Produkte > KSB
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
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| KSB-113G | ABB | Description: ABB - KSB-113G - Signalleuchte, Xenon, Blitzlicht, grün, 115VAC, 75mm Linsenfarbe: Grün Versorgungsspannung, V AC: 115 Optisches Signal: Blitzlicht Nennleistung: - Betriebstemperatur, min.: -20 IP- / NEMA-Schutzart: IP54 Außenhöhe: 56 Produktpalette: KSB Series Versorgungsspannung, V DC: - Linsendurchmesser: 68 Betriebstemperatur, max.: 50 SVHC: No SVHC (07-Jul-2017) | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB-203C | ABB | Description: ABB - KSB-203C - Signalleuchte, Xenon, Blitzlicht, farblos, 24VDC, 75mm Linsenfarbe: Transparent Versorgungsspannung, V AC: - Optisches Signal: Blitzlicht Nennleistung: - Betriebstemperatur, min.: -20 IP- / NEMA-Schutzart: IP54 Außenhöhe: 56 Produktpalette: KSB Series Versorgungsspannung, V DC: 24 Linsendurchmesser: 68 Betriebstemperatur, max.: 50 SVHC: No SVHC (07-Jul-2017) | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB-305G | ABB | Description: ABB - KSB-305G - Signalleuchte, LED, Dauerlicht, grün, 24V AC/DC, 75mm Linsenfarbe: Grün Versorgungsspannung, V AC: 24 Optisches Signal: Durchgängig leuchtend Nennleistung: - Betriebstemperatur, min.: -20 IP- / NEMA-Schutzart: IP54 Außenhöhe: 56 Produktpalette: KSB Series Versorgungsspannung, V DC: 24 Linsendurchmesser: 68 Betriebstemperatur, max.: 50 SVHC: No SVHC (07-Jul-2017) | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB-305R | ABB | Description: ABB - KSB-305R - Signalleuchte, LED, Dauerlicht, rot, 24V AC/DC, 75mm Linsenfarbe: Rot Versorgungsspannung, V AC: 24 Optisches Signal: Durchgängig leuchtend Nennleistung: - Betriebstemperatur, min.: -20 IP- / NEMA-Schutzart: IP54 Außenhöhe: 56 Produktpalette: KSB Series Versorgungsspannung, V DC: 24 Linsendurchmesser: 68 Betriebstemperatur, max.: 50 SVHC: No SVHC (07-Jul-2017) | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB-305Y | ABB | Description: ABB - KSB-305Y - Signalleuchte, LED, Dauerlicht, gelb, 24V AC/DC, 75mm Linsenfarbe: Gelb Versorgungsspannung, V AC: 24 Optisches Signal: Durchgängig leuchtend Nennleistung: - Betriebstemperatur, min.: -20 IP- / NEMA-Schutzart: IP54 Außenhöhe: 56 Produktpalette: KSB Series Versorgungsspannung, V DC: 24 Linsendurchmesser: 68 Betriebstemperatur, max.: 50 SVHC: No SVHC (07-Jul-2017) | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB001 | Hartmann | Pluggable Terminal Blocks | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB0405HBF0D | Delta Electronics | Blowers & Centrifugal Fans Blower Frameless Fan, 40x8.5mm, Sleeve, 4Leads, Lock Rotor Sensor, Tach/PWM | auf Bestellung 831 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB0405HBF0D | Delta Electronics | Description: FAN IMP MTR FRAMEL 42X8.5MM 5VDC Features: Locked Rotor Protection, PWM Control, Speed Sensor (Tach) Packaging: Box Voltage - Rated: 5VDC Size / Dimension: Round - 42mm Dia Bearing Type: Sleeve RPM: 3150 RPM Air Flow: 1.2 CFM (0.034m³/min) Width: 8.50mm Weight: 0.022 lb (9.98 g) Operating Temperature: 32 ~ 158°F (0 ~ 70°C) Termination: 4 Wire Leads Approval Agency: CE, cURus, VDE Fan Type: Motorized Impellers, Frameless Noise: 31.0dB(A) Static Pressure: 0.090 in H2O (22.4 Pa) Part Status: Active Power (Watts): 800 mW | auf Bestellung 2017 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB0M110LFT | C&K | Tactile Switches Tact | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB0M410 | C&K Components | Description: SWITCH TACTILE SPST-NO 0.05A 50V | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB0M410LFT | C&K | Tactile Switches N.O. SPST PC Pins 0.05A 32VDC 1W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB0M410LFT | C&K Components | Description: SWITCH TACTILE SPST-NO 0.05A 50V | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB0M430LFT | C&K | Tactile Switches Tact | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1015 | onsemi | onsemi PNP/3A/60V TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1015O | Fairchild Semiconductor | Description: TRANS PNP 60V 3A TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1015OTU | Fairchild Semiconductor | Description: TRANS PNP 60V 3A TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1015Y | onsemi | Description: TRANS PNP 60V 3A TO220F-3 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220F-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 25 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1015YTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | auf Bestellung 7431 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1015YTU | ONSEMI | Description: ONSEMI - KSB1015YTU - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 3 A, 25 W, TO-220F, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 3A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 25W Bauform - Transistor: TO-220F Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 60V productTraceability: No Wandlerpolarität: PNP Übergangsfrequenz: 9MHz Betriebstemperatur, max.: 150°C SVHC: Lead (23-Jan-2024) | auf Bestellung 318 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| KSB1015YTU | Fairchild Semiconductor | Description: POWER BIPOLAR TRANSISTOR, 3A, 60 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 