Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NL27WZ07DTT1G | onsemi |
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auf Bestellung 25460 Stücke: Lieferzeit 10-14 Tag (e) |
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NL27WZ126USG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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NL37WZ07USG | onsemi |
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Produkt ist nicht verfügbar |
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NLAS3158MNR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 12-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 13Ohm -3db Bandwidth: 250MHz Supplier Device Package: 12-DFN (3x1) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 2.3pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
auf Bestellung 26768 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAS3799BLMNR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 400mOhm -3db Bandwidth: 19MHz Supplier Device Package: 16-WQFN (1.8x2.6) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Charge Injection: 51pC Crosstalk: -90dB @ 100kHz Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:2 Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Switch Time (Ton, Toff) (Max): 50ns, 30ns Channel Capacitance (CS(off), CD(off)): 3pF Current - Leakage (IS(off)) (Max): 500nA Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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NLAS4053DR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 180MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 3V ~ 5V Voltage - Supply, Dual (V±): ±3V Charge Injection: 12pC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 23ns, 23ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 3 |
auf Bestellung 4838 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAS4053DTR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 180MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 3V ~ 5V Voltage - Supply, Dual (V±): ±3V Charge Injection: 12pC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 23ns, 23ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 3 |
auf Bestellung 4700 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAS4157DFT2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.15Ohm -3db Bandwidth: 40MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 48pC Crosstalk: -57dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 120mOhm Switch Time (Ton, Toff) (Max): 20ns, 15ns Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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NLAS4501DFT2G | onsemi |
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Produkt ist nicht verfügbar |
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NLAS4599DTT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 220MHz Supplier Device Package: 6-TSOP Voltage - Supply, Single (V+): 2V ~ 5.5V Charge Injection: 3pC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 2Ohm Switch Time (Ton, Toff) (Max): 14ns, 8ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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NLAS4684FCT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 10-UFBGA, FCBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 800mOhm -3db Bandwidth: 9.5MHz Supplier Device Package: 10-Microbump Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 15pC Crosstalk: -83dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 60mOhm Switch Time (Ton, Toff) (Max): 30ns, 30ns Channel Capacitance (CS(off), CD(off)): 102pF, 104pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 2 |
auf Bestellung 2949 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAS4684MR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 800mOhm -3db Bandwidth: 9.5MHz Supplier Device Package: 10-Micro Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 15pC Crosstalk: -83dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 60mOhm Switch Time (Ton, Toff) (Max): 30ns, 30ns Channel Capacitance (CS(off), CD(off)): 102pF, 104pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 2 |
auf Bestellung 5735 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAS4717EPFCT1G | onsemi |
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auf Bestellung 2385 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAS4783BMN1R2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1Ohm -3db Bandwidth: 17MHz Supplier Device Package: 16-QFN (3x3) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Charge Injection: 50pC Crosstalk: -62dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 400mOhm (Max) Switch Time (Ton, Toff) (Max): 27ns, 20ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 500nA Part Status: Active Number of Circuits: 3 |
auf Bestellung 1277 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAS4783MN1R2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1Ohm -3db Bandwidth: 17MHz Supplier Device Package: 16-QFN (3x3) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Charge Injection: 50pC Crosstalk: -62dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 400mOhm (Max) Switch Time (Ton, Toff) (Max): 27ns, 20ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 500nA Part Status: Active Number of Circuits: 3 |
