Produkte > NHU
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| NHUMB10F | Nexperia | Bipolar Transistors - BJT NHUMB10/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB10F | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB10F | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB10X | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB10X | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB10X | Nexperia | Bipolar Transistors - BJT NHUMB10/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB11F | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB11F | Nexperia | Bipolar Transistors - BJT NHUMB11/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB11F | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB11X | Nexperia | Bipolar Transistors - BJT NHUMB11/SOT363/SC-88 | auf Bestellung 8675 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB11X | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB11X | NEXPERIA | Trans Digital BJT PNP 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB11X | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB13F | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 19900 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB13F | Nexperia | Bipolar Transistors - BJT NHUMB13/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB13F | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB13X | Nexperia | Bipolar Transistors - BJT NHUMB13/SOT363/SC-88 | auf Bestellung 5534 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB13X | NEXPERIA | Description: NEXPERIA - NHUMB13X - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 80 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMB13 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach pnp Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2674 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMB13X | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB13X | NEXPERIA | Description: NEXPERIA - NHUMB13X - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 80 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMB13 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach pnp Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2674 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMB13X | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB1F | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 235mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB1F | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 235mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB1F | Nexperia | Bipolar Transistors - BJT NHUMB1/SOT363/SC-88 | auf Bestellung 10000 Stücke: Lieferzeit 164-168 Tag (e) |
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| NHUMB1X | Nexperia | Bipolar Transistors - BJT NHUMB1/SOT363/SC-88 | auf Bestellung 9000 Stücke: Lieferzeit 164-168 Tag (e) |
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| NHUMB2F | NEXPERIA | Description: NEXPERIA - NHUMB2F - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 80 V, 100 mA, 47 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 47kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMB2 Series productTraceability: No Wandlerpolarität: Zweifach pnp Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMB2F | Nexperia | Bipolar Transistors - BJT NHUMB2/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB2F | Nexperia USA Inc. | Description: NHUMB2/SOT363/SC-88 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB2F | NEXPERIA | Description: NEXPERIA - NHUMB2F - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 80 V, 100 mA, 47 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 47kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMB2 Series productTraceability: No Wandlerpolarität: Zweifach pnp Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMB2F | Nexperia USA Inc. | Description: NHUMB2/SOT363/SC-88 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| NHUMB2X | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB2X | NEXPERIA | Description: NEXPERIA - NHUMB2X - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 80 V, 100 mA, 47 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 47kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMB2 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach pnp Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2868 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMB2X | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB2X | Nexperia | Bipolar Transistors - BJT NHUMB2/SOT363/SC-88 | auf Bestellung 3649 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB2X | NEXPERIA | Description: NEXPERIA - NHUMB2X - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 80 V, 100 mA, 47 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 47kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMB2 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach pnp Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2868 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMB9F | Nexperia | Bipolar Transistors - BJT NHUMB9/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB9F | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB9F | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMB9X | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB9X | Nexperia | Bipolar Transistors - BJT NHUMB9/SOT363/SC-88 | auf Bestellung 5709 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMB9X | Nexperia USA Inc. | Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD10F | NEXPERIA | Description: NEXPERIA - NHUMD10F - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 2.2 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD10 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5890 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD10F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD10F | NEXPERIA | Description: NEXPERIA - NHUMD10F - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 2.2 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD10 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5890 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD10F | Nexperia | Bipolar Transistors - BJT NHUMD10/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD10F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD10F | NEXPERIA | Trans Digital BJT NPN/PNP 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD10X | Nexperia | Bipolar Transistors - BJT NHUMD10/SOT363/SC-88 | auf Bestellung 4828 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD10X | NEXPERIA | Description: NEXPERIA - NHUMD10X - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 2.2 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD10 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD10X | Nexperia USA Inc. | Description: NHUMD10/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD10X | NEXPERIA | Trans Digital BJT NPN/PNP 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD10X | NEXPERIA | Description: NEXPERIA - NHUMD10X - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 2.2 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD10 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD10X | Nexperia USA Inc. | Description: NHUMD10/SOT363/SC-88 | auf Bestellung 2220 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD12F | NEXPERIA | Trans Digital BJT NPN/PNP 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD12F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD12F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD12F | Nexperia | Bipolar Transistors - BJT NHUMD12/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD12X | Nexperia | Trans Digital BJT NPN/PNP 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD12X | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 18988 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD12X | Nexperia | Bipolar Transistors - BJT NHUMD12/SOT363/SC-88 | auf Bestellung 7728 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD12X | NEXPERIA | Trans Digital BJT NPN/PNP 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD12X | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD13F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD13F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD13F | Nexperia | Bipolar Transistors - BJT NHUMD13/SOT363/SC-88 SOT363 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD13X | NEXPERIA | Trans Digital BJT NPN/PNP 80V 100mA 350mW Automotive AEC-Q101 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD13X | NEXPERIA | Description: NEXPERIA - NHUMD13X - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 4.7 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD13 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2635 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD13X | Nexperia | Bipolar Transistors - BJT NHUMD13/SOT363/SC-88 | auf Bestellung 4619 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD13X | Nexperia USA Inc. | Description: NHUMD13/SOT363/SC-88 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| NHUMD13X | NEXPERIA | Description: NEXPERIA - NHUMD13X - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 4.7 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD13 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2635 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD13X | Nexperia USA Inc. | Description: NHUMD13/SOT363/SC-88 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD2F | Nexperia | Bipolar Transistors - BJT NHUMD2/SOT363/SC-88 | auf Bestellung 9366 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD2F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 29500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD2F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD2X | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD2X | NEXPERIA | Description: NEXPERIA - NHUMD2X - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 22 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 22kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 22kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD2 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD2X | Nexperia | Bipolar Transistors - BJT NHUMD2/SOT363/SC-88 | auf Bestellung 10935 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD2X | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18080 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD2X | NEXPERIA | Description: NEXPERIA - NHUMD2X - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 22 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 22kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 22kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD2 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD3 | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD3F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 18175 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD3F | NEXPERIA | Description: NEXPERIA - NHUMD3F - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD3 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD3F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD3F | Nexperia | Trans Digital BJT NPN/PNP 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD3F | NEXPERIA | Description: NEXPERIA - NHUMD3F - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD3 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD3F | Nexperia | Bipolar Transistors - BJT NHUMD3/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD3X | Nexperia | Trans Digital BJT NPN/PNP 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD3X | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 17158 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD3X | NEXPERIA | Description: NEXPERIA - NHUMD3X - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD3 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD3X | Nexperia | Bipolar Transistors - BJT NHUMD3/SOT363/SC-88 | auf Bestellung 4493 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD3X | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD3X | NEXPERIA | Trans Digital BJT NPN/PNP 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD3X | NEXPERIA | Description: NEXPERIA - NHUMD3X - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD3 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD9F | NEXPERIA | Description: NEXPERIA - NHUMD9F - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD9 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9110 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD9F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 9225 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD9F | NEXPERIA | Description: NEXPERIA - NHUMD9F - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD9 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9110 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD9F | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD9F | Nexperia | Bipolar Transistors - BJT NHUMD9/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD9X | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD9X | NEXPERIA | Description: NEXPERIA - NHUMD9X - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD9 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMD9X | NEXPERIA | Trans Digital BJT NPN/PNP 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMD9X | Nexperia | Bipolar Transistors - BJT NHUMD9/SOT363/SC-88 | auf Bestellung 8898 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD9X | Nexperia USA Inc. | Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz, 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMD9X | NEXPERIA | Description: NEXPERIA - NHUMD9X - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 80 V, 80 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMD9 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 80V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH10F | Nexperia | Bipolar Transistors - BJT NHUMH10/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH10F | Nexperia USA Inc. | Description: NHUMH10/SOT363/SC-88 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| NHUMH10F | NEXPERIA | Description: NEXPERIA - NHUMH10F - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 2.2 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH10 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 8570 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH10F | Nexperia USA Inc. | Description: NHUMH10/SOT363/SC-88 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH10F | NEXPERIA | Description: NEXPERIA - NHUMH10F - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 2.2 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH10 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 8570 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH10X | Nexperia USA Inc. | Description: NHUMH10/SOT363/SC-88 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| NHUMH10X | NEXPERIA | Description: NEXPERIA - NHUMH10X - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 2.2 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH10 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1735 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH10X | Nexperia USA Inc. | Description: NHUMH10/SOT363/SC-88 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH10X | NEXPERIA | Description: NEXPERIA - NHUMH10X - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 2.2 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH10 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1735 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH10X | Nexperia | Bipolar Transistors - BJT NHUMH10/SOT363/SC-88 | auf Bestellung 3856 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH11F | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 29213 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH11F | NEXPERIA | Description: NEXPERIA - NHUMH11F - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH11 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2385 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH11F | Nexperia | Bipolar Transistors - BJT NHUMH11/SOT363/SC-88 | auf Bestellung 9670 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH11F | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH11F | NEXPERIA | Description: NEXPERIA - NHUMH11F - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH11 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2385 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH11X | NEXPERIA | Description: NEXPERIA - NHUMH11X - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH11 Series productTraceability: No Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH11X | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 19650 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH11X | NEXPERIA | Description: NEXPERIA - NHUMH11X - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH11 Series productTraceability: No Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH11X | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 17150 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH11X | Nexperia | Bipolar Transistors - BJT NHUMH11/SOT363/SC-88 | auf Bestellung 7956 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH11X | NEXPERIA | Trans Digital BJT NPN 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH13F | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 19875 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH13F | Nexperia | Bipolar Transistors - BJT NHUMH13/SOT363/SC-88 | auf Bestellung 9970 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH13F | NEXPERIA | Trans Digital BJT NPN 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH13F | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH13X | Nexperia | Bipolar Transistors - BJT NHUMH13/SOT363/SC-88 | auf Bestellung 14830 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH13X | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH13X | NEXPERIA | Description: NEXPERIA - NHUMH13X - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH13 Series productTraceability: No Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2235 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH13X | NEXPERIA | Description: NEXPERIA - NHUMH13X - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH13 Series productTraceability: No Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2235 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH13X | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH1F | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 19975 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH1F | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH1F | Nexperia | Bipolar Transistors - BJT NHUMH1/SOT363/SC-88 SOT363 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH1X | NEXPERIA | Trans Digital BJT NPN 80V 100mA 350mW Automotive AEC-Q101 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH1X | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH1X | Nexperia | Bipolar Transistors - BJT NHUMH1/SOT363/SC-88 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| NHUMH1X | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH2F | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH2F | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH2F | Nexperia | Bipolar Transistors - BJT NHUMH2/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH2X | Nexperia | Bipolar Transistors - BJT NHUMH2/SOT363/SC-88 | auf Bestellung 5883 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH2X | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH2X | NEXPERIA | Trans Digital BJT NPN 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH2X | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH9F | Nexperia | Bipolar Transistors - BJT NHUMH9/SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH9F | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH9F | NEXPERIA | Trans Digital BJT NPN 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUMH9F | NEXPERIA | Description: NEXPERIA - NHUMH9F - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH9 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH9F | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 19990 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH9F | NEXPERIA | Description: NEXPERIA - NHUMH9F - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH9 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH9X | NEXPERIA | Description: NEXPERIA - NHUMH9X - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH9 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2951 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH9X | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH9X | NEXPERIA | Description: NEXPERIA - NHUMH9X - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 80 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 80V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SC-88 Anzahl der Pins: 6 Pins Produktpalette: NHUMH9 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2951 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NHUMH9X | Nexperia | Bipolar Transistors - BJT NHUMH9/SOT363/SC-88 | auf Bestellung 5332 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH9X | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 80V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUMH9X | NEXPERIA | Trans Digital BJT NPN 80V 100mA 350mW Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NHUSB3AAB | Switchcraft | USB Connectors NH SERIES USB 3 NARROW MOD PNL | auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUSB3AAB | Switchcraft Inc. | Description: NH SERIES NARROW MODULAR PANEL C Packaging: Bulk Mounting Type: Panel Mount, Flange Convert From (Adapter End): USB-C (USB TYPE-C), Receptacle Convert To (Adapter End): USB-C (USB TYPE-C), Receptacle Part Status: Active | auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUSBAAB | Switchcraft Inc. | Description: NH SERIES NARROW MODULAR PANEL C Packaging: Bulk Mounting Type: Panel Mount, Flange Convert From (Adapter End): USB-A (USB TYPE-A), Receptacle Convert To (Adapter End): USB-A (USB TYPE-A), Receptacle Part Status: Active | auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUSBAAB | Switchcraft | USB Connectors NH SERIES USB 2 NARROW MOD PNL | auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUSBBAB | Switchcraft | USB Connectors NH SERIES USB NARROW MOD PNL | auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHUSBBAB | Switchcraft Inc. | Description: NH SERIES NARROW MODULAR PANEL C Packaging: Bulk Mounting Type: Panel Mount, Flange Convert From (Adapter End): USB-B (USB TYPE-B), Receptacle Convert To (Adapter End): USB-A (USB TYPE-A), Receptacle Part Status: Active | auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
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