Produkte > WNS
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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WNs | auf Bestellung 145 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
WNS-032-0 | PEM | Mounting Fixings WELD NUT, STAINLESS | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS-0420-0 | PEM | Mounting Fixings WELD NUT, STAINLESS | auf Bestellung 189 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS-632-0 | PEM | Mounting Fixings WELD NUT, STAINLESS | auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS-832-0 | PEM | Mounting Fixings WELD NUT, STAINLESS | Produkt ist nicht verfügbar | |||||||||||||||||
WNS-SET-MFT | BESSEY | WNS-SET-MFT Vices and Clamps | auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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WNS14Q575-FC | auf Bestellung 325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
WNS20H100C | Ween | Dual power Schottky diode | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20H100C | WeEn Semiconductors | WeEn Semiconductors WNS20H100CQ/SOT78/STANDARD MARKING * HORIZONTAL, RAIL PACK, | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20H100CB | Ween | plastic single-ended surface-mounted package rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20H100CBJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 180A Max. forward voltage: 0.7V | auf Bestellung 810 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS20H100CBJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNS20H100CBJ/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD,REEL 13 | auf Bestellung 5770 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS20H100CBJ | Ween | WNS20H100CBJ/TO263/REEL 13\"" Q1/T1 *STANDARD MARK SMD,REEL 13 | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNS20H100CBJ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 5498 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS20H100CBJ | WeEn Semiconductor(Hong Kong)Co.,Limited | Dual Power Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20H100CBJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNS20H100CBJ - Schottky-Gleichrichterdiode, Zweifach, gemeinsame Kathode, TO-263 (D2PAK), 3 Pin(s) Bauform - Diode: TO-263 (D2PAK) Durchlassstoßstrom: 198 Durchlassspannung Vf max.: 750 Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - Durchlassspannung, max.: 750 Durchschnittlicher Durchlassstrom: 10 Wiederkehrende Spitzensperrspannung: 100 Durchlassstrom (mittlerer) If(AV): 10 Anzahl der Pins: 3 Produktpalette: - Spitzendurchlassstrom Ifsm, max.: 198 Betriebstemperatur, max.: 150 Periodische Sperrspannung Vrrm, max.: 100 SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1407 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNS20H100CBJ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS20H100CBJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 180A Max. forward voltage: 0.7V Anzahl je Verpackung: 1 Stücke | auf Bestellung 810 Stücke: Lieferzeit 7-14 Tag (e) |
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WNS20H100CBJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNS20H100CBJ - Schottky-Gleichrichterdiode, Zweifach, gemeinsame Kathode, TO-263 (D2PAK), 3 Pin(s) Bauform - Diode: TO-263 (D2PAK) Durchlassstoßstrom: 198 Durchlassspannung Vf max.: 750 Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - Durchlassspannung, max.: 750 Durchschnittlicher Durchlassstrom: 10 Wiederkehrende Spitzensperrspannung: 100 Durchlassstrom (mittlerer) If(AV): 10 Anzahl der Pins: 3 Produktpalette: - Spitzendurchlassstrom Ifsm, max.: 198 Betriebstemperatur, max.: 150 Periodische Sperrspannung Vrrm, max.: 100 SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1407 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNS20H100CQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNS20H100CQ - Schottky-Gleichrichterdiode, 100 V, 10 A, Zweifach, gemeinsame Kathode, TO-220AB, 3 Pin(s) tariffCode: 85411000 Bauform - Diode: TO-220AB Durchlassstoßstrom: 198A rohsCompliant: Y-EX Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - Durchlassspannung, max.: 750mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 100V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 150°C SVHC: Lead (23-Jan-2024) | auf Bestellung 1232 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNS20H100CQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 180A Max. forward voltage: 0.7V Anzahl je Verpackung: 1 Stücke | auf Bestellung 468 Stücke: Lieferzeit 7-14 Tag (e) |
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WNS20H100CQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 180A Max. forward voltage: 0.7V | auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS20H100CQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNS20H100CQ/SOT78/STANDARD MARKING * HORIZONTAL, RAIL PACK, | auf Bestellung 4811 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS20H100CQ | Ween | WNS20H100CQ/SOT78/STANDARD MARKING * HORIZONTAL, RAIL PACK, | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20H100CQ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 10A TO220E Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220E Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 9878 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS20S100CBJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 120A Max. forward voltage: 0.8V Anzahl je Verpackung: 1 Stücke | auf Bestellung 236 Stücke: Lieferzeit 7-14 Tag (e) |
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WNS20S100CBJ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 7054 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS20S100CBJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNS20S100CBJ - Schottky-Gleichrichterdiode, 100 V, 10 A, Zweifach, gemeinsame Kathode, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85411000 Bauform - Diode: TO-263 (D2PAK) Durchlassstoßstrom: 132A rohsCompliant: Y-EX Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - Durchlassspannung, max.: 950mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 100V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 150°C SVHC: Lead (23-Jan-2024) | auf Bestellung 1013 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNS20S100CBJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 120A Max. forward voltage: 0.8V | auf Bestellung 236 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS20S100CBJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNS20S100CBJ/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD,REEL 13 | auf Bestellung 6411 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS20S100CBJ | Ween | Dual Power Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20S100CBJ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 6400 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS20S100CBJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNS20S100CBJ - Schottky-Gleichrichterdiode, 100 V, 10 A, Zweifach, gemeinsame Kathode, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85411000 Bauform - Diode: TO-263 (D2PAK) Durchlassstoßstrom: 132A rohsCompliant: Y-EX Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - Durchlassspannung, max.: 950mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 100V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 150°C SVHC: Lead (23-Jan-2024) | auf Bestellung 1013 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNS20S100CQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNS20S100CQ/SIL3P/STANDARD MARKING HORIZONTAL, RAIL PACK, | auf Bestellung 3858 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS20S100CQ | Ween | Dual Power Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20S100CQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 120A Max. forward voltage: 0.8V Anzahl je Verpackung: 1 Stücke | auf Bestellung 465 Stücke: Lieferzeit 7-14 Tag (e) |
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WNS20S100CQ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 10A TO220E Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220E Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 4911 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS20S100CQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNS20S100CQ - Schottky-Gleichrichterdiode, 100 V, 10 A, Zweifach, gemeinsame Kathode, TO-220AB, 3 Pin(s) tariffCode: 85411000 Bauform - Diode: TO-220AB Durchlassstoßstrom: 132A rohsCompliant: Y-EX Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - Durchlassspannung, max.: 950mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 100V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 150°C SVHC: Lead (23-Jan-2024) | auf Bestellung 4448 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNS20S100CQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 120A Max. forward voltage: 0.8V | auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS20S100CXQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 120A Max. forward voltage: 0.95V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20S100CXQ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 10A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20S100CXQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 120A Max. forward voltage: 0.95V | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20S100CXQ | WeEn Semiconductors | Schottky Diodes & Rectifiers Dual Common Cathode Power Schottky | Produkt ist nicht verfügbar | |||||||||||||||||
WNS20S100CXQ | Ween | WNS20S100CX/TO-220F/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNS30H100C | Ween | plastic single-ended surface-mounted package rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
WNS30H100CB | Ween | plastic single-ended surface-mounted package rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
WNS30H100CBJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 15Ax2; D2PAK; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.67V Max. load current: 30A Max. off-state voltage: 100V Case: D2PAK Semiconductor structure: common cathode; double Max. forward impulse current: 330A Load current: 15A x2 | auf Bestellung 288 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS30H100CBJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNS30H100CBJ/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD,REEL 13 | auf Bestellung 5600 Stücke: Lieferzeit 131-135 Tag (e) |
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WNS30H100CBJ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 15A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 5562 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS30H100CBJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 15Ax2; D2PAK; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.67V Max. load current: 30A Max. off-state voltage: 100V Case: D2PAK Semiconductor structure: common cathode; double Max. forward impulse current: 330A Load current: 15A x2 Anzahl je Verpackung: 1 Stücke | auf Bestellung 288 Stücke: Lieferzeit 7-14 Tag (e) |
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WNS30H100CBJ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS30H100CQ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 15A TO220E Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220E Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 12662 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS30H100CQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 0.67V Max. load current: 30A Max. off-state voltage: 100V Case: TO220AB Semiconductor structure: common cathode; double Max. forward impulse current: 330A Load current: 15A x2 Anzahl je Verpackung: 1 Stücke | auf Bestellung 1271 Stücke: Lieferzeit 7-14 Tag (e) |
