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1N4531,143 NEXPERIA 1N4531_2.pdf Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.2A
Max. load current: 0.45A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 1A
Case: DO34
Max. forward voltage: 1V
Power dissipation: 0.5W
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
74LVC138APW,118 74LVC138APW,118 NEXPERIA 74LVC138APW,118.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer,inverting; SMD
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Supply voltage: 1.2...3.6V DC
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer; inverting
Family: LVC
Type of integrated circuit: digital
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: reel; tape
auf Bestellung 1697 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
162+ 0.44 EUR
174+ 0.41 EUR
194+ 0.37 EUR
336+ 0.21 EUR
358+ 0.2 EUR
Mindestbestellmenge: 148
74LVC14ABZZ NEXPERIA 74LVC14A.pdf Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 6; CMOS; SMD; DHXQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Kind of gate: NOT
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: DHXQFN14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Produkt ist nicht verfügbar
PTVS36VS1UR,115 PTVS36VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 42.1V; 6.9A; unidirectional; SOD123W; max.150°C
Mounting: SMD
Operating temperature: max. 150°C
Breakdown voltage: 42.1V
Leakage current: 1nA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Case: SOD123W
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Max. forward impulse current: 6.9A
auf Bestellung 4346 Stücke:
Lieferzeit 14-21 Tag (e)
188+0.38 EUR
338+ 0.21 EUR
376+ 0.19 EUR
446+ 0.16 EUR
472+ 0.15 EUR
Mindestbestellmenge: 188
PTVS36VS1UTR,115 PTVS36VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 42.1V; 6.9A; unidirectional; SOD123W; max.185°C
Mounting: SMD
Operating temperature: max. 185°C
Breakdown voltage: 42.1V
Leakage current: 1nA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Case: SOD123W
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Max. forward impulse current: 6.9A
Produkt ist nicht verfügbar
PTVS30VP1UP,115 PTVS30VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 35.1V; 12.4A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 828 Stücke:
Lieferzeit 14-21 Tag (e)
180+0.4 EUR
254+ 0.28 EUR
343+ 0.21 EUR
362+ 0.2 EUR
Mindestbestellmenge: 180
PTVS30VP1UTP,115 PTVS30VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 35.1V; 12.4A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
PTVS30VS1UR,115 PTVS30VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 35.1V; 8.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2771 Stücke:
Lieferzeit 14-21 Tag (e)
174+0.41 EUR
334+ 0.21 EUR
371+ 0.19 EUR
486+ 0.15 EUR
514+ 0.14 EUR
Mindestbestellmenge: 174
PTVS30VS1UTR,115 PTVS30VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 35.1V; 8.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS33VP1UP,115 PTVS33VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 38.7V; 11.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Breakdown voltage: 38.7V
Max. forward impulse current: 11.3A
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD128F
Max. off-state voltage: 33V
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS33VP1UTP,115 PTVS33VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 38.7V; 11.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Breakdown voltage: 38.7V
Max. forward impulse current: 11.3A
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD128F
Max. off-state voltage: 33V
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS33VS1UR,115 PTVS33VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 38.7V; 7.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Breakdown voltage: 38.7V
Max. forward impulse current: 7.5A
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 33V
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 1756 Stücke:
Lieferzeit 14-21 Tag (e)
182+0.39 EUR
327+ 0.22 EUR
360+ 0.2 EUR
463+ 0.15 EUR
Mindestbestellmenge: 182
PTVS33VS1UTR,115 PTVS33VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 38.7V; 7.5A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Breakdown voltage: 38.7V
Max. forward impulse current: 7.5A
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 33V
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS3V3P1UP,115 PTVS3V3P1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 5.6V; 75A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 150°C
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
160+0.45 EUR
225+ 0.32 EUR
330+ 0.22 EUR
349+ 0.21 EUR
Mindestbestellmenge: 160
PTVS3V3P1UTP,115 PTVS3V3P1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 5.6V; 75A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 185°C
auf Bestellung 1584 Stücke:
