi |
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 136500 Stücke: Lieferzeit 10-14 Tag (e) |
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FSL306LRLX | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 7LSOP Packaging: Tape & Reel (TR) Package / Case: 8-SMD (7 Leads), Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 50kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 7V ~ 26V Supplier Device Package: 7-LSOP Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 8 V Part Status: Active Power (Watts): 7 W |
Produkt ist nicht verfügbar |
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6N137TSR2VM | onsemi |
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 136800 Stücke: Lieferzeit 10-14 Tag (e) |
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FSL306LRLX | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 7LSOP Packaging: Cut Tape (CT) Package / Case: 8-SMD (7 Leads), Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 50kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 7V ~ 26V Supplier Device Package: 7-LSOP Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 8 V Part Status: Active Power (Watts): 7 W |
Produkt ist nicht verfügbar |
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FCPF1300N80Z | onsemi |
Description: MOSFET N-CH 800V 4A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP150N65F | onsemi |
Description: MOSFET N-CH 650V 24A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.4mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V |
auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF650N80Z | onsemi |
Description: MOSFET N-CH 800V 8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V Power Dissipation (Max): 30.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 800µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V |
auf Bestellung 986 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF850N80Z | onsemi |
Description: MOSFET N-CH 800V 6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 600µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FAN4149M6X | onsemi |
Description: IC CTRLR LOW PWR AC GFI SOT23 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -35°C ~ 85°C Applications: Ground Fault Protection Current - Supply: 500µA Supplier Device Package: SOT-23-6 |
Produkt ist nicht verfügbar |
| NCP58302DSADJR4G |
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Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 3A D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 13.5V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Max): 12.9V
Voltage - Output (Min/Fixed): 1.24V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.6V @ 3A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Description: IC REG LINEAR POS ADJ 3A D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 13.5V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Max): 12.9V
Voltage - Output (Min/Fixed): 1.24V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.6V @ 3A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Produkt ist nicht verfügbar
| NCP692MNADJT2G |
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Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 1A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
PSRR: 62dB ~ 40dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.47V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 240 µA
Description: IC REG LINEAR POS ADJ 1A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
PSRR: 62dB ~ 40dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.47V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 240 µA
Produkt ist nicht verfügbar
| NCP705MT28TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 2.8V 500MA 6WDFN
Description: IC REG LINEAR 2.8V 500MA 6WDFN
auf Bestellung 15066 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.8 EUR |
| 11+ | 1.61 EUR |
| 25+ | 1.53 EUR |
| 100+ | 1.25 EUR |
| 250+ | 1.17 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.82 EUR |
| NCP705MT30TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 3V 500MA 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 3V 500MA 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
auf Bestellung 10585 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 1.51 EUR |
| 13+ | 1.36 EUR |
| 25+ | 1.29 EUR |
| 100+ | 0.99 EUR |
| 250+ | 0.87 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.64 EUR |
| NCP705MT33TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 500MA 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 3.3V 500MA 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
auf Bestellung 13797 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 1.53 EUR |
| 14+ | 1.35 EUR |
| 25+ | 1.27 EUR |
| 100+ | 0.96 EUR |
| 250+ | 0.82 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.59 EUR |
| FAN9672Q |
|
Hersteller: onsemi
Description: IC PFC CTRLR CCM 75KHZ 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 15V
Frequency - Switching: 18kHz ~ 40kHz, 55kHz ~ 75kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 32-LQFP (7x7)