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WNS30H100CQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 0.67V Max. load current: 30A Max. off-state voltage: 100V Case: TO220AB Semiconductor structure: common cathode; double Max. forward impulse current: 330A Load current: 15A x2 | auf Bestellung 1271 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS30H100CQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNS30H100CQ/SOT78/STANDARD MARKING * HORIZONTAL, RAIL PACK, | auf Bestellung 7504 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS32702 | auf Bestellung 481 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
WNS40100CQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO220AB Kind of package: tube Max. forward impulse current: 330A Max. forward voltage: 0.64V | auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS40100CQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNS40100C/TO220/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 3155 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS40100CQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO220AB Kind of package: tube Max. forward impulse current: 330A Max. forward voltage: 0.64V Anzahl je Verpackung: 1 Stücke | auf Bestellung 239 Stücke: Lieferzeit 7-14 Tag (e) |
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WNS40100CQ | WeEn Semiconductors | Description: POWER SCHOTTKY DIODES Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220E Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 14995 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS40100CQ Produktcode: 195265 | Dioden, Diodenbrücken, Zenerdioden > Schottkydioden | Produkt ist nicht verfügbar | ||||||||||||||||||
WNS40H100C | Ween | plastic single-ended surface-mounted package rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100C | WeEn Semiconductors | WeEn Semiconductors WNS40H100CQ/SOT78/STANDARD MARKING * HORIZONTAL, RAIL PACK, | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100C,127 | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 20A TO220E Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220E Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100C,127 | WeEn Semiconductors | Schottky Diodes & Rectifiers WNS40H100C/SIL3P/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100CB | WeEn Semiconductor(Hong Kong)Co.,Limited | plastic single-ended surface-mounted package rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100CB | Ween | plastic single-ended surface-mounted package rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100CBJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNS40H100CBJ - Schottky-Gleichrichterdiode, 100 V, 20 A, Zweifach, gemeinsame Kathode, TO-263 (D2PAK), 3 Pin(s) SVHC: No SVHC (15-Jan-2018) | auf Bestellung 912 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNS40H100CBJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Max. forward voltage: 0.68V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 380A Anzahl je Verpackung: 1 Stücke | auf Bestellung 430 Stücke: Lieferzeit 7-14 Tag (e) |
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WNS40H100CBJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNS40H100CBJ/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD,REEL 13 | auf Bestellung 7310 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS40H100CBJ | WeEn Semiconductor(Hong Kong)Co.,Limited | Dual Power Schottky Diode | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS40H100CBJ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 5652 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS40H100CBJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNS40H100CBJ - Schottky-Gleichrichterdiode, 100 V, 20 A, Zweifach, gemeinsame Kathode, TO-263 (D2PAK), 3 Pin(s) Bauform - Diode: TO-263 (D2PAK) Durchlassstoßstrom: 418 Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - Durchlassspannung, max.: 710 Durchschnittlicher Durchlassstrom: 20 Wiederkehrende Spitzensperrspannung: 100 Anzahl der Pins: 3 Produktpalette: - Betriebstemperatur, max.: 150 SVHC: No SVHC (15-Jan-2018) | auf Bestellung 912 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNS40H100CBJ Produktcode: 203131 | Dioden, Diodenbrücken, Zenerdioden > Schottkydioden | Produkt ist nicht verfügbar | ||||||||||||||||||
WNS40H100CBJ | Ween | WNS40H100CBJ/TO263/REEL 13\"" Q1/T1 *STANDARD MARK SMD,REEL 13 | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100CBJ | WeEn Semiconductor(Hong Kong)Co.,Limited | Dual Power Schottky Diode | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS40H100CBJ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 5600 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS40H100CBJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Max. forward voltage: 0.68V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 380A | auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS40H100CGQ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 20A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-262 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100CGQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: I2PAK Kind of package: tube Max. forward impulse current: 380A Max. forward voltage: 0.68V | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100CGQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: I2PAK Kind of package: tube Max. forward impulse current: 380A Max. forward voltage: 0.68V Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100CGQ | WeEn Semiconductors | Schottky Diodes & Rectifiers Dual Common Cathode Power Schottky | Produkt ist nicht verfügbar | |||||||||||||||||
WNS40H100CQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 380A Max. forward voltage: 0.68V | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS40H100CQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 380A Max. forward voltage: 0.68V Anzahl je Verpackung: 1 Stücke | auf Bestellung 970 Stücke: Lieferzeit 7-14 Tag (e) |
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WNS40H100CQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNS40H100CQ/SOT78/STANDARD MARKING HORIZONTAL, RAIL PACK, | auf Bestellung 2157 Stücke: Lieferzeit 10-14 Tag (e) |
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WNS40H100CQ | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 20A TO220E Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220E Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V | auf Bestellung 2868 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC010203 | American Power Conversion | Data Center Operation Floor Layout Creation | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC010210 | American Power Conversion | Data Center Operation Labeling Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC010212 | American Power Conversion | Data Center Operation Installation | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC010213 | American Power Conversion | Data Center Operation Additional Module Installation | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC010214 | American Power Conversion | Data Center Operation IT Optimize or Power Control Configuration | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC010215 | American Power Conversion | Data Center Expert Standard Support Software Contract | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC010216 | American Power Conversion | StruxureWare Portal Configuration | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC010402 | American Power Conversion | Data Center Capacity Post Configuration Review | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC0112 | American Power Conversion | IT 5 Rack Management Solution | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC0112 | Schneider Electric | Racks & Rack Cabinets IT 5 Rack Management Solution | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC021200Q | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
WNSC021200Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC021200/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 2128 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC021200Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Max. load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 26A Max. forward voltage: 1.4V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC021200Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC021200Q - SiC-Schottky-Diode, Einfach, 1.2 kV, 2 A, 10 nC, TO-220AC Kapazitive Gesamtladung: 10 Durchschnittlicher Durchlassstrom: 2 Anzahl der Pins: 2 Pins Bauform - Diode: TO-220AC Diodenkonfiguration: Einfach Qualifikation: - Wiederkehrende Spitzensperrspannung: 1.2 Produktpalette: - SVHC: No SVHC (25-Jun-2020) | auf Bestellung 860 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC021200Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Max. load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 26A Max. forward voltage: 1.4V Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC04650T6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC04650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | auf Bestellung 2862 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC04650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 24A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC04650T6J | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC04650T6J - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 7 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 7nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2550 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC04650T6J | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | auf Bestellung 1930 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC04650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 24A Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC04650T6J | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC04650T6J | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC04650T6J - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 7 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 7nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2550 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC051200Q | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC051200Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 65A Max. forward voltage: 1.4V Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC051200Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC051200Q - SiC-Schottky-Diode, Einfach, 1.2 kV, 5 A, 13 nC, TO-220AC tariffCode: 85411000 Bauform - Diode: TO-220AC Kapazitive Gesamtladung: 13nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 5A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.2kV Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 446 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC051200Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 65A Max. forward voltage: 1.4V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC06650T6J | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC06650T6J - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 9nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 6A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC06650T6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A 5DFN | auf Bestellung 2942 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC06650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 36A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC06650T6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A 5DFN | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC06650T6J | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC06650T6J - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 9nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 6A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC06650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 36A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC06650T6J | WeEn Semiconductors | SiC Schottky Diodes WNSC06650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | auf Bestellung 2763 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC08650T6J | WeEn Semiconductors | WNSC08650T6J