Produkte > NVJ
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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NVJD4152PT1G | ON Semiconductor | auf Bestellung 408123 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
NVJD4152PT1G | onsemi | MOSFETs Dual P-Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mohm | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD4401NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.14W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 0.375Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
NVJD4401NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.14W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 0.375Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
NVJD4401NT1G | onsemi | Description: MOSFET 2N-CH 20V 0.63A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 50269 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD4401NT1G | onsemi | MOSFET NFET SC88 20V 630MA 375MO | auf Bestellung 9999 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD4401NT1G | onsemi | Description: MOSFET 2N-CH 20V 0.63A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD4401NT1G | ON Semiconductor | Trans MOSFET N-CH 20V 0.91A Automotive 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
NVJD4401NT1G | ONSEMI | Description: ONSEMI - NVJD4401NT1G - Dual-MOSFET, n-Kanal, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 630mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.29ohm Verlustleistung, p-Kanal: 550mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 550mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1516 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
NVJD5121NT1G | onsemi | Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R Automotive AEC-Q101 | auf Bestellung 15322 Stücke: Lieferzeit 14-21 Tag (e) |
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NVJD5121NT1G | onsemi | MOSFETs NFET SC88 60V 295MA 1.6OH | auf Bestellung 27340 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
NVJD5121NT1G | onsemi | Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 27935 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD5121NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Mounting: SMD Case: SC70-6; SC88; SOT363 Drain-source voltage: 60V Drain current: 0.212A On-state resistance: 1.6Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.25W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V | auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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NVJD5121NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Mounting: SMD Case: SC70-6; SC88; SOT363 Drain-source voltage: 60V Drain current: 0.212A On-state resistance: 1.6Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.25W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 5 Stücke | auf Bestellung 210 Stücke: Lieferzeit 7-14 Tag (e) |
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NVJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R Automotive AEC-Q101 | auf Bestellung 15322 Stücke: Lieferzeit 14-21 Tag (e) |
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NVJD5121NT1G-M06 | onsemi | Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD5121NT1G-M06 | ON Semiconductor | Dual N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
NVJD5121NT1G-M06 | onsemi | RF MOSFET Transistors NFET SC88 60V 295MA 1.6OH | auf Bestellung 29650 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD5121NT1G-M06 | onsemi | Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 13670 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD5121NT2G | onsemi | Description: NFET SC88 60V 295MA 1.6OH Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2841 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD5121NT2G | ONSEMI | Description: ONSEMI - NVJD5121NT2G - Dual-MOSFET, Zweifach n-Kanal, 60 V, 295 mA, 1.6 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 295mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SC-88 Anzahl der Pins: 6Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.6ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 250mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
NVJD5121NT2G | onsemi | MOSFET Dual N-Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6ohm | auf Bestellung 2930 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD5121NT2G | onsemi | Description: NFET SC88 60V 295MA 1.6OH Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
NVJD5121NT2G | ONSEMI | Description: ONSEMI - NVJD5121NT2G - Dual-MOSFET, Zweifach n-Kanal, 60 V, 295 mA, 1.6 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 295mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SC-88 Anzahl der Pins: 6Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.6ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 250mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
NVJS4151PT1G | onsemi | Description: MOSFET P-CH 20V 3.2A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 2.9A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 65705 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJS4151PT1G | ONSEMI | Description: ONSEMI - NVJS4151PT1G - Leistungs-MOSFET, Trench-Transistor, p-Kanal, 20 V, 3.2 A, 0.055 ohm, SOT-363, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.2W Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.055ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 8280 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
NVJS4151PT1G | onsemi | Description: MOSFET P-CH 20V 3.2A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 2.9A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJS4151PT1G | ONSEMI | Description: ONSEMI - NVJS4151PT1G - Leistungs-MOSFET, Trench-Transistor, p-Kanal, 20 V, 3.2 A, 0.055 ohm, SOT-363, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.2W Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.055ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 8280 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
NVJS4151PT1G | onsemi | MOSFET 20V 4.2A 60MOHM PFET | auf Bestellung 29874 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJS4405NT1G | ON Semiconductor | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
NVJS4405NT1G | onsemi | Description: MOSFET N-CH 25V 1A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V | auf Bestellung 2949 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJS4405NT1G | onsemi | MOSFET Single N-Channel Small Signal MOSFET 25V, 1.2A, 350mohm Automotive Version of the NTJS4405N | auf Bestellung 1484 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJS4405NT1G | onsemi | Description: MOSFET N-CH 25V 1A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V | Produkt ist nicht verfügbar |