Lieferzeit 14-21 Tag (e)
175+0.41 EUR
246+ 0.29 EUR
340+ 0.21 EUR
359+ 0.2 EUR
Mindestbestellmenge: 175
PTVS3V3S1UTR,115 PTVS3V3S1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 5.6V; 43.8A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 43.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 185°C
auf Bestellung 1461 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.38 EUR
323+ 0.22 EUR
358+ 0.2 EUR
470+ 0.15 EUR
497+ 0.14 EUR
Mindestbestellmenge: 186
PTVS10VP1UP,115 PTVS10VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
228+ 0.31 EUR
318+ 0.23 EUR
336+ 0.21 EUR
Mindestbestellmenge: 152
PTVS10VP1UTP,115 PTVS10VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS10VS1UR,115 PTVS10VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS10VS1UTR,115 PTVS10VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS10VU1UPAZ PTVS10VU1UPAZ NEXPERIA PTVSXU1UPA_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 11.7V; 148A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 148A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
PTVS11VP1UP,115 PTVS11VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12.85V; 33A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 1092 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
268+ 0.27 EUR
372+ 0.19 EUR
393+ 0.18 EUR
Mindestbestellmenge: 186
PTVS11VS1UR,115 PTVS11VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 564 Stücke:
Lieferzeit 14-21 Tag (e)
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
440+ 0.16 EUR
466+ 0.15 EUR
Mindestbestellmenge: 198
PTVS11VS1UTR,115 PTVS11VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS12VP1UP,115 PTVS12VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 2747 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
236+ 0.3 EUR
300+ 0.24 EUR
317+ 0.23 EUR
Mindestbestellmenge: 167
PTVS12VS1UR,115 PTVS12VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
338+ 0.21 EUR
374+ 0.19 EUR
Mindestbestellmenge: 186
PTVS12VS1UTR,115 PTVS12VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS12VU1UPAZ NEXPERIA PTVSXU1UPA_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 13.3÷14.7V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
PTVS14VP1UP,115 PTVS14VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS14VP1UTP,115 PTVS14VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS14VS1UR,115 PTVS14VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
198+0.36 EUR
358+ 0.2 EUR
397+ 0.18 EUR
491+ 0.15 EUR
519+ 0.14 EUR
Mindestbestellmenge: 198
PTVS14VS1UTR,115 PTVS14VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS15VS1UR,115 PTVS15VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 1964 Stücke:
Lieferzeit 14-21 Tag (e)
188+0.38 EUR
323+ 0.22 EUR
365+ 0.2 EUR
471+ 0.15 EUR
499+ 0.14 EUR
Mindestbestellmenge: 188
PTVS15VS1UTR,115 PTVS15VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 2130 Stücke:
Lieferzeit 14-21 Tag (e)
195+0.37 EUR
343+ 0.21 EUR
382+ 0.19 EUR
446+ 0.16 EUR
471+ 0.15 EUR
Mindestbestellmenge: 195
PTVS15VU1UPAZ NEXPERIA PTVSXU1UPA_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 16.7÷18.5V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
PTVS16VP1UP,115 PTVS16VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18.75V; 23.1A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
171+0.42 EUR
239+ 0.3 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 171
PTVS16VS1UR,115 PTVS16VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
PTVS16VS1UTR,115 PTVS16VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)
203+0.35 EUR
338+ 0.21 EUR
374+ 0.19 EUR
442+ 0.16 EUR
467+ 0.15 EUR
Mindestbestellmenge: 203
PTVS17VP1UP,115 PTVS17VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS17VP1UTP,115 PTVS17VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS17VS1UR,115 PTVS17VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 1610 Stücke:
Lieferzeit 14-21 Tag (e)
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
486+ 0.15 EUR
514+ 0.14 EUR
Mindestbestellmenge: 198
PTVS18VP1UP,115 PTVS18VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS18VP1UTP,115 PTVS18VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS18VS1UR,115 PTVS18VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS18VS1UTR,115 PTVS18VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS18VU1UPAZ PTVS18VU1UPAZ NEXPERIA PTVS18VU1UPA.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 21V; 97A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 97A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 1µA
Produkt ist nicht verfügbar
PTVS20VP1UP,115 PTVS20VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS20VP1UTP,115 PTVS20VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS20VS1UR,115 PTVS20VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2524 Stücke:
Lieferzeit 14-21 Tag (e)