SMD Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC08650T6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC08650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | auf Bestellung 2925 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC08650T6J | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | auf Bestellung 2876 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC08650T6J | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200CWQ | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 250pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Max. load current: 10A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 65A Max. forward voltage: 1.6V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200CWQ | Ween | Rectifier Diode Schottky SiC 1.2KV 10A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200CWQ | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky SiC 1.2KV 10A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200CWQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC101200CWQ - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 1.2 kV, 10 A, 12 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 12nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.2kV Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 223 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC101200CWQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC101200CW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Max. load current: 10A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 65A Max. forward voltage: 1.6V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC101200/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 1970 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC101200Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 20A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.4V Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200Q | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 510pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 110 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 20A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.4V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200Q | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky SiC 1.2KV 10A 2-Pin(2+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC101200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 20A Max. forward voltage: 1.4V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 110A Kind of package: tube Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200WQ | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
WNSC101200WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 20A Max. forward voltage: 1.4V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 110A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200WQ | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky SiC 1.2KV 10A 2-Pin(2+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC101200WQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC101200WQ - SiC-Schottky-Diode, Einfach, 1.2 kV, 10 A, 24 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 24nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.2kV Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 589 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC10650T6J | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC10650T6J - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 16 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 16nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2820 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC10650T6J | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC10650T6J - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 16 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 16nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2820 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC10650T6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC10650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | auf Bestellung 2926 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC10650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 50A Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC10650T6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC10650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 50A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC10650WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC10650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 1186 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC10650WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 50A Kind of package: tube Anzahl je Verpackung: 1200 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC10650WQ | WeEn Semiconductors | Description: DIODE SIL CARB 650V 10A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC10650WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 50A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC12650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 57A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC12650T6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 12A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V | auf Bestellung 2998 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC12650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 57A Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC12650T6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 12A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC12650TJ | Ween | Diode Schottky SiC 650V 12A 5-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC12650TJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC12650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC12650TJ | WeEn Semiconductor(Hong Kong)Co.,Limited | Diode Schottky SiC 650V 12A 5-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC12650WQ | WeEn Semiconductors | Description: DIODE SIL CARB 650V 12A TO247-2 | auf Bestellung 1197 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC12650WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC12650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 1181 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC12650WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 72A Kind of package: tube Anzahl je Verpackung: 1200 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC12650WQ | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC12650WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 72A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC12650WQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC12650WQ - SiC-Schottky-Diode, Einfach, 650 V, 12 A, 16 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 16nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 12A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 528 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC14 | Schneider Electric | Calibration, Warranties, & Service Plans EcoStruxure Optimization Services | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC16650CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 16A Max. forward impulse current: 48A Kind of package: tube Anzahl je Verpackung: 480 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC16650CWQ | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky SiC 650V 16A 3-Pin(3+Tab) TO-247N Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC16650CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 16A Max. forward impulse current: 48A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC16650CWQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC16650CWQ - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 650 V, 16 A, 19 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 19nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 16A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC16650CWQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC16650CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC16650CWQ | WeEn Semiconductors | Description: DIODE ARR SIC 650V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC201200CWQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC201200CW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 470 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC201200CWQ | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | auf Bestellung 476 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
WNSC201200CWQ | Ween | Rectifier Diode Schottky SiC 1.2KV 20A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC201200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Max. load current: 20A Type of diode: Schottky rectifying Max. forward impulse current: 110A Load current: 10A x2 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC201200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Max. load current: 20A Type of diode: Schottky rectifying Max. forward impulse current: 110A Load current: 10A x2 | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC201200CWQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC201200CWQ - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 1.2 kV, 20 A, 24 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 24nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 20A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.2kV Anzahl der Pins: 3 Pins Produktpalette: Fuse Kits productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC201200WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 40A Max. forward voltage: 1.4V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 220A Kind of package: tube Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC201200WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 40A Max. forward voltage: 1.4V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 220A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC201200WQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC201200WQ - SiC-Schottky-Diode, Einfach, 1.2 kV, 20 A, 52 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 52nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 20A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.2kV Anzahl der Pins: 2 Pins Produktpalette: Fuse Kits productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 576 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC201200WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC201200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 1144 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC201200WQ | Ween | Rectifier Diode Schottky SiC 1.2KV 20A 2-Pin(2+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC201200WQ | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 20A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1.02nF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 220 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC208006Q | Ween | WNSC20800/SOD59A/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D0212006Q | Ween | WNSC2D021200/SOD59A/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D0212006Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D021200/SOD59A/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D021200D6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D021200D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D021200D6J | WeEn Semiconductors | Description: WNSC2D021200D/TO252/REEL 13" Q1 Packaging: Tape & Reel (TR) Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 95pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D021200D6J | Ween | WNSC2D021200D/TO252/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D03650MBJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 3A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D03650MBJ | Ween | WNSC2D03650MB/SMB/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D03650MBJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D03650MB/SMB/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D03650MBJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 