Produkte > V9N

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
V9NSAIA-BURGESSV9N Microswitches SNAP ACTION
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
2+55.96 EUR
Mindestbestellmenge: 2
V9NSaia-BurgessBasic / Snap Action Switches Metal house microswitch
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
1+73.16 EUR
10+ 54.88 EUR
25+ 50.32 EUR
50+ 47.27 EUR
100+ 44.21 EUR
600+ 41.17 EUR
1000+ 39.27 EUR
V9N2SW0C-AZE8Z-1Carling TechnologiesDescription: SWITCH ROCKER SPST 0.4VA 24V
Packaging: Bulk
Current Rating (Amps): 0.4VA (DC), 15A (DC)
Mounting Type: Panel Mount, Snap-In
Circuit: SPST
Switch Function: On-Off
Operating Temperature: -40°C ~ 85°C
Termination Style: Quick Connect - 0.250" (6.3mm)
Actuator Type: Locking
Approval Agency: CSA, UL, VDE
Ingress Protection: IP66/IP68 - Dust Tight, Water Resistant, Waterproof
Panel Cutout Dimensions: Rectangular - 36.83mm x 21.08mm
Color - Actuator/Cap: Black
Actuator Marking: High Beam, Vertical
Voltage Rating - DC: 24 V
Produkt ist nicht verfügbar
V9N3103-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.62 EUR
18+ 1.01 EUR
25+ 0.85 EUR
100+ 0.66 EUR
250+ 0.57 EUR
500+ 0.52 EUR
1000+ 0.47 EUR
2500+ 0.42 EUR
Mindestbestellmenge: 11
V9N3103-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
V9N3103HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
19+ 0.93 EUR
25+ 0.88 EUR
100+ 0.72 EUR
250+ 0.66 EUR
500+ 0.57 EUR
1000+ 0.45 EUR
2500+ 0.41 EUR
Mindestbestellmenge: 17
V9N3103HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.38 EUR
Mindestbestellmenge: 6000
V9N3202-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 200V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+ 0.87 EUR
25+ 0.82 EUR
100+ 0.67 EUR
250+ 0.62 EUR
500+ 0.53 EUR
1000+ 0.42 EUR
2500+ 0.38 EUR
Mindestbestellmenge: 18
V9N3202-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 200V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.36 EUR
Mindestbestellmenge: 6000
V9N3202HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 200V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.4 EUR
Mindestbestellmenge: 6000
V9N3202HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 200V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
18+ 0.99 EUR
25+ 0.93 EUR
100+ 0.76 EUR
250+ 0.7 EUR
500+ 0.6 EUR
1000+ 0.48 EUR
2500+ 0.43 EUR
Mindestbestellmenge: 16
V9N3L63-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.33 EUR
Mindestbestellmenge: 6000
V9N3L63-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
22+ 0.81 EUR
25+ 0.76 EUR
100+ 0.62 EUR
250+ 0.58 EUR
500+ 0.49 EUR
1000+ 0.39 EUR
2500+ 0.36 EUR
Mindestbestellmenge: 20
V9N3L63HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+ 0.92 EUR
25+ 0.86 EUR
100+ 0.7 EUR
250+ 0.65 EUR
500+ 0.56 EUR
1000+ 0.44 EUR
2500+ 0.4 EUR
Mindestbestellmenge: 17
V9N3L63HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.38 EUR
Mindestbestellmenge: 6000
V9N3M103-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+ 0.83 EUR
25+ 0.78 EUR
100+ 0.64 EUR
250+ 0.59 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
2500+ 0.37 EUR
Mindestbestellmenge: 19
V9N3M103-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.34 EUR
Mindestbestellmenge: 6000
V9N3M103HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
19+ 0.93 EUR
25+ 0.88 EUR
100+ 0.72 EUR
250+ 0.66 EUR
500+ 0.57 EUR