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
491+ 0.15 EUR
519+ 0.14 EUR
Mindestbestellmenge: 198
PTVS20VS1UTR,115 PTVS20VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS22VP1UP,115 PTVS22VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 25.6V; 16.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 1205 Stücke:
Lieferzeit 14-21 Tag (e)
191+0.38 EUR
268+ 0.27 EUR
372+ 0.19 EUR
393+ 0.18 EUR
Mindestbestellmenge: 191
PTVS22VS1UR,115 PTVS22VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 25.6V; 11.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PMV100XPEAR PMV100XPEAR NEXPERIA PMV100XPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -10A
Case: SOT23; TO236AB
On-state resistance: 187mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMV130ENEAR PMV130ENEAR NEXPERIA PMV130ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.5A
Pulsed drain current: 8A
Case: SOT23; TO236AB
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
385+ 0.19 EUR
421+ 0.17 EUR
Mindestbestellmenge: 334
PMV27UPEAR PMV27UPEAR NEXPERIA PMV27UPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMV27UPER PMV27UPER NEXPERIA PMV27UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMV65ENEAR PMV65ENEAR NEXPERIA PMV65ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.7A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Produkt ist nicht verfügbar
PMV65UNER PMV65UNER NEXPERIA PMV65UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 13725 Stücke:
Lieferzeit 14-21 Tag (e)
310+0.23 EUR
440+ 0.16 EUR
490+ 0.15 EUR
570+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 310
PMDXB550UNEZ NEXPERIA PMDXB550UNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMDXB950UPEZ NEXPERIA PMDXB950UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
1N4531,143 1N4531_2.pdf
Hersteller: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.2A
Max. load current: 0.45A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 1A
Case: DO34
Max. forward voltage: 1V
Power dissipation: 0.5W
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
74LVC138APW,118 74LVC138APW,118.pdf
74LVC138APW,118
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer,inverting; SMD
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Supply voltage: 1.2...3.6V DC
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer; inverting
Family: LVC
Type of integrated circuit: digital
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: reel; tape
auf Bestellung 1697 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
148+0.49 EUR
162+ 0.44 EUR
174+ 0.41 EUR
194+ 0.37 EUR
336+ 0.21 EUR
358+ 0.2 EUR
Mindestbestellmenge: 148
74LVC14ABZZ 74LVC14A.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 6; CMOS; SMD; DHXQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Kind of gate: NOT
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: DHXQFN14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Produkt ist nicht verfügbar
PTVS36VS1UR,115 PTVSXS1UR_SER.pdf
PTVS36VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 42.1V; 6.9A; unidirectional; SOD123W; max.150°C
Mounting: SMD
Operating temperature: max. 150°C
Breakdown voltage: 42.1V
Leakage current: 1nA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Case: SOD123W
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Max. forward impulse current: 6.9A
auf Bestellung 4346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
188+0.38 EUR
338+ 0.21 EUR
376+ 0.19 EUR
446+ 0.16 EUR
472+ 0.15 EUR
Mindestbestellmenge: 188
PTVS36VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS36VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 42.1V; 6.9A; unidirectional; SOD123W; max.185°C
Mounting: SMD
Operating temperature: max. 185°C
Breakdown voltage: 42.1V
Leakage current: 1nA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Case: SOD123W
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Max. forward impulse current: 6.9A
Produkt ist nicht verfügbar
PTVS30VP1UP,115 PTVSXP1UP_SER.pdf
PTVS30VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 35.1V; 12.4A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 828 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
180+0.4 EUR
254+ 0.28 EUR
343+ 0.21 EUR
362+ 0.2 EUR
Mindestbestellmenge: 180
PTVS30VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS30VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 35.1V; 12.4A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+17.88 EUR
Mindestbestellmenge: 4
PTVS30VS1UR,115 PTVSXS1UR_SER.pdf
PTVS30VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 35.1V; 8.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2771 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
174+0.41 EUR
334+ 0.21 EUR
371+ 0.19 EUR
486+ 0.15 EUR
514+ 0.14 EUR
Mindestbestellmenge: 174