auf Bestellung 379 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAS5223BMNR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 10-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 350mOhm -3db Bandwidth: 19MHz Supplier Device Package: 10-WQFN (1.4x1.8) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Charge Injection: 38pC Crosstalk: -70dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Switch Time (Ton, Toff) (Max): 50ns, 50ns Channel Capacitance (CS(off), CD(off)): 60pF Current - Leakage (IS(off)) (Max): 500nA Part Status: Active Number of Circuits: 2 |
auf Bestellung 4506 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAS5223LMNR2G | onsemi |
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Produkt ist nicht verfügbar |
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NLAS5223MNR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 10-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 300mOhm -3db Bandwidth: 17MHz Supplier Device Package: 10-WQFN (1.4x1.8) Voltage - Supply, Single (V+): 1.65V ~ 3.6V Charge Injection: 38pC Crosstalk: -70dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Switch Time (Ton, Toff) (Max): 50ns, 30ns Channel Capacitance (CS(off), CD(off)): 75pF Current - Leakage (IS(off)) (Max): 500nA Part Status: Active Number of Circuits: 2 |
auf Bestellung 2940 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAS7222AMTR2G | onsemi |
![]() Features: USB 2.0 Packaging: Cut Tape (CT) Package / Case: 10-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 9Ohm -3db Bandwidth: 700MHz Supplier Device Package: 10-WQFN (1.4x1.8) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: DPDT Part Status: Active Number of Channels: 1 |
auf Bestellung 1174 Stücke: Lieferzeit 10-14 Tag (e) |
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NLASB3157MTR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 7Ohm -3db Bandwidth: 250MHz Supplier Device Package: 6-WDFN (1.2x1) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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NLAST4051DTR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 95MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 3V ~ 5V Voltage - Supply, Dual (V±): ±3V Charge Injection: 12pC Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 23ns, 23ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 100pA Part Status: Active Number of Circuits: 1 |
auf Bestellung 2198 Stücke: Lieferzeit 10-14 Tag (e) |
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NLAST4599DTT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 200MHz Supplier Device Package: 6-TSOP Voltage - Supply, Single (V+): 2V ~ 5.5V Charge Injection: 3pC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 2Ohm Switch Time (Ton, Toff) (Max): 14ns, 8ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 1nA Part Status: Active Number of Circuits: 1 |
auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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NLSF595DTR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Voltage - Output: 5.5V Mounting Type: Surface Mount Number of Outputs: 8 Type: Linear Operating Temperature: -55°C ~ 125°C (TA) Current - Output / Channel: 12mA Internal Switch(s): Yes Supplier Device Package: 16-TSSOP Voltage - Supply (Min): 2V Voltage - Supply (Max): 5.5V Part Status: Active |
auf Bestellung 8835 Stücke: Lieferzeit 10-14 Tag (e) |
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NLSF595MNR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Voltage - Output: 5.5V Mounting Type: Surface Mount Number of Outputs: 8 Type: Linear Operating Temperature: -55°C ~ 125°C (TA) Current - Output / Channel: 12mA Internal Switch(s): Yes Supplier Device Package: 16-QFN (3x3) Voltage - Supply (Min): 2V Voltage - Supply (Max): 5.5V Part Status: Active |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC115EDXV6T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 100kOhms Resistor - Emitter Base (R2): 100kOhms Supplier Device Package: SOT-563 |
auf Bestellung 196000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSR0320MW2T3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 29pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA Current - Reverse Leakage @ Vr: 50 µA @ 15 V |
auf Bestellung 46125 Stücke: Lieferzeit 10-14 Tag (e) |
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NSR30CM3T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-723 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
auf Bestellung 59719 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS20300MR6T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V Frequency - Transition: 100MHz Supplier Device Package: 6-TSOP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 545 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS30100LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW |
auf Bestellung 272679 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS30101LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW |
auf Bestellung 10972 Stücke: Lieferzeit 10-14 Tag (e) |
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NST30010MXV6T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-563 |
auf Bestellung 6056 Stücke: Lieferzeit 10-14 Tag (e) |
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NST3904DXV6T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
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NST3946DXV6T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz, 250MHz Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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NST489AMT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 300MHz Supplier Device Package: 6-TSOP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 535 mW |