1000+ 0.45 EUR
2500+ 0.41 EUR
Mindestbestellmenge: 17
V9N3M103HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.38 EUR
Mindestbestellmenge: 6000
V9N3M153-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+ 0.83 EUR
25+ 0.78 EUR
100+ 0.64 EUR
250+ 0.59 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
2500+ 0.37 EUR
Mindestbestellmenge: 19
V9N3M153-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.34 EUR
Mindestbestellmenge: 6000
V9N3M153HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.38 EUR
Mindestbestellmenge: 6000
V9N3M153HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
19+ 0.94 EUR
25+ 0.88 EUR
100+ 0.72 EUR
250+ 0.67 EUR
500+ 0.57 EUR
1000+ 0.45 EUR
2500+ 0.41 EUR
Mindestbestellmenge: 17
V9N3M63-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.33 EUR
Mindestbestellmenge: 6000
V9N3M63-M3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
22+ 0.81 EUR
25+ 0.76 EUR
100+ 0.62 EUR
250+ 0.58 EUR
500+ 0.49 EUR
1000+ 0.39 EUR
2500+ 0.36 EUR
Mindestbestellmenge: 20
V9N3M63HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+ 0.91 EUR
25+ 0.86 EUR
100+ 0.7 EUR
250+ 0.65 EUR
500+ 0.55 EUR
1000+ 0.44 EUR
2500+ 0.4 EUR
Mindestbestellmenge: 17
V9N3M63HM3/IVishay General Semiconductor - Diodes DivisionDescription: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.37 EUR
Mindestbestellmenge: 6000
V9NLRSaia-BurgessBasic / Snap Action Switches Metal house microswitch
auf Bestellung 126 Stücke:
Lieferzeit 10-14 Tag (e)
1+69.17 EUR
10+ 61.74 EUR
25+ 58.38 EUR
50+ 56 EUR
200+ 50.53 EUR
V9NLR1Saia-BurgessBasic / Snap Action Switches Metal house microswitch
Produkt ist nicht verfügbar
V9NLR1VSaia-BurgessBasic / Snap Action Switches Metal house microswitch
Produkt ist nicht verfügbar
V9NLR1V-3.0MSAIA-BURGESSV9NLR1V-3.0M Microswitches SNAP ACTION
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
1+91.59 EUR
V9NLRVSaia-BurgessBasic / Snap Action Switches Metal house microswitch
Produkt ist nicht verfügbar
V9NMRSAIA-BURGESSCategory: Microswitches SNAP ACTION
Description: Microswitch SNAP ACTION; 10A/250VAC; with lever (with roller)
Type of switch: microswitch SNAP ACTION
AC contacts rating @R: 10A / 250V AC
Switches features: with lever (with roller)
Contacts configuration: SPDT
Switching method: ON-(ON)
Number of positions: 2
Stable positions number: 1
IP rating: IP67
Leads: M3 screws
Body dimensions: 42x16x24.5mm
Operating temperature: -10...85°C
Lever length: 14mm
Manufacturer series: V9N
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
2+61.5 EUR
30+ 61 EUR
Mindestbestellmenge: 2
V9NMRSAIA-BURGESSCategory: Microswitches SNAP ACTION
Description: Microswitch SNAP ACTION; 10A/250VAC; with lever (with roller)
Type of switch: microswitch SNAP ACTION
AC contacts rating @R: 10A / 250V AC
Switches features: with lever (with roller)
Contacts configuration: SPDT
Switching method: ON-(ON)
Number of positions: 2
Stable positions number: 1
IP rating: IP67
Leads: M3 screws
Body dimensions: 42x16x24.5mm
Operating temperature: -10...85°C
Lever length: 14mm
Manufacturer series: V9N
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
2+61.5 EUR
Mindestbestellmenge: 2
V9NMRSaia-BurgessBasic / Snap Action Switches Metal house microswitch
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
1+81.31 EUR
10+ 73.5 EUR
25+ 70.95 EUR
50+ 66.26 EUR
200+ 62.08 EUR