PTVS30VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS30VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 35.1V; 8.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS33VP1UP,115 PTVSXP1UP_SER.pdf
PTVS33VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 38.7V; 11.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Breakdown voltage: 38.7V
Max. forward impulse current: 11.3A
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD128F
Max. off-state voltage: 33V
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS33VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS33VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 38.7V; 11.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Breakdown voltage: 38.7V
Max. forward impulse current: 11.3A
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD128F
Max. off-state voltage: 33V
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS33VS1UR,115 PTVSXS1UR_SER.pdf
PTVS33VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 38.7V; 7.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Breakdown voltage: 38.7V
Max. forward impulse current: 7.5A
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 33V
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 1756 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
182+0.39 EUR
327+ 0.22 EUR
360+ 0.2 EUR
463+ 0.15 EUR
Mindestbestellmenge: 182
PTVS33VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS33VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 38.7V; 7.5A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Breakdown voltage: 38.7V
Max. forward impulse current: 7.5A
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 33V
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS3V3P1UP,115 PTVSXP1UP_SER.pdf
PTVS3V3P1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 5.6V; 75A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 150°C
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
160+0.45 EUR
225+ 0.32 EUR
330+ 0.22 EUR
349+ 0.21 EUR
Mindestbestellmenge: 160
PTVS3V3P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS3V3P1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 5.6V; 75A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 185°C
auf Bestellung 1584 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
175+0.41 EUR
246+ 0.29 EUR
340+ 0.21 EUR
359+ 0.2 EUR
Mindestbestellmenge: 175
PTVS3V3S1UTR,115 PTVSXS1UTR_SER.pdf
PTVS3V3S1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 5.6V; 43.8A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 43.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 185°C
auf Bestellung 1461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.38 EUR
323+ 0.22 EUR
358+ 0.2 EUR
470+ 0.15 EUR
497+ 0.14 EUR
Mindestbestellmenge: 186
PTVS10VP1UP,115 PTVSXP1UP_SER.pdf
PTVS10VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
228+ 0.31 EUR
318+ 0.23 EUR
336+ 0.21 EUR
Mindestbestellmenge: 152
PTVS10VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS10VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS10VS1UR,115 PTVSXS1UR_SER.pdf
PTVS10VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS10VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS10VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS10VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS10VU1UPAZ
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 11.7V; 148A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 148A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
PTVS11VP1UP,115 PTVSXP1UP_SER.pdf
PTVS11VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12.85V; 33A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 1092 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
268+ 0.27 EUR
372+ 0.19 EUR
393+ 0.18 EUR
Mindestbestellmenge: 186
PTVS11VS1UR,115 PTVSXS1UR_SER.pdf
PTVS11VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 564 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
440+ 0.16 EUR
466+ 0.15 EUR
Mindestbestellmenge: 198
PTVS11VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS11VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS12VP1UP,115 PTVSXP1UP_SER.pdf
PTVS12VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 2747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
236+ 0.3 EUR
300+ 0.24 EUR
317+ 0.23 EUR
Mindestbestellmenge: 167
PTVS12VS1UR,115 PTVSXS1UR_SER.pdf
PTVS12VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
338+ 0.21 EUR
374+ 0.19 EUR
Mindestbestellmenge: 186
PTVS12VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS12VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS12VU1UPAZ PTVSXU1UPA_SER.pdf
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 13.3÷14.7V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
PTVS14VP1UP,115 PTVSXP1UP_SER.pdf
PTVS14VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS14VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS14VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS14VS1UR,115 PTVSXS1UR_SER.pdf