3A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 7812 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D04650DJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Max. forward impulse current: 24A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650DJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D04650D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650DJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 125pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D04650DJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Max. forward impulse current: 24A Kind of package: reel; tape Anzahl je Verpackung: 7500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650DJ | Ween | Rectifier Diode Schottky SiC 650V 4A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650DJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 125pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 5027 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D04650Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2.2V Max. load current: 8A Max. forward impulse current: 24A Kind of package: tube Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650Q | Ween | WNSC2D04650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 4A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 125pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D04650Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2.2V Max. load current: 8A Max. forward impulse current: 24A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D04650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 2876 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D04650TJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D04650TJ - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 7 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 7nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2984 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D04650TJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 24A Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650TJ | Ween | Diode Schottky SiC 650V 4A 5-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650TJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 4A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 125pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D04650TJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 24A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650TJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D04650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650TJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D04650TJ - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 7 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 7nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2984 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D04650TJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 4A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 125pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 10530 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D04650XQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D04650X/TO220F-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650XQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D04650XQ - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 6.5 nC, TO-220F tariffCode: 85411000 Bauform - Diode: TO-220F Kapazitive Gesamtladung: 6.5nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 342 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D04650XQ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 4A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 125pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 2892 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D04650XQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Max. forward impulse current: 20A Kind of package: tube Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D04650XQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Max. forward impulse current: 20A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D0512006Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D051200/SOD59A/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D0512006Q | Ween | Silicon Carbide Diode | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D0512006Q | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 5A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D051200D6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D051200D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D051200D6J | Ween | Silicon Carbide Diode | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D051200D6J | WeEn Semiconductors | Description: WNSC2D051200D/TO252/REEL 13" Q1 Packaging: Tape & Reel (TR) Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D051400D6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D051400D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650DJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D06650DJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 36A Load current: 6A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650DJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 36A Load current: 6A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650DJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D06650D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650DJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | auf Bestellung 12201 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D06650DJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D06650DJ - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, TO-252 (DPAK) tariffCode: 85411000 Bauform - Diode: TO-252 (DPAK) Kapazitive Gesamtladung: 9nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 6A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2315 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D06650DJ | Ween | Rectifier Diode Schottky SiC 650V 6A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D06650Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D06650Q - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, TO-220 tariffCode: 85411000 Bauform - Diode: TO-220 Kapazitive Gesamtladung: 9 Diodenmontage: Durchsteckmontage hazardous: false Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 6 euEccn: NLR Wiederkehrende Spitzensperrspannung: 650 Anzahl der Pins: 2 Pins Produktpalette: - Betriebstemperatur, max.: 175 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 2976 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D06650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D06650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D06650TJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | auf Bestellung 1974 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D06650TJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D06650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650TJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D06650TJ - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9.5 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 9.5nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 6A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2997 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D06650TJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 36A Load current: 6A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650TJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650TJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 36A Load current: 6A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650TJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D06650TJ - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9.5 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 9.5nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 6A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2997 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D06650XQ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650XQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D06650X/TO220F-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650XQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D06650XQ - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, TO-220F tariffCode: 85411000 Bauform - Diode: TO-220F Kapazitive Gesamtladung: 9nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 6A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 817 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D06650XQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Technology: SiC Case: TO220FP-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 30A Load current: 6A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650XQ | Ween | Rectifier Diode Schottky SiC 650V 6A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D06650XQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Technology: SiC Case: TO220FP-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 30A Load current: 6A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D08650DJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 48A Load current: 8A Anzahl je Verpackung: 7500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D08650DJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 48A Load current: 8A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D08650DJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | auf Bestellung 7478 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D08650DJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D08650DJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D08650D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D08650Q Produktcode: 203152 | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden | Produkt ist nicht verfügbar | ||||||||||||||||||
WNSC2D08650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D08650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D08650Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D08650Q - SiC-Schottky-Diode, Einfach, 650 V, 8 A, 13 nC, TO-220 tariffCode: 85411000 productTraceability: No Kapazitive Gesamtladung: 13nC rohsCompliant: NO Durchschnittlicher Durchlassstrom: 8A euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO Wiederkehrende Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C usEccn: EAR99 SVHC: Lead (23-Jan-2024) | auf Bestellung 2989 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D08650Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D08650TJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 8A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D08650TJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D08650TJ - SiC-Schottky-Diode, Einfach, 650 V, 8 A, 13 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 13nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 8A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2999 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D08650TJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 8A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D08650TJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 48A Load current: 8A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D08650TJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 48A Load current: 8A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D08650TJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D08650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D08650TJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D08650TJ - SiC-Schottky-Diode, Einfach, 650 V, 8 A, 13 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 13nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 8A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2999 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D1012006Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D101200/SOD59A/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D1012006Q | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 481pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200BT26J | Ween | WNSC2D101200BT2/TO263-2L/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200BT26J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D101200BT2/TO263-2L/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200CW6Q | WeEn Semiconductors | Description: DIODE ARR SIC 1200V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200D6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D101200D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200D6J | WeEn Semiconductors | Description: WNSC2D101200D/TO252/REEL 13" Q1 Packaging: Bulk Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 481pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D101200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200W6Q | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 10A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 490pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 110 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.88V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 72A Kind of package: tube Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.88V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 72A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200WQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D101200WQ - SiC-Schottky-Diode, Einfach, 1.2 kV, 10 A, 25 nC, TO-247 Periodische Sperrspannung Vrrm, max.: 1.2 Anzahl der Pins: 2 Pins Bauform - Diode: TO-247 Diodenkonfiguration: Einfach Sperrschichttemperatur Tj, max.: 175 Kapazitive Blindleistung Qc: 25 Kontinuierlicher Durchlassstrom If: 10 Produktpalette: - SVHC: No SVHC (19-Jan-2021) | auf Bestellung 553 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D101200WQ | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky SiC 1.2KV 10A 2-Pin(2+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D101200WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D101200W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D101200WQ | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 10A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 490pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 110 µA @ 1200 V | auf Bestellung 2333 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650BJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 8778 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650BJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D10650B/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD | auf Bestellung 4795 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650BJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 7200 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650BJ | Ween | WNSC2D10650B/TO263/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650BJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 2.2V Max. load current: 20A Max. forward impulse current: 50A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650BJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 2.2V Max. load current: 20A Max. forward impulse current: 50A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650DJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D10650D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650DJ | Ween | Rectifier Diode Schottky SiC 650V 10A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650DJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 7455 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650DJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DPAK Max. forward impulse current: 50A Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650DJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DPAK Max. forward impulse current: 50A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650DJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D10650Q - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 14 nC, TO-220 tariffCode: 85411000 Bauform - Diode: TO-220 Kapazitive Gesamtladung: 14nC rohsCompliant: NO Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: NO Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: PW Series productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2022) | auf Bestellung 2896 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D10650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D10650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650TJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 890 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650TJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 50A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650TJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D10650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650TJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650TJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 50A Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650WQ | WeEn Semiconductors | Description: DIODE SIL CARB 650V 10A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 517 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D10650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 962 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650XQ | WeEn Semiconductors | Description: DIODE SIL CARB 650V 10A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650XQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D10650X/TO220F-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650XQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Max. forward impulse current: 50A Kind of package: tube Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650XQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Max. forward impulse current: 50A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D10650XQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D10650XQ - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 14 nC, TO-220F tariffCode: 85411000 Bauform - Diode: TO-220F Kapazitive Gesamtladung: 14nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D12650TJ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D12650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D12650TJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 12A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 380pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V | auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D12650TJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 12A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 380pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D151200BT26J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D151200BT2/TO263-2L/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D151200BT26J | Ween | WNSC2D151200BT2/TO263-2L/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D151200W6Q | WeEn Semiconductors | Description: WNSC2D151200W/TO247-2L/STANDARD Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 700pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D151200W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D151200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D151200WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.95V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 102A Kind of package: tube Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D151200WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.95V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 102A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D151200WQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D151200WQ - SiC-Schottky-Diode, Einfach, 1.2 kV, 15 A, 35 nC, TO-247 Kapazitive Gesamtladung: 35 Durchschnittlicher Durchlassstrom: 15 Anzahl der Pins: 2 Pins Bauform - Diode: TO-247 Diodenkonfiguration: Einfach Qualifikation: - Wiederkehrende Spitzensperrspannung: 1.2 Produktpalette: - SVHC: No SVHC (19-Jan-2021) | auf Bestellung 596 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D151200WQ | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 15A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 700pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V | auf Bestellung 4589 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D151200WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D151200W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 297 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D16650CJQ | WeEn Semiconductors | Description: DIODE ARR SIC SCHOT 650V TO3PF Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | auf Bestellung 2369 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D16650CJQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D16650CJ/TO3PF/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 2396 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D16650CWQ | WeEn Semiconductors | SiC Schottky Diodes WNSC2D16650CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 484 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D16650CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 16A Max. forward voltage: 1.8V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 48A Anzahl je Verpackung: 240 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D16650CWQ | WeEn Semiconductors | Description: DIODE ARR SIC 650V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D16650CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 16A Max. forward voltage: 1.8V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 48A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D2012006Q | WeEn Semiconductors | Description: WNSC2D201200/SOD59A/STANDARD MAR Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 950pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D2012006Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D201200/SOD59A/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200BT26J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D201200BT2/TO263-2L/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200BT26J | Ween | WNSC2D201200BT2/TO263-2L/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200CW6Q | WeEn Semiconductors | Description: DIODE ARR SIC 1200V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 110 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200CW6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D201200CW/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK, | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200CWQ | Ween | Rectifier Diode Schottky SiC 1.2KV 20A 3-Pin(3+Tab) TO-247N Tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. load current: 20A Type of diode: Schottky rectifying Max. forward impulse current: 72A Load current: 10A x2 Anzahl je Verpackung: 480 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200CWQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D201200CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. load current: 20A Type of diode: Schottky rectifying Max. forward impulse current: 72A Load current: 10A x2 | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200CWQ | WeEn Semiconductors | Description: DIODE ARR SIC 1200V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 110 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200CWQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D201200CWQ - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 1.2 kV, 20 A, 25 nC, TO-247 Periodische Sperrspannung Vrrm, max.: 1.2 Anzahl der Pins: 3 Pins Bauform - Diode: TO-247 Diodenkonfiguration: Zweifach, gemeinsame Kathode Sperrschichttemperatur Tj, max.: 175 Kapazitive Blindleistung Qc: 25 Kontinuierlicher Durchlassstrom If: 20 Produktpalette: - SVHC: No SVHC (19-Jan-2021) | auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D201200W-B6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D201200W-B/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200W6Q | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 20A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 845pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D201200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 2.1V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 125A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D201200W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D201200WQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D201200WQ - SiC-Schottky-Diode, Einfach, 1.2 kV, 20 A, 39 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 39nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 20A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.2kV Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (19-Jan-2021) | auf Bestellung 596 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D201200WQ | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 20A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 845pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | auf Bestellung 2248 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D201200WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 2.1V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 125A Kind of package: tube Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D20650CJQ | WeEn Semiconductors | Description: DIODE ARR SIC SCHOT 650V TO3PF Packaging: Cut Tape (CT) Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