auf Bestellung 60099 Stücke: Lieferzeit 10-14 Tag (e) |
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NTB23N03RT4G | onsemi |
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Produkt ist nicht verfügbar |
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NTB60N06LT4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTB60N06T4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTB75N06T4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTD14N03RT4G | onsemi |
![]() ![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V |
auf Bestellung 10454 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD20N06T4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V |
auf Bestellung 5475 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD24N06T4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTD3055-150T4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD3055L170T4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTD40N03RT4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V |
Produkt ist nicht verfügbar |
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NTD4302T4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V |
Produkt ist nicht verfügbar |
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NTD4809NHT4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTD70N03RT4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V |
Produkt ist nicht verfügbar |
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NTD78N03T4G | onsemi |
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Produkt ist nicht verfügbar |
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NTD85N02RT4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V |
Produkt ist nicht verfügbar |
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NTF3055L108T3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTF5P03T3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V |
auf Bestellung 15471 Stücke: Lieferzeit 10-14 Tag (e) |
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NTF6P02T3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V Power Dissipation (Max): 8.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V |
auf Bestellung 36745 Stücke: Lieferzeit 10-14 Tag (e) |
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NTGS3130NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V |
auf Bestellung 16905 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHC5513T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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NTHD2102PT1G | onsemi |
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Produkt ist nicht verfügbar |
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NTHD3102CT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
auf Bestellung 66005 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHD4102PT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
auf Bestellung 24338 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHD4401PT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Obsolete |
Produkt ist nicht verfügbar |
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NTHD4P02FT1G | onsemi |
Description: MOSFET P-CH 20V 2.2A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj) Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
auf Bestellung 2924 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHS4101PT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj) Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V |
auf Bestellung 8830 Stücke: Lieferzeit 10-14 Tag (e) |
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NL27WZ07DTT1G |
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Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6TSOP
Description: IC BUFFER NON-INVERT 5.5V 6TSOP
auf Bestellung 25460 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
32+ | 0.55 EUR |
35+ | 0.51 EUR |
100+ | 0.38 EUR |
250+ | 0.34 EUR |
500+ | 0.28 EUR |
1000+ | 0.21 EUR |
NL27WZ126USG |
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Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Part Status: Obsolete
Produkt ist nicht verfügbar
NL37WZ07USG |
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Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Description: IC BUFFER NON-INVERT 5.5V US8
Produkt ist nicht verfügbar
NLAS3158MNR2G |
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Hersteller: onsemi
Description: IC SWITCH SPDT X 2 13OHM 12DFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 12-DFN (3x1)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 13OHM 12DFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 12-DFN (3x1)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 26768 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.44 EUR |
14+ | 1.28 EUR |
25+ | 1.2 EUR |
100+ | 0.91 EUR |
250+ | 0.77 EUR |
500+ | 0.74 EUR |
1000+ | 0.56 EUR |
NLAS3799BLMNR2G |
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Hersteller: onsemi
Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 51pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 51pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
Produkt ist nicht verfügbar
NLAS4053DR2G |
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Hersteller: onsemi
Description: IC SWITCH SPDT X 3 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 4838 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.36 EUR |
15+ | 1.19 EUR |
25+ | 1.12 EUR |
100+ | 0.85 EUR |
250+ | 0.72 EUR |