25 W | auf Bestellung 735 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1015YTU | ON Semiconductor | Trans GP BJT PNP 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube | auf Bestellung 4719 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB1015YTU | ON Semiconductor | Trans GP BJT PNP 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1017YTU | onsemi / Fairchild | Ethernet ICs 3-Port 10/100 Switch w/ Transceivers & Frame Buffers | auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1017YTU | onsemi | Description: TRANS PNP 80V 4A TO220F-3 | auf Bestellung 883 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1022TU | onsemi | Description: TRANS PNP DARL 60V 7A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 14mA, 7A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1023TU | onsemi | Description: TRANS PNP DARL 40V 3A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 2 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1097OTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1097RTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1097YTU | ON Semiconductor | Trans GP BJT PNP 60V 7A 2000mW 3-Pin(3+Tab) TO-220F Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1098OTU | ON Semiconductor | Trans Darlington PNP 100V 5A 2000mW 3-Pin(3+Tab) TO-220F Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1098OTU | onsemi | Description: TRANS PNP DARL 100V 5A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 2V Supplier Device Package: TO-220F-3 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1098RTU | onsemi | Description: TRANS PNP DARL 100V 5A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V Supplier Device Package: TO-220F-3 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1098RTU | ON Semiconductor | Trans Darlington PNP 100V 5A 2000mW 3-Pin(3+Tab) TO-220F Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1098YTU | ON Semiconductor | Trans Darlington PNP 100V 5A 2000mW 3-Pin(3+Tab) TO-220F Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1098YTU | onsemi | Description: TRANS PNP DARL 100V 5A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 3A, 2V Supplier Device Package: TO-220F-3 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116AGBU | Fairchild Semiconductor | Description: TRANS PNP 60V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW | auf Bestellung 9043 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1116AGBU | onsemi | Description: TRANS PNP 60V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116AGTA | onsemi | Description: TRANS PNP 60V 1A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116AGTA | ON Semiconductor | Trans GP BJT PNP 60V 1A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116ALBU | onsemi | Description: TRANS PNP 60V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116ALTA | onsemi | Description: TRANS PNP 60V 1A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116AYBU | onsemi | Description: TRANS PNP 60V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116AYTA | Fairchild Semiconductor | Description: TRANS PNP 60V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW | auf Bestellung 229957 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1116AYTA | ON Semiconductor | Trans GP BJT PNP 60V 1A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116GBU | onsemi | Description: TRANS PNP 50V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116GTA | onsemi | Description: TRANS PNP 50V 1A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116LBU | onsemi | Description: TRANS PNP 50V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116LTA | onsemi | Description: TRANS PNP 50V 1A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116SYBU | Fairchild Semiconductor | Description: TRANS PNP 50V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1116SYTA | Fairchild Semiconductor | Description: TRANS PNP 50V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1116YBU | onsemi | Description: TRANS PNP 50V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1116YTA | Fairchild Semiconductor | Description: TRANS PNP 50V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW | auf Bestellung 7129 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1116YTA | ON Semiconductor | Trans GP BJT PNP 50V 1A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1121-STF | 3 SOT-89 | auf Bestellung 3930 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB1121STF | Fairchild Semiconductor | Description: TRANS PNP 25V 2A SOT-89 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1121STF FA | FAIRCHILD | auf Bestellung 112000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB1121STM | Fairchild Semiconductor | Description: TRANS PNP 25V 2A SOT-89 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1121TTF | Fairchild Semiconductor | Description: TRANS PNP 25V 2A SOT-89 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1149-Y | Samsung | auf Bestellung 34500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB1149OS | onsemi | Description: TRANS PNP DARL 100V 3A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 2V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.3 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1149OSTU | onsemi | Description: TRANS