Produkte > VMO
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||
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VMO1200-01F | IXYS | Description: MOSFET N-CH 100V 1220A Y3-LI | auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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VMO1200-01F | Littelfuse | Trans MOSFET N-CH 100V 1.22KA Automotive 4-Pin Case Y3 Box | Produkt ist nicht verfügbar | |||||
VMO1200-01F | IXYS | Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 1.22kA; Y3-Li; PolarHT™; 1.71uC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 1.22kA Case: Y3-Li Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.25mΩ Technology: PolarHT™ Kind of channel: enhanced Gate charge: 1.71µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||
VMO1200-01F | IXYS | Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 1.22kA; Y3-Li; PolarHT™; 1.71uC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 1.22kA Case: Y3-Li Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.25mΩ Technology: PolarHT™ Kind of channel: enhanced Gate charge: 1.71µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||
VMO1200-01F | IXYS | Discrete Semiconductor Modules 1200 Amps 100V | auf Bestellung 221 Stücke: Lieferzeit 10-14 Tag (e) | |||||
VMO1200-01F | Littelfuse | Trans MOSFET N-CH 100V 1.22KA 4-Pin Case Y3 Box | Produkt ist nicht verfügbar | |||||
VMO150-01P1 | IXYS | Description: MOSFET N-CH 100V 165A ECO-PAC2 | Produkt ist nicht verfügbar | |||||
VMO1600-02P | IXYS | Description: MOSFET N-CH 200V 1900A Y3-LI | Produkt ist nicht verfügbar | |||||
VMO1600-02P Modul Produktcode: 57784 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||
VMO40-05P1 | IXYS | Description: MOSFET N-CH ECO-PAC2 | Produkt ist nicht verfügbar | |||||
VMO400-02 | IXYS | . | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||
VMO400-02 | IXYS | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||
VMO400-02F Produktcode: 169604 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||
VMO400-02F | IXYS | 420A/MOSFET | auf Bestellung 83 Stücke: Lieferzeit 21-28 Tag (e) | |||||
VMO400-02F | IXYS | J4-4 | auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) | |||||
VMO400-02FL | IXYS | J4-6 WL | auf Bestellung 169 Stücke: Lieferzeit 21-28 Tag (e) | |||||
VMO400-02FL/11 | auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) | |||||||
VMO400-02FL/13 | auf Bestellung 43 Stücke: Lieferzeit 21-28 Tag (e) | |||||||
VMO400-02FLZ | auf Bestellung 43 Stücke: Lieferzeit 21-28 Tag (e) | |||||||
VMO440-02 | auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) | |||||||
VMO440-02F | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||
VMO440-02FL | IXYS | J4-4 WL | auf Bestellung 752 Stücke: Lieferzeit 21-28 Tag (e) | |||||
VMO440-02FL Produktcode: 166873 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||
VMO550-01F | IXYS | Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 590A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 2.1mΩ Pulsed drain current: 2.36kA Power dissipation: 2.2kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||
VMO550-01F | IXYS | Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 590A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 2.1mΩ Pulsed drain current: 2.36kA Power dissipation: 2.2kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||
VMO550-01F | IXYS | Description: MOSFET N-CH 100V 590A Y3-DCB Packaging: Box Package / Case: Y3-DCB Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 590A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 500mA, 10V Power Dissipation (Max): 2200W (Tc) Vgs(th) (Max) @ Id: 6V @ 110mA Supplier Device Package: Y3-DCB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2000 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50000 pF @ 25 V | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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VMO580-02F | IXYS | Description: MOSFET N-CH 200V 580A Y3-LI Packaging: Bulk Package / Case: Y3-Li Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 580A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V Vgs(th) (Max) @ Id: 4V @ 50mA Supplier Device Package: Y3-Li Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V | Produkt ist nicht verfügbar | |||||
VMO580-02F | IXYS | Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 580A; Y3-Li; HiPerFET™; 2.75uC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 580A Case: Y3-Li Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 3.8mΩ Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2.75µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||
VMO60-05F | IXYS | Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 60A Case: TO240AA Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 240A Power dissipation: 590W Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 405nC Reverse recovery time: 250ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||
VMO60-05F | IXYS | Discrete Semiconductor Modules 60 Amps 500V | Produkt ist nicht verfügbar | |||||
VMO60-05F | IXYS | Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 60A Case: TO240AA Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 240A Power dissipation: 590W Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 405nC Reverse recovery time: 250ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||
VMO60-05F | Ixys Semiconductor GmbH | N-CH HDMOS 500В 60А 65mOm 250 нсек | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||
VMO60-05F | IXYS | Description: MOSFET N-CH 500V 60A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V Power Dissipation (Max): 590W (Tc) Vgs(th) (Max) @ Id: 4V @ 24mA Supplier Device Package: TO-240AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V | Produkt ist nicht verfügbar | |||||
VMO650-01F | IXYS | Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 690A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.8mΩ Pulsed drain current: 2.78kA Power dissipation: 2.5kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2.3µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||
VMO650-01F | Littelfuse | Trans MOSFET N-CH 100V 690A Automotive 4-Pin Y3-DCB | Produkt ist nicht verfügbar | |||||
VMO650-01F | IXYS | Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 690A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.8mΩ Pulsed drain current: 2.78kA Power dissipation: 2.5kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2.3µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||
VMO650-01F | IXYS | Description: MOSFET N-CH 100V 690A Y3-DCB Packaging: Bulk Package / Case: Y3-DCB Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 690A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V Power Dissipation (Max): 2500W (Tc) Vgs(th) (Max) @ Id: 6V @ 130mA Supplier Device Package: Y3-DCB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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VMO80-05P1 | IXYS | Description: MOSFET N-CH ECO-PAC2 | Produkt ist nicht verfügbar | |||||
VMOB70 | ACRINA | TO-55 | auf Bestellung 26 Stücke: Lieferzeit 21-28 Tag (e) |