WNSC2D20650CJQ | WeEn Semiconductors | Description: DIODE ARR SIC SCHOT 650V TO3PF Packaging: Tape & Reel (TR) Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D20650CJQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: SOT1293; TO3PF Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube Anzahl je Verpackung: 2400 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D20650CJQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: SOT1293; TO3PF Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D20650CJQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D20650CJ/TO3PF/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D20650CWQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D20650CWQ - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 650 V, 20 A, 14 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 14nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 20A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 221 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D20650CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube Anzahl je Verpackung: 480 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D20650CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D20650CWQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D20650CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 1431 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D20650CWQ | Ween | WNSC2D20650CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D20650CWQ | WeEn Semiconductors | Description: DIODE ARR SIC 650V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 475 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D301200CW6Q | WeEn Semiconductors | Description: DIODE ARR SIC 1200V 30A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D301200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. load current: 30A Type of diode: Schottky rectifying Max. forward impulse current: 102A Load current: 15A x2 Anzahl je Verpackung: 600 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D301200CWQ | WeEn Semiconductors | Description: DUAL SILICON CARBIDE SCHOTTKY DI | auf Bestellung 596 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D301200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. load current: 30A Type of diode: Schottky rectifying Max. forward impulse current: 102A Load current: 15A x2 | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D301200CWQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D301200CW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D301200W6Q | Ween | Silicon Carbide Diode | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D301200W6Q | WeEn Semiconductors | Description: WNSC2D301200W/TO247-2L/STANDARD Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1407pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D301200W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D301200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D30650CWQ | WeEn Semiconductors | Description: DIODE ARR SIC 650V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 2697 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D30650CWQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D30650CW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D30650WQ | WeEn Semiconductors | Description: SILICON CARBIDE SCHOTTKY DI Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 980pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V | auf Bestellung 1025 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D30650WQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC2D30650WQ - SiC-Schottky-Diode, Einfach, 650 V, 30 A, 48 nC, TO-247 tariffCode: 85411000 productTraceability: No Kapazitive Gesamtladung: 48nC rohsCompliant: YES Durchschnittlicher Durchlassstrom: 30A euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Wiederkehrende Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 518 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2D30650WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D30650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D30650WQ | Ween | WNSC2D30650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D401200CW6Q | WeEn Semiconductors | Description: DIODE ARR SIC 1200V 40A TO247-3 Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 2000 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D401200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 125A Kind of package: tube Anzahl je Verpackung: 600 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D401200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 125A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D401200W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 80A Max. forward voltage: 2.5V Load current: 40A Semiconductor structure: single diode Max. forward impulse current: 350A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D401200W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D401200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D401200W6Q | Ween | WNSC2D401200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D401200W6Q | WeEn Semiconductors | Description: WNSC2D401200W/TO247-2L/STANDARD Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2068pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D401200W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 80A Max. forward voltage: 2.5V Load current: 40A Semiconductor structure: single diode Max. forward impulse current: 350A Kind of package: tube Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D501200W6Q | Ween | WNSC2D501200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D501200W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 100A Max. forward voltage: 2.5V Load current: 50A Semiconductor structure: single diode Max. forward impulse current: 420A Kind of package: tube Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D501200W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 100A Max. forward voltage: 2.5V Load current: 50A Semiconductor structure: single diode Max. forward impulse current: 420A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2D501200W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D501200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M12120R6Q | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M12120R6Q | Ween | WNSC2M12120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M150120B76J | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M150120B76J | Ween | WNSC2M150120B7/TO263-7L/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M150120R6Q | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M150120R6Q | Ween | WNSC2M150120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M150120W6Q | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M150120W6Q | Ween | WNSC2M150120W/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M1K0170B7J | WeEn Semiconductors | MOSFET WNSC2M1K0170B7/TO263-7L/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M1K0170B7J | Ween | WNSC2M1K0170B7/TO263-7L/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M1K0170WQ | WeEn Semiconductors | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Pulsed drain current: 20A Power dissipation: 79W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 1Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 240 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M1K0170WQ | WeEn Semiconductors | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Pulsed drain current: 20A Power dissipation: 79W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 1Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M1K0170WQ | WeEn Semiconductors | Description: WNSC2M1K0170W/TO247/STANDARD MAR Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 18V Power Dissipation (Max): 79W (Ta) Vgs(th) (Max) @ Id: 4.2V @ 800µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M1K0170WQ | WeEn Semiconductors | MOSFET WNSC2M1K0170W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M1K0170WQ | Ween | WNSC2M1K0170W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 3840 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC2M20120B76J | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M20120B76J | Ween | WNSC2M20120B7/TO263-7L/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M20120R6Q | WeEn Semiconductors | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 94A Pulsed drain current: 200A Power dissipation: 750W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 20mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M20120R6Q | WeEn Semiconductors | MOSFETs WNSC2M20120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M20120R6Q | Ween | WNSC2M20120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M20120R6Q | WeEn Semiconductors | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 94A Pulsed drain current: 200A Power dissipation: 750W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 20mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M30120B76J | Ween | WNSC2M30120B7/TO263-7L/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M30120R6Q | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M30120R6Q | Ween | WNSC2M30120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M40120B76J | WeEn Semiconductors | WNSC2M40120B7/TO263-7L/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M40120B76J | Ween | WNSC2M40120B7/TO263-7L/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M40120R6Q | Ween | WNSC2M40120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M40120R6Q | WeEn Semiconductors | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 100A Power dissipation: 405W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 55mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M40120R6Q | WeEn Semiconductors | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 100A Power dissipation: 405W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 55mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M40120R6Q | WeEn Semiconductors | MOSFET WNSC2M40120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M40120W6Q | WeEn Semiconductors | MOSFET WNSC2M40120W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M40120W6Q | Ween | WNSC2M40120W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M45065B76J | WeEn Semiconductors | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 181A; 484W Technology: SiC Mounting: SMD Features of semiconductor devices: Kelvin terminal Case: TO263-7 Power dissipation: 484W Kind of package: reel; tape Polarisation: unipolar Gate