PTVS14VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
358+ 0.2 EUR
397+ 0.18 EUR
491+ 0.15 EUR
519+ 0.14 EUR
Mindestbestellmenge: 198
PTVS14VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS14VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS15VS1UR,115 PTVSXS1UR_SER.pdf
PTVS15VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 1964 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
188+0.38 EUR
323+ 0.22 EUR
365+ 0.2 EUR
471+ 0.15 EUR
499+ 0.14 EUR
Mindestbestellmenge: 188
PTVS15VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS15VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 2130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
195+0.37 EUR
343+ 0.21 EUR
382+ 0.19 EUR
446+ 0.16 EUR
471+ 0.15 EUR
Mindestbestellmenge: 195
PTVS15VU1UPAZ PTVSXU1UPA_SER.pdf
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 16.7÷18.5V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
PTVS16VP1UP,115 PTVSXP1UP_SER.pdf
PTVS16VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18.75V; 23.1A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
171+0.42 EUR
239+ 0.3 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 171
PTVS16VS1UR,115 PTVSXS1UR_SER.pdf
PTVS16VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+7.15 EUR
Mindestbestellmenge: 10
PTVS16VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS16VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
203+0.35 EUR
338+ 0.21 EUR
374+ 0.19 EUR
442+ 0.16 EUR
467+ 0.15 EUR
Mindestbestellmenge: 203
PTVS17VP1UP,115 PTVSXP1UP_SER.pdf
PTVS17VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS17VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS17VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS17VS1UR,115 PTVSXS1UR_SER.pdf
PTVS17VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 1610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
486+ 0.15 EUR
514+ 0.14 EUR
Mindestbestellmenge: 198
PTVS18VP1UP,115 PTVSXP1UP_SER.pdf
PTVS18VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS18VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS18VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS18VS1UR,115 PTVSXS1UR_SER.pdf
PTVS18VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS18VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS18VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS18VU1UPAZ PTVS18VU1UPA.pdf
PTVS18VU1UPAZ
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 21V; 97A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 97A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 1µA
Produkt ist nicht verfügbar
PTVS20VP1UP,115 PTVSXP1UP_SER.pdf
PTVS20VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS20VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS20VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS20VS1UR,115 PTVSXS1UR_SER.pdf
PTVS20VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
491+ 0.15 EUR
519+ 0.14 EUR
Mindestbestellmenge: 198
PTVS20VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS20VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS22VP1UP,115 PTVSXP1UP_SER.pdf
PTVS22VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 25.6V; 16.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 1205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
191+0.38 EUR
268+ 0.27 EUR
372+ 0.19 EUR
393+ 0.18 EUR
Mindestbestellmenge: 191
PTVS22VS1UR,115 PTVSXS1UR_SER.pdf
PTVS22VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 25.6V; 11.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PMV100XPEAR PMV100XPEA.pdf
PMV100XPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -10A
Case: SOT23; TO236AB
On-state resistance: 187mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMV130ENEAR PMV130ENEA.pdf
PMV130ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.5A
Pulsed drain current: 8A
Case: SOT23; TO236AB
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
334+0.21 EUR
385+ 0.19 EUR
421+ 0.17 EUR
Mindestbestellmenge: 334
PMV27UPEAR PMV27UPEA.pdf
PMV27UPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMV27UPER PMV27UPE.pdf
PMV27UPER
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMV65ENEAR PMV65ENEA.pdf
PMV65ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.7A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Produkt ist nicht verfügbar
PMV65UNER PMV65UNE.pdf
PMV65UNER
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 13725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
310+0.23 EUR
440+ 0.16 EUR
490+ 0.15 EUR
570+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 310
PMDXB550UNEZ PMDXB550UNE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMDXB950UPEZ PMDXB950UPE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
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