Current - Startup: 30 µA
Description: IC PFC CTRLR CCM 75KHZ 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 15V
Frequency - Switching: 18kHz ~ 40kHz, 55kHz ~ 75kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 32-LQFP (7x7)
Current - Startup: 30 µA
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.52 EUR |
| 10+ | 8.56 EUR |
| 25+ | 8.09 EUR |
| 80+ | 6.65 EUR |
| 230+ | 5.97 EUR |
| 440+ | 5.75 EUR |
| 945+ | 4.78 EUR |
| FCH041N65F-F155 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.6mA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13020 pF @ 100 V
Description: MOSFET N-CH 650V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.6mA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13020 pF @ 100 V
Produkt ist nicht verfügbar
| FCH077N65F-F155 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7109 pF @ 100 V
Description: MOSFET N-CH 650V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7109 pF @ 100 V
auf Bestellung 339 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 16.51 EUR |
| 30+ | 13.18 EUR |
| 120+ | 11.79 EUR |
| FCH110N65F-F155 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 5.98 EUR |
| 30+ | 4.75 EUR |
| 120+ | 4.07 EUR |
| 510+ | 3.98 EUR |
| FCH170N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
Description: MOSFET N-CH 600V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.75 EUR |
| 30+ | 7.73 EUR |
| 120+ | 6.62 EUR |
| FCH190N65F-F155 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 20.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 100 V
Description: MOSFET N-CH 650V 20.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 100 V
auf Bestellung 865 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 10.37 EUR |
| 10+ | 8.7 EUR |
| 450+ | 6.26 EUR |
| FCP104N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V
Description: MOSFET N-CH 600V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.84 EUR |
| 50+ | 7.8 EUR |
| 100+ | 6.68 EUR |
| FCP110N65F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.55 EUR |
| 50+ | 5.98 EUR |
| 100+ | 5.13 EUR |
| 500+ | 5.01 EUR |
| FCP190N65F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 20.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V
Description: MOSFET N-CH 650V 20.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.04 EUR |
| 50+ | 5.57 EUR |
| 100+ | 4.78 EUR |
| 500+ | 4.25 EUR |
| 1000+ | 3.64 EUR |
| 2000+ | 3.42 EUR |
| FGI3040G2-F085 |
|
Hersteller: onsemi
Description: ECOSPARK 2-400V IGNITION IGBT
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 900ns/4.8µs
Gate Charge: 21 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Qualification: AEC-Q101
Description: ECOSPARK 2-400V IGNITION IGBT
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 900ns/4.8µs
Gate Charge: 21 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.47 EUR |
| 50+ | 4.34 EUR |
| 100+ | 3.72 EUR |
| FGP3040G2-F085 |
|
Hersteller: onsemi
Description: IGBT 400V 41A TO220-3
Description: IGBT 400V 41A TO220-3
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.37 EUR |
| 10+ | 6.62 EUR |
| 100+ | 5.42 EUR |
| FGP3440G2-F085 |
|
Hersteller: onsemi
Description: ECOSPARK 2 IGNITION IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 1µs/5.3µs
Gate Charge: 24 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 26.9 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 166 W
Qualification: AEC-Q101
Description: ECOSPARK 2 IGNITION IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 1µs/5.3µs
Gate Charge: 24 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 26.9 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 166 W
Qualification: AEC-Q101
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.11 EUR |
| 10+ | 5.13 EUR |
| 100+ | 4.15 EUR |
| FSBB10CH120D |
|
Hersteller: onsemi
Description: MODULE SPM 1.2V 10A 27PWRDIP
Description: MODULE SPM 1.2V 10A 27PWRDIP
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 65.23 EUR |
| 10+ | 60.15 EUR |
| FAN7391MX |
|
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.56 EUR |
| 5000+ | 1.5 EUR |
| FDD9407-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| FGD3245G2-F085 |
|
Hersteller: onsemi
Description: IGBT 450V 23A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/5.4µs
Gate Charge: 23 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
Description: IGBT 450V 23A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/5.4µs
Gate Charge: 23 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.88 EUR |
| 5000+ | 1.81 EUR |
| FSB50660SFS |
|
Hersteller: onsemi
Description: MODULE SPM 600V 3.1A 23PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3.1 A
Voltage: 600 V
Description: MODULE SPM 600V 3.1A 23PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3.1 A
Voltage: 600 V
Produkt ist nicht verfügbar
| FSB50760SFS |
|
Hersteller: onsemi
Description: MODULE SPM 600V 2A SPM5P-023
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3.6 A
Voltage: 600 V
Description: MODULE SPM 600V 2A SPM5P-023
