Produkte > V9N
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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V9N | SAIA-BURGESS | V9N Microswitches SNAP ACTION | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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V9N | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N2SW0C-AZE8Z-1 | Carling Technologies | Description: SWITCH ROCKER SPST 0.4VA 24V Packaging: Bulk Current Rating (Amps): 0.4VA (DC), 15A (DC) Mounting Type: Panel Mount, Snap-In Circuit: SPST Switch Function: On-Off Operating Temperature: -40°C ~ 85°C Termination Style: Quick Connect - 0.250" (6.3mm) Actuator Type: Locking Approval Agency: CSA, UL, VDE Ingress Protection: IP66/IP68 - Dust Tight, Water Resistant, Waterproof Panel Cutout Dimensions: Rectangular - 36.83mm x 21.08mm Color - Actuator/Cap: Black Actuator Marking: High Beam, Vertical Voltage Rating - DC: 24 V | Produkt ist nicht verfügbar | |||||||||||||||||
V9N3103-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V | auf Bestellung 5900 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3103-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
V9N3103HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3103HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3202-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 200V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3202-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 200V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3202HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 200V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3202HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 200V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3L63-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3L63-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3L63HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3L63HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M103-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M103-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M103HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M103HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M153-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 150V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 510pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M153-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 150V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 510pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M153HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 150V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 510pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M153HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 150V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 510pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M63-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M63-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M63HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9N3M63HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V9NLR | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | auf Bestellung 126 Stücke: Lieferzeit 10-14 Tag (e) |
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V9NLR1 | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | Produkt ist nicht verfügbar | |||||||||||||||||
V9NLR1V | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | Produkt ist nicht verfügbar | |||||||||||||||||
V9NLR1V-3.0M | SAIA-BURGESS | V9NLR1V-3.0M Microswitches SNAP ACTION | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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V9NLRV | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | Produkt ist nicht verfügbar | |||||||||||||||||
V9NMR | SAIA-BURGESS | Category: Microswitches SNAP ACTION Description: Microswitch SNAP ACTION; 10A/250VAC; with lever (with roller) Type of switch: microswitch SNAP ACTION AC contacts rating @R: 10A / 250V AC Switches features: with lever (with roller) Contacts configuration: SPDT Switching method: ON-(ON) Number of positions: 2 Stable positions number: 1 IP rating: IP67 Leads: M3 screws Body dimensions: 42x16x24.5mm Operating temperature: -10...85°C Lever length: 14mm Manufacturer series: V9N Anzahl je Verpackung: 1 Stücke | auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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V9NMR | SAIA-BURGESS | Category: Microswitches SNAP ACTION Description: Microswitch SNAP ACTION; 10A/250VAC; with lever (with roller) Type of switch: microswitch SNAP ACTION AC contacts rating @R: 10A / 250V AC Switches features: with lever (with roller) Contacts configuration: SPDT Switching method: ON-(ON) Number of positions: 2 Stable positions number: 1 IP rating: IP67 Leads: M3 screws Body dimensions: 42x16x24.5mm Operating temperature: -10...85°C Lever length: 14mm Manufacturer series: V9N | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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V9NMR | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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