PNP DARL 100V 3A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 2V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.3 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1149YS | ON Semiconductor | Description: TRANS PNP DARL 100V 3A TO-126 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1149YSTU | ON Semiconductor | Description: TRANS PNP DARL 100V 3A TO-126 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151 | onsemi | onsemi PNP/5A/60V TO-126 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YS | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | auf Bestellung 22335 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1151YS | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Bag | auf Bestellung 1392 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB1151YS | Fairchild Semiconductor | Description: POWER BIPOLAR TRANSISTOR, 5A, 60 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W | auf Bestellung 1370 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1151YS | ONSEMI | Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Current gain: 160...320 Mounting: THT Pulsed collector current: 8A Kind of package: bulk Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YS | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Bag | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YS Produktcode: 73229 | Transistoren > Bipolar-Transistoren PNP | Produkt ist nicht verfügbar | ||||||||||||||||||
| KSB1151YS | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Bag | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YS | onsemi | Description: TRANS PNP 60V 5A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W | auf Bestellung 561 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1151YS | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Bag | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YS | ONSEMI | Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Current gain: 160...320 Mounting: THT Pulsed collector current: 8A Kind of package: bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YS | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Bag | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YS | ONSEMI | Description: ONSEMI - KSB1151YS - PNP EPITAXIAL SILICON TRANSISTOR SVHC: Lead (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YSTSSTU | ON Semiconductor | Trans GP BJT PNP 60V 5A 3-Pin(3+Tab) TO-126 Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YSTSSTU | Fairchild Semiconductor | Description: TRANS PNP 60V 5A TO-126 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YSTSTU | Fairchild Semiconductor | Description: TRANS PNP 60V 5A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W | auf Bestellung 5760 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1151YSTSTU | ONSEMI | Description: ONSEMI - KSB1151YSTSTU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 5760 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| KSB1151YSTSTU | ON Semiconductor / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil Short Leads | auf Bestellung 2878 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| KSB1151YSTSTU | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YSTSTU | onsemi | Description: TRANS PNP 60V 5A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YSTU | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube | auf Bestellung 1441 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB1151YSTU | Fairchild Semiconductor | Description: TRANS PNP 60V 5A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W | auf Bestellung 11033 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1151YSTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | auf Bestellung 576 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1151YSTU | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YSTU | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YSTU | ONSEMI | Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Current gain: 160...320 Mounting: THT Pulsed collector current: 8A Kind of package: tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YSTU | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YSTU | onsemi | Description: TRANS PNP 60V 5A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W | auf Bestellung 851 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1151YSTU | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube | auf Bestellung 1441 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB1151YSTU | ON Semiconductor | Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1151YSTU | ONSEMI | Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Current gain: 160...320 Mounting: THT Pulsed collector current: 8A Kind of package: tube Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1212ME-03P1 | Delta Electronics | Description: BLOWER 167X43.2MM 12VDC IP51 Features: Locked Rotor Protection, PWM Control, Speed Sensor (Tach) Packaging: Box Voltage - Rated: 12VDC Size / Dimension: Round - 167mm Dia Bearing Type: Superflo RPM: 1800 RPM Air Flow: 44.9 CFM (1.26m³/min) Width: 43.20mm Operating Temperature: -40°C ~ 40°C Termination: 4 Wire Leads Approval Agency: CE, cURus, TUV Ingress Protection: IP51 - Dust Protected Fan Type: Blower Noise: 36.2dB(A) Static Pressure: 0.300 in H2O (74.7 Pa) Part Status: Active Power (Watts): 2.28 W | auf Bestellung 572 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1212ME-03P1 | Delta Electronics | DC Fans DC Fan, 120x120x38mm, 12VDC, 47CFM, 1.44W, 33.5dBA, Superflo, Tach/PWM, IP51 | auf Bestellung 315 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB13060 | NIEC | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB13060 | PRX | 600A/300V/GTR/1U | auf Bestellung 55 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB13060 | module | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB13060 | PRX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB13060 | PRX | MODULE | auf Bestellung 251 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB1366 | onsemi | onsemi PNP/3A/60V TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1366G | onsemi | Description: TRANS PNP 60V 3A TO220F-3 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1366GTU Produktcode: 144685 | Transistoren > Bipolar-Transistoren PNP | Produkt ist nicht verfügbar | ||||||||||||||||||
| KSB1366GTU | ONSEMI | Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP Case: TO220FP Frequency: 9MHz Power dissipation: 2W Polarisation: bipolar Kind of package: tube Collector current: 3A Mounting: THT Type of transistor: PNP Current gain: 150...320 Collector-emitter voltage: 60V | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1366GTU | ONSEMI | Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP Case: TO220FP Frequency: 9MHz Power dissipation: 2W Polarisation: bipolar Kind of package: tube Collector current: 3A Mounting: THT Type of transistor: PNP Current gain: 150...320 Collector-emitter voltage: 60V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1366GTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | auf Bestellung 11717 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1366GTU | ONSEMI | Description: ONSEMI - KSB1366GTU - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 3 A, 25 W, TO-220F, Durchsteckmontage Transistormontage: Durchsteckmontage DC-Stromverstärkung hFE: 150 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 25 Übergangsfrequenz ft: 9 Bauform - Transistor: TO-220F Kollektor-Emitter-Spannung V(br)ceo: 60 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: PNP DC-Kollektorstrom: 3 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1366GTU | auf Bestellung 6100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| KSB1366GTU | ON Semiconductor | Trans GP BJT PNP 60V 3A 2000mW 3-Pin(3+Tab) TO-220FP Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB1366GTU | onsemi | Description: TRANS PNP 60V 3A TO-220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W | auf Bestellung 12779 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1366GTU | ON Semiconductor | Trans GP BJT PNP 60V 3A 2000mW 3-Pin(3+Tab) TO-220FP Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1366Y | onsemi | Description: TRANS PNP 60V 3A TO220F-3 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1366Y | ON Semiconductor | Trans GP BJT PNP 60V 3A 2000mW 3-Pin(3+Tab) TO-220F Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1366YTU | onsemi | Description: TRANS PNP 60V 3A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB1366YTU | ON Semiconductor | Trans GP BJT PNP 60V 3A 2000mW 3-Pin(3+Tab) TO-220F Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB16F2 FH T106 | ROHM | SOT23/SOT323 | auf Bestellung 2959 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB23020 | PRX | MODULE | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB23020 | MITSUBISHI | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB23020 | PRX | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB23020 | PRX | F2-3 | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB23020 | PRX | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB23020 | PRX | 200A/300V/GTR/1U | auf Bestellung 55 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB23030 | PRX | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB23030 | PRX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB23030 | PRX | 300A/300V/GTR | auf Bestellung 55 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB26060 | PRX | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB546 | onsemi | onsemi PNP/2A/150V TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB546O | onsemi | Description: TRANS PNP 150V 2A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 400mA, 10V Frequency - Transition: 5MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 25 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB546Y | onsemi | Description: TRANS PNP 150V 2A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 400mA, 10V Frequency - Transition: 5MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 25 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB546YTU | ON Semiconductor | Trans GP BJT PNP 150V 2A 25000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB546YTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | auf Bestellung 1000 Stücke: Lieferzeit 561-565 Tag (e) |