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3.6 A
Voltage: 600 V
Produkt ist nicht verfügbar
| FAN3121TMX-F085 |
|
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 23ns, 19ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 23ns, 19ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| FDB86360-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
Description: MOSFET N-CH 80V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 5.57 EUR |
| FDMS8350L |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 47A/200A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17500 pF @ 20 V
Description: MOSFET N-CH 40V 47A/200A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17500 pF @ 20 V
Produkt ist nicht verfügbar
| FDMS86163P |
|
Hersteller: onsemi
Description: MOSFET P-CH 100V 7.9A/50A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V
Description: MOSFET P-CH 100V 7.9A/50A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.17 EUR |
| 6000+ | 2.09 EUR |
| FDN86265P |
|
Hersteller: onsemi
Description: MOSFET P-CH 150V 800MA SUPERSOT3
Description: MOSFET P-CH 150V 800MA SUPERSOT3
Produkt ist nicht verfügbar
| FGB3040G2-F085 |
|
Hersteller: onsemi
Description: IGBT 400V 41A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: D²PAK (TO-263)
Td (on/off) @ 25°C: 900ns/4.8µs
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Description: IGBT 400V 41A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: D²PAK (TO-263)
Td (on/off) @ 25°C: 900ns/4.8µs
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Produkt ist nicht verfügbar
| FPF2498BUCX |
|
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 3.5V ~ 12V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.23x0.88)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 3.5V ~ 12V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.23x0.88)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.62 EUR |
| 6000+ | 0.6 EUR |
| FPF3042UCX |
|
Hersteller: onsemi
Description: IC OR CTRLR SRC SELECT 16WLCSP
Description: IC OR CTRLR SRC SELECT 16WLCSP
Produkt ist nicht verfügbar
| FAN7391MX |
|
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 21634 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.52 EUR |
| 10+ | 3.17 EUR |
| 25+ | 2.99 EUR |
| 100+ | 2.39 EUR |
| 250+ | 2.09 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.62 EUR |
| FDD9407-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| FGD3245G2-F085 |
|
Hersteller: onsemi
Description: IGBT 450V 23A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/5.4µs
Gate Charge: 23 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 450V 23A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/5.4µs
Gate Charge: 23 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7754 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 4.19 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.34 EUR |
| 1000+ | 1.98 EUR |
| FSB50660SFS |
|
Hersteller: onsemi
Description: MODULE SPM 600V 3.1A 23PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3.1 A
Voltage: 600 V
Description: MODULE SPM 600V 3.1A 23PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3.1 A
Voltage: 600 V
Produkt ist nicht verfügbar
| FSB50760SFS |
|
Hersteller: onsemi
Description: MODULE SPM 600V 2A SPM5P-023
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3.6 A
Voltage: 600 V
Description: MODULE SPM 600V 2A SPM5P-023
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3.6 A
Voltage: 600 V
Produkt ist nicht verfügbar
| FDB86360-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
Description: MOSFET N-CH 80V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
auf Bestellung 1969 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.22 EUR |
| 10+ | 7.74 EUR |
| 100+ | 6.26 EUR |
| FDMS8350L |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 47A/200A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17500 pF @ 20 V
Description: MOSFET N-CH 40V 47A/200A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17500 pF @ 20 V
Produkt ist nicht verfügbar
| FDMS86163P |
|
Hersteller: onsemi
Description: MOSFET P-CH 100V 7.9A/50A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V
Description: MOSFET P-CH 100V 7.9A/50A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V
auf Bestellung 13435 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.8 EUR |
| 10+ | 4 EUR |
| 100+ | 3.18 EUR |
| 500+ | 2.69 EUR |
| 1000+ | 2.28 EUR |
| FDN86265P |
|
Hersteller: onsemi
Description: MOSFET P-CH 150V 800MA SUPERSOT3
Description: MOSFET P-CH 150V 800MA SUPERSOT3
Produkt ist nicht verfügbar
| FGB3040G2-F085 |
|
Hersteller: onsemi
Description: IGBT 400V 41A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: D²PAK (TO-263)
Td (on/off) @ 25°C: 900ns/4.8µs
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Description: IGBT 400V 41A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: D²PAK (TO-263)
Td (on/off) @ 25°C: 900ns/4.8µs
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