charge: 87nC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 181A Drain-source voltage: 650V Drain current: 64A On-state resistance: 49mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M60120B76J | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M60120B76J | Ween | WNSC2M60120B7/TO263-7L/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M60120R6Q | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M75120B76J | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M75120B76J | Ween | WNSC2M75120B7/TO263-7L/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M75120R6Q | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M75120W6Q | WeEn Semiconductors | WeEn Semiconductors N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC2M75120W6Q | Ween | WNSC2M75120W/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC401200CWQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC401200CWQ - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 1.2 kV, 40 A, 86 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 86nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 40A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.2kV Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC401200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 200A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC401200CWQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 200A Kind of package: tube Anzahl je Verpackung: 480 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC401200CWQ | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC2D401200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC401200CWQ | WeEn Semiconductors | Description: DIODE SIL CARB 1.2KV 40A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 810pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D046506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2.2V Max. load current: 8A Max. forward impulse current: 28A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D046506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2.2V Max. load current: 8A Max. forward impulse current: 28A Kind of package: tube Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D046506Q | WeEn Semiconductors | WeEn Semiconductors WNSC5D04650/SOD59A/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D04650D6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 2.2V Max. load current: 8A Max. forward impulse current: 26A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D04650D6J | Ween | WNSC5D04650D/TO252/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D04650D6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 2.2V Max. load current: 8A Max. forward impulse current: 26A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D06650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 12A Semiconductor structure: single diode Max. forward voltage: 2.2V Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 36A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D06650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 12A Semiconductor structure: single diode Max. forward voltage: 2.2V Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 36A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D06650X6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D06650X/TO220F-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D06650X6Q | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A TO220F Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 201pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D06650Y6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D06650Y/IITO220-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D086506Q | Ween | WNSC5D08650/SOD59A/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D08650X6Q | Ween | WNSC5D08650X/TO220F-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D106506Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D10650/SOD59A/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D10650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. load current: 19A Max. forward impulse current: 60A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D10650D6J | Ween | WNSC5D10650D/TO252/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D10650D6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D10650D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D10650X6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D126506Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 12A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 420pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D126506Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D12650/SOD59A/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D12650T6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D12650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D12650Y6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D12650Y/IITO220-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D16650CW6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D16650CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D206506Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 20A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 640pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D20650CJ6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D20650CJ/SOT1293/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D20650W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. load current: 40A Max. forward impulse current: 100A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D20650W6Q | Ween | WNSC5D20650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D20650W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D20650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D20650X6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 2.2V Max. load current: 40A Max. forward impulse current: 80A Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 998 Stücke: Lieferzeit 7-14 Tag (e) |
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WNSC5D20650X6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 2.2V Max. load current: 40A Max. forward impulse current: 80A Kind of package: tube | auf Bestellung 998 Stücke: Lieferzeit 14-21 Tag (e) |
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WNSC5D208006Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D20800/SOD59A/STANDARD MARKING HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D30650CW6Q | WeEn Semiconductors | Description: DIODE ARR SIC 650V 30A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D30650CW6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D30650CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5D30650W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC5D30650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC5RACK | American Power Conversion | Struxure Ware 5 Rack Installation Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D01650MBJ | Ween | WNSC6D01650MB/SMB/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D01650MBJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Max. load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.4V Case: SMB Kind of package: reel; tape Max. forward impulse current: 18A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D01650MBJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 1A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 8357 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D01650MBJ | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Max. load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.4V Case: SMB Kind of package: reel; tape Max. forward impulse current: 18A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D01650MBJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 1A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D046506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 8A Max. forward impulse current: 36A Kind of package: tube Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D046506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 8A Max. forward impulse current: 36A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D04650Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 30A Kind of package: tube Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D04650Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 30A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D04650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D04650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 2917 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D06650D6J | Ween | WNSC6D06650D/TO252/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D06650Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 46A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D06650Q | Ween | WNSC6D06650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D06650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D06650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 9066 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D06650Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 46A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D06650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 12A Semiconductor structure: single diode Max. forward voltage: 1.55V Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 45A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D06650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 12A Semiconductor structure: single diode Max. forward voltage: 1.55V Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 45A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D06650Y6Q | Ween | WNSC6D06650Y/IITO220-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D08650D6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D08650D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D08650Q | Ween | WNSC6D08650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D08650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D08650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 2927 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D08650Q | WeEn Semiconductors | WNSC6D08650Q THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D08650Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC6D08650Q - SiC-Schottky-Diode, Einfach, 650 V, 8 A, 19 nC, TO-220 tariffCode: 85411000 Bauform - Diode: TO-220 Kapazitive Gesamtladung: 19nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 8A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (19-Jan-2021) | auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC6D08650X6Q | Ween | WNSC6D08650X/TO220F-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D106506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. load current: 20A Max. forward impulse current: 85A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D10650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.65V Max. load current: 20A Max. forward impulse current: 80A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D10650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.65V Max. load current: 20A Max. forward impulse current: 80A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D10650BT2-A6J | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D10650BT2-A/TO263-2L/REEL 13" Q1/T1 STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D10650D6J | Ween | WNSC6D10650D/TO252/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D10650Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 75A Kind of package: tube Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D10650Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 500pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 935 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D10650Q | Ween | WNSC6D10650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D10650Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC6D10650Q - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 