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| KSB546YTU | ON Semiconductor | Trans GP BJT PNP 150V 2A 25000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB546YTU | ON Semiconductor | Trans GP BJT PNP 150V 2A 25000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB546YTU | ON Semiconductor | Trans GP BJT PNP 150V 2A 25000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB546YTU | ON Semiconductor | Trans GP BJT PNP 150V 2A 25000mW 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB546YTU | onsemi | Description: TRANS PNP 150V 2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 400mA, 10V Frequency - Transition: 5MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 25 W | auf Bestellung 3185 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB564A | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564A-G | Samsung | auf Bestellung 658000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB564A-Y | auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| KSB564AC-Y | FAIRCHILD | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB564ACGBU | ON Semiconductor | Trans GP BJT PNP 25V 1A 3-Pin TO-92 Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564ACGBU | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | auf Bestellung 4798 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB564ACGTA | onsemi | Description: TRANS PNP 25V 1A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564ACGTA | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564ACGTA | ON Semiconductor | Trans GP BJT PNP 25V 1A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564ACOBU | onsemi | Description: TRANS PNP 25V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564ACOTA | onsemi | Description: TRANS PNP 25V 1A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564ACYBU | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | auf Bestellung 92534 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB564ACYBU | ON Semiconductor | Trans GP BJT PNP 25V 1A 3-Pin TO-92 Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564ACYBU | ONSEMI | Description: ONSEMI - KSB564ACYBU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 92534 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| KSB564ACYTA | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | auf Bestellung 1372000 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB564ACYTA | ON Semiconductor | Trans GP BJT PNP 25V 1A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564ACYTA | ONSEMI | Description: ONSEMI - KSB564ACYTA - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1624092 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| KSB564AGBU | onsemi | Description: TRANS PNP 25V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564AGTA | onsemi | Description: TRANS PNP 25V 1A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564AOBU | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564AOBU | onsemi | Description: TRANS PNP 25V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564AOTA | onsemi | Description: TRANS PNP 25V 1A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564AYBU | onsemi | Description: TRANS PNP 25V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB564AYBU | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| KSB564AYTA | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 800 mW | auf Bestellung 11903 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB564AYTA | ONSEMI | Description: ONSEMI - KSB564AYTA - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 13903 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| KSB596-Y | auf Bestellung 16625 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| KSB596O | Fairchild Semiconductor | Description: TRANS PNP 80V 4A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB596OTU | Fairchild Semiconductor | Description: TRANS PNP 80V 4A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB596Y | Fairchild Semiconductor | Description: TRANS PNP 80V 4A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB596YTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | auf Bestellung 3556 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB596YTU | ONSEMI | Description: ONSEMI - KSB596YTU - Bipolarer Einzeltransistor (BJT), PNP, 80 V, 4 A, 30 W, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage DC-Stromverstärkung hFE: 120 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 30 Übergangsfrequenz ft: 3 Bauform - Transistor: TO-220 Kollektor-Emitter-Spannung V(br)ceo: 80 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: PNP DC-Kollektorstrom: 4 Betriebstemperatur, max.: 150 SVHC: Lead (17-Jan-2022) | auf Bestellung 1224 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| KSB596YTU | onsemi | Description: TRANS PNP 80V 4A TO220-3 | auf Bestellung 3914 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB596YTU | ON Semiconductor | Trans GP BJT PNP 80V 4A 30000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB601OTU | onsemi | Description: TRANS PNP DARL 100V 5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 2V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB601Y | ON Semiconductor | Trans Darlington PNP 100V 5A 1500mW 3-Pin(3+Tab) TO-220 Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB601Y | onsemi | Description: TRANS PNP DARL 100V 5A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 3A, 2V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB601YTSTU | onsemi | Description: TRANS PNP DARL 100V 5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 3A, 2V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB601YTSTU | ON Semiconductor | Trans Darlington PNP 100V 5A 1500mW 3-Pin(3+Tab) TO-220 Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB601YTU | ON Semiconductor | Trans Darlington PNP 100V 5A 1500mW 3-Pin(3+Tab) TO-220 Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB601YTU | Fairchild Semiconductor | Description: TRANS PNP DARL 100V 5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 3A, 2V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W | auf Bestellung 26000 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB63SM48 ЕЛЕМ ВІДГ 8М ШИНОПР CANALIS 63А 400В Produktcode: 200031 | Werkzeuge und Geräte > Werkzeug und Vorrichtungen: Zubehör | Produkt ist nicht verfügbar | ||||||||||||||||||