auf Bestellung 633 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.14 EUR |
| 10+ | 4.62 EUR |
| 100+ | 3.78 EUR |
| FPF2498BUCX |
|
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 3.5V ~ 12V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.23x0.88)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 3.5V ~ 12V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.23x0.88)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
auf Bestellung 11050 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 1.53 EUR |
| 13+ | 1.37 EUR |
| 25+ | 1.3 EUR |
| 100+ | 1 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.65 EUR |
| FPF3042UCX |
|
Hersteller: onsemi
Description: IC OR CTRLR SRC SELECT 16WLCSP
Description: IC OR CTRLR SRC SELECT 16WLCSP
auf Bestellung 701 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.87 EUR |
| 10+ | 2.56 EUR |
| 25+ | 2.43 EUR |
| 100+ | 2 EUR |
| 250+ | 1.87 EUR |
| 500+ | 1.65 EUR |
| BD244CTU |
|
Hersteller: onsemi
Description: TRANS PNP 100V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
Description: TRANS PNP 100V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
Produkt ist nicht verfügbar
| FGH40N60SMD-F085 |
|
Hersteller: onsemi
Description: IGBT 600V 80A 349W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 920µJ (on), 300µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 600V 80A 349W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 920µJ (on), 300µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 10.37 EUR |
| 30+ | 8.28 EUR |
| 120+ | 7.41 EUR |
| FGH40T65SHDF-F155 |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Switching Energy: 1.22mJ (on), 440µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT FIELD STOP 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Switching Energy: 1.22mJ (on), 440µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
auf Bestellung 463 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.14 EUR |
| 30+ | 4.86 EUR |
| 120+ | 4.17 EUR |
| FGH60N60SMD-F085 |
Hersteller: onsemi
Description: IGBT 600V 120A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/116ns
Switching Energy: 1.59mJ (on), 390µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 280 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 600V 120A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/116ns
Switching Energy: 1.59mJ (on), 390µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 280 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| FOD8333 |
|
Hersteller: onsemi
Description: OPTOISO 4.243KV GATE DRVR 16SO
Description: OPTOISO 4.243KV GATE DRVR 16SO
auf Bestellung 2798 Stücke:
Lieferzeit 10-14 Tag (e)| FOD8384 |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Packaging: Tube
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 35ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Packaging: Tube
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 35ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
| 6N137TSR2VM |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 136500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 700+ | 1.32 EUR |
| FSL306LRLX |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Part Status: Active
Power (Watts): 7 W
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Part Status: Active
Power (Watts): 7 W
Produkt ist nicht verfügbar
| 6N137TSR2VM |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 136800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.68 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.89 EUR |
| FSL306LRLX |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Part Status: Active
Power (Watts): 7 W
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Part Status: Active
Power (Watts): 7 W
Produkt ist nicht verfügbar
| FCPF1300N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
Description: MOSFET N-CH 800V 4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.37 EUR |
| 1000+ | 2.01 EUR |
| FCP150N65F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.4 EUR |
| 50+ | 6.64 EUR |
| 100+ | 5.69 EUR |
| 500+ | 5.06 EUR |
| 1000+ | 4.33 EUR |
| 2000+ | 4.08 EUR |
| FCPF650N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
Description: MOSFET N-CH 800V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.21 EUR |
| 50+ | 4.12 EUR |
| 100+ | 3.54 EUR |
| 500+ | 3.14 EUR |
| FCPF850N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
Description: MOSFET N-CH 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.4 EUR |
| 50+ | 3.49 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.66 EUR |
| 1000+ | 2.28 EUR |
| FAN4149M6X |
|
Hersteller: onsemi
Description: IC CTRLR LOW PWR AC GFI SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Applications: Ground Fault Protection
Current - Supply: 500µA
Supplier Device Package: SOT-23-6
Description: IC CTRLR LOW PWR AC GFI SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Applications: Ground Fault Protection
Current - Supply: 500µA
Supplier Device Package: SOT-23-6
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