24 nC, TO-220 tariffCode: 85411000 Bauform - Diode: TO-220 Kapazitive Gesamtladung: 24nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 848 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC6D10650Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 75A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D10650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D10650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 2639 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D10650T6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Max. load current: 20A Max. forward impulse current: 75A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D10650X6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Max. load current: 20A Max. forward impulse current: 75A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D10650Y6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220ACIns Max. load current: 18A Max. forward impulse current: 75A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D166506Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC6D166506Q - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 36 nC, TO-220 tariffCode: 85411000 Bauform - Diode: TO-220 Kapazitive Gesamtladung: 36nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 16A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: PW Series productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2022) | auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC6D166506Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D16650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D166506Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 16A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V | auf Bestellung 2976 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D16650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 16A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D16650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 16A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V | auf Bestellung 4720 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D16650CW6Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D16650CW6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 32A Max. forward voltage: 1.65V Load current: 16A Max. forward impulse current: 110A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D16650CW6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 32A Max. forward voltage: 1.65V Load current: 16A Max. forward impulse current: 110A | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D20650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D20650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 120A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D20650B6J | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC6D20650B6J - SiC-Schottky-Diode, Einfach, 650 V, 20 A, 36 nC, TO-263 (D2PAK) tariffCode: 85411000 productTraceability: No Kapazitive Gesamtladung: 36nC rohsCompliant: YES Durchschnittlicher Durchlassstrom: 20A euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Wiederkehrende Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C usEccn: EAR99 Produktpalette: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 519 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC6D20650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 120A Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D20650B6J | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC6D20650B6J - SiC-Schottky-Diode, Einfach, 650 V, 20 A, 36 nC, TO-263 (D2PAK) tariffCode: 85411000 productTraceability: No Kapazitive Gesamtladung: 36nC rohsCompliant: YES Durchschnittlicher Durchlassstrom: 20A euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Wiederkehrende Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C usEccn: EAR99 Produktpalette: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 519 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC6D20650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V | auf Bestellung 4818 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D20650B6J | Ween | WNSC6D20650B/TO263/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D20650CJ6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D20650CJ/SOT1293/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D20650CW-A6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D20650CW-A/SOT429/STANDARD MARKING HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D20650CW6Q | WeEn Semiconductors | Description: DIODE ARR SIC 650V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V | auf Bestellung 465 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D20650CW6Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC6D20650CW6Q - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 650 V, 20 A, 24 nC, TO-247 tariffCode: 85411000 productTraceability: No Kapazitive Gesamtladung: 24nC rohsCompliant: YES Durchschnittlicher Durchlassstrom: 20A euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Wiederkehrende Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C usEccn: EAR99 Produktpalette: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC6D20650W6Q | Ween | WNSC6D20650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D20650WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 155A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D20650WQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - WNSC6D20650WQ - SiC-Schottky-Diode, Einfach, 650 V, 20 A, 65 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 65nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 20A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 429 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
WNSC6D20650WQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 155A Kind of package: tube Anzahl je Verpackung: 1200 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D20650WQ | WeEn Semiconductors | Description: DIODE SIL CARB 650V 20A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1200pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V | auf Bestellung 526 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC6D20650X6Q | WeEn Semiconductors | WeEn Semiconductors Silicon Carbide Diode | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D30650CW-A6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D30650CW-A/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D30650CW6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D30650CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D30650W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D30650W/TO247-2L/STANDARD MARKING HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D30650W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 30A Semiconductor structure: single diode Case: TO247-2 Max. load current: 77A Max. forward impulse current: 215A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D40650CW-A6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 140A Kind of package: tube Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D40650CW6Q | Ween | WNSC6D40650CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSC6D40650CW6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 170A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCESREALRM | Schneider Electric | Schneider Electric Ecostruxure IT Expert Remote Alarm Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCESREALRT | Schneider Electric | Schneider Electric Ecostruxure IT Expert Remote Alerting Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCESREBASE | Schneider Electric | Schneider Electric Ecostruxure IT Expert Remote Base Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCESREBMS | Schneider Electric | Schneider Electric Ecostruxure IT Expert Remote BMS Integration Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCESREDAY | Schneider Electric | Schneider Electric Ecostruxure IT Expert Remote Daily Labor Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCESREMIG | Schneider Electric | Calibration, Warranties, & Service Plans Ecostruxure IT Expert Remote DCE-ITE Migration Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCESRETRAIN | Schneider Electric | Schneider Electric Ecostruxure IT Expert Remote Training Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCESREVS | Schneider Electric | Schneider Electric Ecostruxure IT Expert Remote Virtual Sensor Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCESSUCORE | Schneider Electric | Calibration, Warranties, & Service Plans EcoStruxure IT Expert Onboarding Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM160120W6Q | Ween | WNSCM160120W/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM160120W6Q | WeEn Semiconductors | MOSFET WNSCM160120W/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM160120WQ | Ween | WNSCM160120W/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM160120WQ | WeEn Semiconductors | Description: WNSCM160120W/TO-247/STANDARD MAR Packaging: Bulk Part Status: Active Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V Power Dissipation (Max): 155W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 736 pF @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM160120WQ | WeEn Semiconductors | MOSFET WNSCM160120W/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120R6Q | WeEn Semiconductors | MOSFET WNSCM80120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120R6Q | WeEn Semiconductors | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 32A Pulsed drain current: 81A Power dissipation: 270W Case: TO247-4 Gate-source voltage: -10...25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 59nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120R6Q | WeEn Semiconductors | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 32A Pulsed drain current: 81A Power dissipation: 270W Case: TO247-4 Gate-source voltage: -10...25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 59nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120R6Q | Ween | WNSCM80120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120RQ | WeEn Semiconductors | Description: WNSCM80120R/TO247-4L/STANDARD MA Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Power Dissipation (Max): 270W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 6mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120RQ | Ween | WNSCM80120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120RQ | WeEn Semiconductors | MOSFET WNSCM80120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120W6Q | WeEn Semiconductors | MOSFETs WNSCM80120W/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120W6Q | Ween | N-Channel Silicon Carbide MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120WQ | Ween | WNSCM80120W/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120WQ | WeEn Semiconductors | Description: WNSCM80120W/TO-247/STANDARD MARK Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Power Dissipation (Max): 230W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 6mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCM80120WQ | WeEn Semiconductors | MOSFET WNSCM80120W/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||||
WNSCRCAPADM | Schneider Electric | Calibration, Warranties, & Service Plans Remote IT Advisor Capacity Administration Training | Produkt ist nicht verfügbar | |||||||||||||||||
WNSWACS10DDF | Schneider Electric | Calibration, Warranties, & Service Plans Expedited DDF Creation Service 10 DDF Pack | Produkt ist nicht verfügbar | |||||||||||||||||
WNSWDCIMCUSTOM | Schneider Electric | Calibration, Warranties, & Service Plans DCIM Custom Service | Produkt ist nicht verfügbar | |||||||||||||||||
WNSWDCIMCUSTOMH | Schneider Electric | Calibration, Warranties, & Service Plans EcoStruxure Custom Services | Produkt ist nicht verfügbar | |||||||||||||||||
WNSWDCIMCUSTOMR | Schneider Electric | Calibration, Warranties, & Service Plans DCIM Custom Service ROW | Produkt ist nicht verfügbar |