500+ | 0.69 EUR |
1000+ | 0.52 EUR |
NLAS4053DTR2G |
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Hersteller: onsemi
Description: IC SWITCH SPDT X 3 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 4700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.39 EUR |
15+ | 1.24 EUR |
25+ | 1.18 EUR |
100+ | 0.9 EUR |
250+ | 0.8 EUR |
500+ | 0.76 EUR |
1000+ | 0.59 EUR |
NLAS4157DFT2G |
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Hersteller: onsemi
Description: IC SWITCH SPDT SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.15Ohm
-3db Bandwidth: 40MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 48pC
Crosstalk: -57dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.15Ohm
-3db Bandwidth: 40MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 48pC
Crosstalk: -57dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
NLAS4599DTT1G |
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Hersteller: onsemi
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
NLAS4684FCT1G |
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Hersteller: onsemi
Description: IC SWITCH DUAL SPDT 10MICROBUMP
Packaging: Cut Tape (CT)
Package / Case: 10-UFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-Microbump
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH DUAL SPDT 10MICROBUMP
Packaging: Cut Tape (CT)
Package / Case: 10-UFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-Microbump
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
auf Bestellung 2949 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.78 EUR |
12+ | 1.59 EUR |
25+ | 1.51 EUR |
100+ | 1.24 EUR |
250+ | 1.16 EUR |
500+ | 1.02 EUR |
1000+ | 0.81 EUR |
NLAS4684MR2G |
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Hersteller: onsemi
Description: IC SWITCH DUAL SPDT MICRO10
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-Micro
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH DUAL SPDT MICRO10
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-Micro
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
auf Bestellung 5735 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.9 EUR |
11+ | 1.7 EUR |
25+ | 1.61 EUR |
100+ | 1.32 EUR |
250+ | 1.24 EUR |
500+ | 1.09 EUR |
1000+ | 0.86 EUR |
NLAS4717EPFCT1G |
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Hersteller: onsemi
Description: IC SWITCH DUAL SPDT 10MICROBUMP
Description: IC SWITCH DUAL SPDT 10MICROBUMP
auf Bestellung 2385 Stücke:
Lieferzeit 10-14 Tag (e)NLAS4783BMN1R2G |
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Hersteller: onsemi
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 50pC
Crosstalk: -62dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 50pC
Crosstalk: -62dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 1277 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.5 EUR |
10+ | 2.24 EUR |
25+ | 2.12 EUR |
100+ | 1.63 EUR |
250+ | 1.44 EUR |
500+ | 1.37 EUR |
1000+ | 1.06 EUR |
NLAS4783MN1R2G |
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Hersteller: onsemi
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 50pC
Crosstalk: -62dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 50pC
Crosstalk: -62dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.5 EUR |
10+ | 2.24 EUR |
25+ | 2.12 EUR |
100+ | 1.63 EUR |
250+ | 1.44 EUR |
NLAS5223BMNR2G |
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Hersteller: onsemi
Description: IC SWITCH SPDTX2 350MOHM 10WQFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 350mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 50ns
Channel Capacitance (CS(off), CD(off)): 60pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SPDTX2 350MOHM 10WQFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 350mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 50ns
Channel Capacitance (CS(off), CD(off)): 60pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 4506 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1 EUR |
20+ | 0.89 EUR |
25+ | 0.84 EUR |
100+ | 0.64 EUR |
250+ | 0.54 EUR |
500+ | 0.51 EUR |
1000+ | 0.39 EUR |
NLAS5223LMNR2G |
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Hersteller: onsemi
Description: IC SWITCH DUAL SPDT 10WQFN
Description: IC SWITCH DUAL SPDT 10WQFN
Produkt ist nicht verfügbar
NLAS5223MNR2G |
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Hersteller: onsemi
Description: IC SWITCH DUAL SPDT 10WQFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 300mOhm
-3db Bandwidth: 17MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 75pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH DUAL SPDT 10WQFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 300mOhm
-3db Bandwidth: 17MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 75pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.09 EUR |
10+ | 1.88 EUR |
25+ | 1.78 EUR |
100+ | 1.46 EUR |
250+ | 1.37 EUR |
500+ | 1.21 EUR |
1000+ | 0.95 EUR |
NLAS7222AMTR2G |
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Hersteller: onsemi
Description: IC USB SWITCH DPDT 10WQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 700MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
Description: IC USB SWITCH DPDT 10WQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 700MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
auf Bestellung 1174 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.78 EUR |
12+ | 1.58 EUR |
25+ | 1.5 EUR |
100+ | 1.15 EUR |
250+ | 1.02 EUR |
500+ | 0.97 EUR |
1000+ | 0.75 EUR |
NLASB3157MTR2G |