| KSB707OTU | ON Semiconductor | Description: TRANS PNP 60V 7A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB707OTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP/7A/60V/TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB707OTU | ROHM Semiconductor | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB707RTU | ON Semiconductor | Description: TRANS PNP 60V 7A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB707RTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB707YTU | ON Semiconductor | Description: TRANS PNP 60V 7A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB707YTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP/7A/60V/TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB707YTU_Q | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB708OTU | ON Semiconductor | Description: TRANS PNP 80V 7A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB708RTU | ON Semiconductor | Description: TRANS PNP 80V 7A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB708YTU | ON Semiconductor | Description: TRANS PNP 80V 7A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB744AYSTU | ON Semiconductor | Trans GP BJT PNP 60V 3A 1000mW 3-Pin(3+Tab) TO-126 Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB744AYSTU | Rochester Electronics, LLC | Description: TRANS PNP 60V 3A TO126-3 | auf Bestellung 21120 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| KSB744OSTU | Fairchild Semiconductor | Description: TRANS PNP 45V 3A TO-126 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB744YSTU | Rochester Electronics, LLC | Description: TRANS PNP 45V 3A TO126-3 | auf Bestellung 1918 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| KSB772 | onsemi | PNP/3A/40V TO-126 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772-Y-S | auf Bestellung 4450 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| KSB772-YS | auf Bestellung 22500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| KSB772OS | auf Bestellung 8200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| KSB772OS | onsemi | Description: TRANS PNP 30V 3A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772OS | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772OS | Fairchild Semiconductor | Description: TRANS PNP 30V 3A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W | auf Bestellung 4404 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB772YS | ONSEMI | Description: ONSEMI - KSB772YS - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1972 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| KSB772YS | onsemi | Description: TRANS PNP 30V 3A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W | auf Bestellung 45721 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB772YS | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Bag | auf Bestellung 1972 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB772YS Produktcode: 191559 | Transistoren > Bipolar-Transistoren PNP | Produkt ist nicht verfügbar | ||||||||||||||||||
| KSB772YS | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Bag | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772YS | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Bag | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| KSB772YS | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Bag | auf Bestellung 1358 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB772YS | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | auf Bestellung 11694 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB772YS | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Bag | auf Bestellung 1358 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB772YS | ONSEMI | Category: PNP THT transistors Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO Mounting: THT Case: TO126ISO Frequency: 80MHz Collector-emitter voltage: 30V Current gain: 160...320 Collector current: 3A Pulsed collector current: 7A Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar Kind of package: bulk | auf Bestellung 1937 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB772YS | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Bag | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772YS | Fairchild Semiconductor | Description: TRANS PNP 30V 3A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W | auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB772YS | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Bag | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772YS | ONSEMI | