Produkte > LGE
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| LGE001-R5 | auf Bestellung 540 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| LGE0126XKFEB5G | BGA | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| LGE105B-LF-SA Produktcode: 165038 | IC > IC andere | Produkt ist nicht verfügbar | ||||||||||||||||
| LGE107D-LF-T8 | LG | 0950+ | auf Bestellung 126 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE1854B-LF | LG | 07+ | auf Bestellung 16 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE1854C-LF | XD | auf Bestellung 68 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| LGE1854C-LF | LG | 0904+ | auf Bestellung 634 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE1855B-LF | QFP | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| LGE1855B-LF | QFP | auf Bestellung 240 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| LGE2005 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 50V Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K | Produkt ist nicht verfügbar | |||||||||||||||
| LGE2005 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 50V Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE201 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 100V Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K | auf Bestellung 870 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGE201 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 100V Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K Anzahl je Verpackung: 1 Stücke | auf Bestellung 870 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE202 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 200V Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K | Produkt ist nicht verfügbar | |||||||||||||||
| LGE202 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 200V Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE204 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 0.4kV Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K | Produkt ist nicht verfügbar | |||||||||||||||
| LGE204 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 0.4kV Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE206 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 0.6kV Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K | Produkt ist nicht verfügbar | |||||||||||||||
| LGE206 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 0.6kV Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE208 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 0.8kV Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K | Produkt ist nicht verfügbar | |||||||||||||||
| LGE208 | LUGUANG ELECTRONIC | Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 60A; flat Version: flat Max. off-state voltage: 0.8kV Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 60A Electrical mounting: THT Type of bridge rectifier: single-phase Case: D3K Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE210 | LUGUANG ELECTRONIC | LGE210-LGE Flat single phase diode bridge rectif. | Produkt ist nicht verfügbar | |||||||||||||||
| LGE2111A-T8 Produktcode: 74319 | IC > IC andere 8542 39 90 00 | Produkt ist nicht verfügbar | ||||||||||||||||
| LGE2300 | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23 Mounting: SMD Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: 20V Drain current: 4A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE2300 | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23 Mounting: SMD Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: 20V Drain current: 4A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| LGE2300 | LGE | Transistor N-Channel MOSFET; unipolar; 20V; 12V; 32mOhm; 4A; 1,25W; -50°C ~ 155°C; Substitute: LGE2300-LGE; LGE2300 TLGE2300 Anzahl je Verpackung: 100 Stücke | auf Bestellung 1300 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE2301 | LUGUANG ELECTRONIC | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.14Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -3A | auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGE2301 | LUGUANG ELECTRONIC | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.14Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -3A Anzahl je Verpackung: 5 Stücke | auf Bestellung 2495 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE2301 | LGE | Transistor P-Channel MOSFET; unipolar; -20V; 12V; 140mOhm; -3A; 1W; -55°C ~ 150°C; Substitute: LGE2301-LGE; LGE2301 TLGE2301 Anzahl je Verpackung: 100 Stücke | auf Bestellung 2630 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE2302 | LGE | Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23 LGE2302-LGE LGE2302 TLGE2302 Anzahl je Verpackung: 100 Stücke | auf Bestellung 1875 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE2302 | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Power dissipation: 0.35W Kind of package: reel; tape Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 2.1A On-state resistance: 0.115Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke | auf Bestellung 2910 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE2302 | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Power dissipation: 0.35W Kind of package: reel; tape Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 2.1A On-state resistance: 0.115Ω Type of transistor: N-MOSFET | auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGE2304 | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 0.35W; SOT23 Mounting: SMD On-state resistance: 75mΩ Power dissipation: 0.35W Gate charge: 6.7nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 | auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGE2304 | LGE | Tranzystor N-Channel MOSFET; unipolar; 30V; 20V; 75mOhm; 3,3A; 0,35W; -50°C ~ 155°C; Substitute: LGE2304-LGE; LGE2304 TLGE2304 Anzahl je Verpackung: 100 Stücke | auf Bestellung 2790 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE2304 | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 0.35W; SOT23 Mounting: SMD On-state resistance: 75mΩ Power dissipation: 0.35W Gate charge: 6.7nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 Anzahl je Verpackung: 5 Stücke | auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE2305 | LGE | Transistor P-Channel MOSFET; unipolar; -20V; 8V; 75mOhm; -4,1A; 1,7W; -55°C ~ 155°C; Substitute: LGE2305-LGE; LGE2305 TLGE2305 Anzahl je Verpackung: 100 Stücke | auf Bestellung 2800 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE2305 | LUGUANG ELECTRONIC | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23 Mounting: SMD Gate-source voltage: ±8V Case: SOT23 Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.8nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| LGE2305 | LUGUANG ELECTRONIC | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23 Mounting: SMD Gate-source voltage: ±8V Case: SOT23 Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.8nC Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE2312 | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 31mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Drain-source voltage: 20V Drain current: 4.9A Anzahl je Verpackung: 5 Stücke | auf Bestellung 3655 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE2312 | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 31mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Drain-source voltage: 20V Drain current: 4.9A | auf Bestellung 3655 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGE2312 | LGE | Transistor N-Channel MOSFET; unipolar; 20V; 10V; 31mOhm; 4,9A; 1,25W; -55°C ~ 155°C; Substitute: LGE2312-LGE; LGE2312 TLGE2312 Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGE3159A-LF-S1 | LG | 0951+ | auf Bestellung 1014 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE3368A-LF-SF | LG | 0951+ | auf Bestellung 1303 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE3369A-LF-SE | LG | 1011+ BGA | auf Bestellung 213 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE3369A-LF-SE | LG | 09+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE3556C | BROADCOM | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| LGE3556C Produktcode: 154764 | IC > IC andere | Produkt ist nicht verfügbar | ||||||||||||||||
| LGE3765A-LF-S1 | LG | 0949+ | auf Bestellung 526 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE3D02120F | LUGUANG ELECTRONIC | LGE3D02120F SMD Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D05120A | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO220-2 Kind of package: tube Leakage current: 11µA Max. forward impulse current: 55A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D05120A | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO220-2 Kind of package: tube Leakage current: 11µA Max. forward impulse current: 55A | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D06065A | LUGUANG ELECTRONIC | LGE3D06065A THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D06065F | LUGUANG ELECTRONIC | LGE3D06065F SMD Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D06065G | LUGUANG ELECTRONIC | LGE3D06065G SMD Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D06065N | LUGUANG ELECTRONIC | LGE3D06065N SMD Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D10065A | LUGUANG ELECTRONIC | LGE3D10065A THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D10065E | LUGUANG ELECTRONIC | LGE3D10065E SMD Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D10065F | LUGUANG ELECTRONIC | LGE3D10065F SMD Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D10065G | LUGUANG ELECTRONIC | LGE3D10065G SMD Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D10065H | LUGUANG ELECTRONIC | LGE3D10065H THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D10170H | LUGUANG ELECTRONIC | LGE3D10170H THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D15065A | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 135A Max. forward voltage: 1.7V Leakage current: 10µA | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D15065A | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 135A Max. forward voltage: 1.7V Leakage current: 10µA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20065A | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Max. load current: 100A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.7V Leakage current: 0.25mA | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20065A | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Max. load current: 100A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.7V Leakage current: 0.25mA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20065D | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 1.65V Leakage current: 10µA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20065D | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 1.65V Leakage current: 10µA | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20065H | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Max. load current: 100A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.7V Leakage current: 0.25mA | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20065H | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Max. load current: 100A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.7V Leakage current: 0.25mA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20120A | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 2.2V Leakage current: 50µA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20120A | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 2.2V Leakage current: 50µA | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20120D | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 2V Leakage current: 30µA | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20120D | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 2V Leakage current: 30µA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20120H | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Max. load current: 100A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 130A Max. forward voltage: 2V Leakage current: 50µA | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20120H | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Max. load current: 100A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 130A Max. forward voltage: 2V Leakage current: 50µA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D20170H | LUGUANG ELECTRONIC | LGE3D20170H THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D30065D | LUGUANG ELECTRONIC | LGE3D30065D THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D30065H | LUGUANG ELECTRONIC | LGE3D30065H THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D30120D | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 274A Max. forward voltage: 2.2V Leakage current: 20µA | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D30120D | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 274A Max. forward voltage: 2.2V Leakage current: 20µA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D30120H | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Max. load current: 190A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 220A Max. forward voltage: 1.95V Leakage current: 0.1mA | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D30120H | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Max. load current: 190A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 220A Max. forward voltage: 1.95V Leakage current: 0.1mA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D40065H | LUGUANG ELECTRONIC | LGE3D40065H THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D40120H | LUGUANG ELECTRONIC | LGE3D40120H THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D42090H | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 900V; 42A; TO247-2; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-2 Max. off-state voltage: 900V Max. load current: 200A Max. forward voltage: 1.9V Load current: 42A Semiconductor structure: single diode Max. forward impulse current: 230A Leakage current: 0.16mA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D42090H | LUGUANG ELECTRONIC | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 900V; 42A; TO247-2; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-2 Max. off-state voltage: 900V Max. load current: 200A Max. forward voltage: 1.9V Load current: 42A Semiconductor structure: single diode Max. forward impulse current: 230A Leakage current: 0.16mA | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3D50120H | LUGUANG ELECTRONIC | LGE3D50120H THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M14120Q | LUGUANG ELECTRONIC | LGE3M14120Q THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M160120B | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W Mounting: THT Case: TO247-3 Polarisation: unipolar Power dissipation: 134W Kind of package: tube Gate charge: 43nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 48A Drain-source voltage: 1.2kV Drain current: 14A On-state resistance: 0.285Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M160120B | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W Mounting: THT Case: TO247-3 Polarisation: unipolar Power dissipation: 134W Kind of package: tube Gate charge: 43nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 48A Drain-source voltage: 1.2kV Drain current: 14A On-state resistance: 0.285Ω Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M160120E | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W Mounting: SMD Case: D2PAK Polarisation: unipolar Power dissipation: 127W Kind of package: reel; tape Gate charge: 42nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 38A Drain-source voltage: 1.2kV Drain current: 11A On-state resistance: 0.285Ω Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M160120E | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W Mounting: SMD Case: D2PAK Polarisation: unipolar Power dissipation: 127W Kind of package: reel; tape Gate charge: 42nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 38A Drain-source voltage: 1.2kV Drain current: 11A On-state resistance: 0.285Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M160120Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 50A; 138W Mounting: THT Case: TO247-4 Polarisation: unipolar Power dissipation: 138W Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 43nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 50A Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M160120Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 50A; 138W Mounting: THT Case: TO247-4 Polarisation: unipolar Power dissipation: 138W Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 43nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 50A Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.25Ω Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M18120Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W Case: TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 235nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 220A Drain-source voltage: 1.2kV Drain current: 74A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 428W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M18120Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W Case: TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 235nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 220A Drain-source voltage: 1.2kV Drain current: 74A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 428W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M1K170B | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.5A Pulsed drain current: 6A Power dissipation: 69W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 21.8nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M1K170B | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.5A Pulsed drain current: 6A Power dissipation: 69W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 21.8nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M20120Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4 Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 254nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 428W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M20120Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4 Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 254nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 428W | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M25120Q | LUGUANG ELECTRONIC | LGE3M25120Q THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M28065Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 163nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 211A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 67A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 326W | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M28065Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 163nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 211A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 67A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 326W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M30065B | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W Mounting: THT Drain current: 64A On-state resistance: 55mΩ Type of transistor: N-MOSFET Case: TO247-3 Power dissipation: 326W Polarisation: unipolar Kind of package: tube Gate charge: 147nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 212A Drain-source voltage: 650V | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M30065B | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W Mounting: THT Drain current: 64A On-state resistance: 55mΩ Type of transistor: N-MOSFET Case: TO247-3 Power dissipation: 326W Polarisation: unipolar Kind of package: tube Gate charge: 147nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 212A Drain-source voltage: 650V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M30065Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W Mounting: THT Drain current: 54A On-state resistance: 45mΩ Type of transistor: N-MOSFET Case: TO247-4 Power dissipation: 300W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 170A Drain-source voltage: 650V | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M30065Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W Mounting: THT Drain current: 54A On-state resistance: 45mΩ Type of transistor: N-MOSFET Case: TO247-4 Power dissipation: 300W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 170A Drain-source voltage: 650V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M35065Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 30nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...18V Pulsed drain current: 130A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 40A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 370W | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M35065Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 30nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...18V Pulsed drain current: 130A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 40A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 370W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M35120Q | LUGUANG ELECTRONIC | LGE3M35120Q THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M40065B | LUGUANG ELECTRONIC | LGE3M40065B THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M40065Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 110.8nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 180A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 58A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 348W | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M40065Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 110.8nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 180A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 58A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 348W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M40120Q | LUGUANG ELECTRONIC | LGE3M40120Q THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M45170B | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Case: TO247-3 Mounting: THT Gate charge: 54nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M45170B | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Case: TO247-3 Mounting: THT Gate charge: 54nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M45170Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M45170Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M50120B | LUGUANG ELECTRONIC | LGE3M50120B THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M50120Q | LUGUANG ELECTRONIC | LGE3M50120Q THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M60065Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W Case: TO247-4 Kind of package: tube Features of semiconductor devices: Kelvin terminal Mounting: THT Technology: SiC On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 208W Polarisation: unipolar Gate charge: 78nC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 97A Drain-source voltage: 650V Drain current: 36A | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M60065Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W Case: TO247-4 Kind of package: tube Features of semiconductor devices: Kelvin terminal Mounting: THT Technology: SiC On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 208W Polarisation: unipolar Gate charge: 78nC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 97A Drain-source voltage: 650V Drain current: 36A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M70120Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Power dissipation: 200W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 69nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 85A Mounting: THT Case: TO247-4 | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M70120Q | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Power dissipation: 200W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 69nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 85A Mounting: THT Case: TO247-4 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M80120B | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 28A Pulsed drain current: 80A Power dissipation: 208W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 0.129Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M80120B | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 28A Pulsed drain current: 80A Power dissipation: 208W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 0.129Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M80120J | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 23A; 136W; D2PAK-7 Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: Kelvin terminal Gate charge: 20.8nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -3...15V Mounting: SMD Case: D2PAK-7 Drain-source voltage: 1.2kV Drain current: 23A On-state resistance: 96mΩ Type of transistor: N-MOSFET Power dissipation: 136W | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M80120J | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 23A; 136W; D2PAK-7 Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: Kelvin terminal Gate charge: 20.8nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -3...15V Mounting: SMD Case: D2PAK-7 Drain-source voltage: 1.2kV Drain current: 23A On-state resistance: 96mΩ Type of transistor: N-MOSFET Power dissipation: 136W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGE3M80120Q | LUGUANG ELECTRONIC | LGE3M80120Q THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| LGE537-LF | LG | 07+ | auf Bestellung 192 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE6891DD-LF | LG | 08+ | auf Bestellung 148 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE6991DD-LF-1 | QFP | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| LGE6991DD-LF-1 | QFP | auf Bestellung 240 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| LGE7327A-LF | LG | 09+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE7329A-LF | auf Bestellung 2200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| LGE7353C-LF | XD | auf Bestellung 108 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| LGE7363C-LF Produktcode: 112409 | IC > IC andere | Produkt ist nicht verfügbar | ||||||||||||||||