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Hersteller: onsemi
Description: IC SWITCH SPDT X 1 7OHM 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 7Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-WDFN (1.2x1)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 7OHM 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 7Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-WDFN (1.2x1)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
NLAST4051DTR2G |
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Hersteller: onsemi
Description: IC MUX 8:1 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 95MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1
Description: IC MUX 8:1 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 95MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 2198 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.55 EUR |
13+ | 1.39 EUR |
25+ | 1.32 EUR |
100+ | 1.02 EUR |
250+ | 0.9 EUR |
500+ | 0.85 EUR |
1000+ | 0.66 EUR |
NLAST4599DTT1G |
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Hersteller: onsemi
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
27+ | 0.66 EUR |
30+ | 0.6 EUR |
100+ | 0.41 EUR |
250+ | 0.34 EUR |
NLSF595DTR2G |
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Hersteller: onsemi
Description: IC LED DRVR LINEAR 12MA 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-TSSOP
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRVR LINEAR 12MA 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-TSSOP
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 8835 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.87 EUR |
11+ | 1.66 EUR |
25+ | 1.58 EUR |
100+ | 1.21 EUR |
250+ | 1.07 EUR |
500+ | 1.02 EUR |
1000+ | 0.79 EUR |
NLSF595MNR2G |
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Hersteller: onsemi
Description: IC LED DRIVER LINEAR 12MA 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRIVER LINEAR 12MA 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.36 EUR |
NSBC115EDXV6T1G |
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Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-563
auf Bestellung 196000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
38+ | 0.47 EUR |
100+ | 0.24 EUR |
500+ | 0.19 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
NSR0320MW2T3G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
auf Bestellung 46125 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
59+ | 0.3 EUR |
121+ | 0.15 EUR |
500+ | 0.12 EUR |
1000+ | 0.085 EUR |
2000+ | 0.073 EUR |
5000+ | 0.068 EUR |
NSR30CM3T5G |
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Hersteller: onsemi
Description: DIODE ARR SCHOT 30V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 59719 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
36+ | 0.5 EUR |
100+ | 0.25 EUR |
500+ | 0.21 EUR |
1000+ | 0.15 EUR |
2000+ | 0.13 EUR |
NSS20300MR6T1G |
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Hersteller: onsemi
Description: TRANS PNP 20V 3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 545 mW
Description: TRANS PNP 20V 3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 545 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.9 EUR |
23+ | 0.78 EUR |
100+ | 0.58 EUR |
500+ | 0.45 EUR |
1000+ | 0.35 EUR |
NSS30100LT1G |
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Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
auf Bestellung 272679 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
34+ | 0.53 EUR |
100+ | 0.32 EUR |
500+ | 0.29 EUR |
1000+ | 0.2 EUR |
NSS30101LT1G |
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Hersteller: onsemi
Description: TRANS NPN 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Description: TRANS NPN 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
auf Bestellung 10972 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
33+ | 0.54 EUR |
100+ | 0.32 EUR |
500+ | 0.3 EUR |
1000+ | 0.2 EUR |
NST30010MXV6T1G |
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Hersteller: onsemi
Description: TRANS 2PNP 30V 0.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Description: TRANS 2PNP 30V 0.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
auf Bestellung 6056 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.21 EUR |
17+ | 1.06 EUR |
100+ | 0.73 EUR |
500+ | 0.61 EUR |
1000+ | 0.52 EUR |
2000+ | 0.46 EUR |
NST3904DXV6T1G |
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Hersteller: onsemi
Description: TRANS 2NPN 40V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Part Status: Active
Description: TRANS 2NPN 40V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
36+ | 0.49 EUR |
100+ | 0.25 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
2000+ | 0.15 EUR |
NST3946DXV6T1G |
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Hersteller: onsemi
Description: TRANS NPN/PNP 40V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz, 250MHz
Supplier Device Package: SOT-563
Part Status: Active
Description: TRANS NPN/PNP 40V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz, 250MHz
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
34+ | 0.53 EUR |
100+ | 0.27 EUR |
500+ | 0.24 EUR |
1000+ | 0.18 EUR |
2000+ | 0.17 EUR |
NST489AMT1G |
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Hersteller: onsemi
Description: TRANS NPN 30V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
Description: TRANS NPN 30V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
