Produkte > RND
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||
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| RND0.8ZHH-M6 | Bel Power Solutions | Description: DC DC CONVERTER +/-12V 10W | Produkt ist nicht verfügbar | |||||||||||||
| RND0.8ZHH-M6G | Bel Power Solutions | Description: DC/DC CONVERTER +/-12V 10W | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||
| RND0.8ZHH-M6G | Bel Power Solutions | Isolated DC/DC Converters ISOLATED DC-DC CONVERTER | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||
| RND02ZGE-M6 | Bel Power Solutions | Description: DC DC CONVERTER 3.27V 5.2V 10W | Produkt ist nicht verfügbar | |||||||||||||
| RND02ZGG-M6 | Bel Power Solutions | Description: DC/DC CONVERT +/-5.1V 1A | Produkt ist nicht verfügbar | |||||||||||||
| RND030N20TL | Rohm Semiconductor | Description: MOSFET N-CH 200V 3A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V | auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
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| RND030N20TL | Rohm Semiconductor | Description: MOSFET N-CH 200V 3A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||
| RND030N20TL | ROHM Semiconductor | MOSFETs 10V Drive Nch Power MOSFET | auf Bestellung 1270 Stücke: Lieferzeit 10-14 Tag (e) |
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| RND030N20TL | Rohm Semiconductor | Description: MOSFET N-CH 200V 3A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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