| LGE7363C-LF | LG | 0839+ | auf Bestellung 3936 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE7636C-LF | LG | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| LGE81C1404-HG030 | LG | TSOP | auf Bestellung 22 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE9655-LF | LG | 07+ | auf Bestellung 1013 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE9655-LF | LG | QFP | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE9655-LF | LG | 09+ | auf Bestellung 2514 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE9689AD | LG | O652 | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE9689AD-LF | LG | 08+ | auf Bestellung 1461 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE9789AD | LG | 06+ | auf Bestellung 336 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGE9789AD-LF | LG | 07+ | auf Bestellung 2053 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| LGEA1117-1.5 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1% Case: SOT89 Mounting: SMD Kind of package: reel; tape Output current: 1A Operating temperature: 0...125°C Input voltage: 3...10V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±1% Output voltage: 1.5V Voltage drop: 1.15V Type of integrated circuit: voltage regulator Number of channels: 1 Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGEA1117-1.5 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1% Case: SOT89 Mounting: SMD Kind of package: reel; tape Output current: 1A Operating temperature: 0...125°C Input voltage: 3...10V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±1% Output voltage: 1.5V Voltage drop: 1.15V Type of integrated circuit: voltage regulator Number of channels: 1 | Produkt ist nicht verfügbar | |||||||||||||||
| LGEA1117-1.8 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1% Case: SOT89 Mounting: SMD Kind of package: reel; tape Output current: 1A Operating temperature: 0...125°C Input voltage: 3.2...10V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±1% Output voltage: 1.8V Voltage drop: 1.15V Type of integrated circuit: voltage regulator Number of channels: 1 | Produkt ist nicht verfügbar | |||||||||||||||
| LGEA1117-1.8 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1% Case: SOT89 Mounting: SMD Kind of package: reel; tape Output current: 1A Operating temperature: 0...125°C Input voltage: 3.2...10V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±1% Output voltage: 1.8V Voltage drop: 1.15V Type of integrated circuit: voltage regulator Number of channels: 1 Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGEA1117-2.5 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1% Case: SOT89 Mounting: SMD Kind of package: reel; tape Output current: 1A Operating temperature: 0...125°C Input voltage: 3.9...10V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±1% Output voltage: 2.5V Voltage drop: 1.15V Type of integrated circuit: voltage regulator Number of channels: 1 Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGEA1117-2.5 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1% Case: SOT89 Mounting: SMD Kind of package: reel; tape Output current: 1A Operating temperature: 0...125°C Input voltage: 3.9...10V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±1% Output voltage: 2.5V Voltage drop: 1.15V Type of integrated circuit: voltage regulator Number of channels: 1 | Produkt ist nicht verfügbar | |||||||||||||||
| LGEA1117-3.3 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V Anzahl je Verpackung: 5 Stücke | auf Bestellung 295 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGEA1117-3.3 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V | auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGEA1117-3.3 | LGE | IC: voltage regulator; LDO,linear,fixed; 3,3V; 1A LGEA1117-3.3 STLGEA1117-3.3 LGE | auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||
| LGEA1117-5.0 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V Anzahl je Verpackung: 5 Stücke | auf Bestellung 750 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGEA1117-5.0 | LGE | IC: voltage regulator; LDO,linear,fixed; 5V; 1A LGEA1117-5.0 STLGEA1117-5.0 LGE | auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||
| LGEA1117-5.0 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGEA1117-ADJ | LGE | (polish version) IC: stabilizator napi?cia; LDO,liniowy,regulowany; 1,25?12V; 1A LGEA1117-ADJ-LGE STLGEA1117-ADJ LGE | auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||
| LGEA1117-ADJ | LUGUANG ELECTRONIC | Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Anzahl je Verpackung: 5 Stücke | auf Bestellung 990 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGEA1117-ADJ | LUGUANG ELECTRONIC | Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGEGPI1200WJL1.0 | auf Bestellung 2300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| LGET1117-1.5 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Operating temperature: 0...125°C Kind of package: reel; tape Output current: 1A Voltage drop: 1.15V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 3...10V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT223 Tolerance: ±1% Output voltage: 1.5V | Produkt ist nicht verfügbar | |||||||||||||||
| LGET1117-1.5 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Operating temperature: 0...125°C Kind of package: reel; tape Output current: 1A Voltage drop: 1.15V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 3...10V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT223 Tolerance: ±1% Output voltage: 1.5V Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGET1117-1.8 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.2...10V | Produkt ist nicht verfügbar | |||||||||||||||
| LGET1117-1.8 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.2...10V Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGET1117-2.5 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 2.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.9...10V | Produkt ist nicht verfügbar | |||||||||||||||
| LGET1117-2.5 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 2.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.9...10V Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| LGET1117-3.3 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V Anzahl je Verpackung: 5 Stücke | auf Bestellung 2770 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGET1117-3.3 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V | auf Bestellung 2770 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGET1117-5.0 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V | auf Bestellung 3370 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGET1117-5.0 | LUGUANG ELECTRONIC | Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V Anzahl je Verpackung: 5 Stücke | auf Bestellung 3370 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGET1117-ADJ | LUGUANG ELECTRONIC | Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V | auf Bestellung 3190 Stücke: Lieferzeit 14-21 Tag (e) |
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| LGET1117-ADJ | LUGUANG ELECTRONIC | Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Anzahl je Verpackung: 5 Stücke | auf Bestellung 3190 Stücke: Lieferzeit 7-14 Tag (e) |
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| LGETB-1-V0.5(L341I) | LG | ?? | auf Bestellung 18 Stücke: Lieferzeit 21-28 Tag (e) |