auf Bestellung 60099 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.04 EUR |
20+ | 0.89 EUR |
100+ | 0.62 EUR |
500+ | 0.48 EUR |
1000+ | 0.39 EUR |
NTB60N06LT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V
Produkt ist nicht verfügbar
NTB60N06T4G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Produkt ist nicht verfügbar
NTB75N06T4G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Produkt ist nicht verfügbar
NTD14N03RT4G | ![]() |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
Description: MOSFET N-CH 25V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
auf Bestellung 10454 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.32 EUR |
10+ | 1.91 EUR |
100+ | 1.48 EUR |
500+ | 1.26 EUR |
1000+ | 1.02 EUR |
NTD20N06T4G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
auf Bestellung 5475 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.43 EUR |
10+ | 2.01 EUR |
100+ | 1.6 EUR |
500+ | 1.35 EUR |
1000+ | 1.15 EUR |
NTD24N06T4G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
NTD3055-150T4G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)NTD3055L170T4G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Produkt ist nicht verfügbar
NTD40N03RT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Produkt ist nicht verfügbar
NTD4302T4G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 8.4A/68A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Description: MOSFET N-CH 30V 8.4A/68A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Produkt ist nicht verfügbar
NTD4809NHT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 9.6A/58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
Description: MOSFET N-CH 30V 9.6A/58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
Produkt ist nicht verfügbar
NTD70N03RT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 10A/32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V
Description: MOSFET N-CH 25V 10A/32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V
Produkt ist nicht verfügbar
NTD78N03T4G |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 11.4A/78A DPAK
Description: MOSFET N-CH 25V 11.4A/78A DPAK
Produkt ist nicht verfügbar
NTD85N02RT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 24V 12A/85A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
Description: MOSFET N-CH 24V 12A/85A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
Produkt ist nicht verfügbar
NTF3055L108T3G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
NTF5P03T3G |
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Hersteller: onsemi
Description: MOSFET P-CH 30V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Description: MOSFET P-CH 30V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
auf Bestellung 15471 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.58 EUR |
14+ | 1.29 EUR |
100+ | 1 EUR |
500+ | 0.85 EUR |
1000+ | 0.69 EUR |
2000+ | 0.65 EUR |
NTF6P02T3G |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Power Dissipation (Max): 8.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
Description: MOSFET P-CH 20V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Power Dissipation (Max): 8.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
auf Bestellung 36745 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.2 EUR |
10+ | 1.81 EUR |
100+ | 1.41 EUR |
500+ | 1.19 EUR |
1000+ | 0.97 EUR |
2000+ | 0.91 EUR |
NTGS3130NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 4.23A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Description: MOSFET N-CH 20V 4.23A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
auf Bestellung 16905 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.53 EUR |
13+ | 1.36 EUR |
100+ | 1.04 EUR |
500+ | 0.82 EUR |
1000+ | 0.66 EUR |
NTHC5513T1G |
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Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Last Time Buy
Description: MOSFET N/P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Last Time Buy
Produkt ist nicht verfügbar
NTHD2102PT1G |
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Hersteller: onsemi
Description: MOSFET 2P-CH 8V 3.4A CHIPFET
Description: MOSFET 2P-CH 8V 3.4A CHIPFET
Produkt ist nicht verfügbar
NTHD3102CT1G |
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Hersteller: onsemi
Description: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Description: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
auf Bestellung 66005 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.71 EUR |
13+ | 1.39 EUR |
100+ | 1.08 EUR |
500+ | 0.92 EUR |
1000+ | 0.75 EUR |
NTHD4102PT1G |
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Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
auf Bestellung 24338 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.6 EUR |
14+ | 1.32 EUR |
100+ | 1.03 EUR |
500+ | 0.87 EUR |
1000+ | 0.71 EUR |
NTHD4401PT1G |
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Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Produkt ist nicht verfügbar
NTHD4P02FT1G |
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET P-CH 20V 2.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 2924 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.68 EUR |
10+ | 2.19 EUR |
100+ | 1.7 EUR |
500+ | 1.44 EUR |
1000+ | 1.17 EUR |
NTHS4101PT1G |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
auf Bestellung 8830 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.67 EUR |
13+ | 1.37 EUR |
100+ | 1.07 EUR |
500+ | 0.91 EUR |
1000+ | 0.74 EUR |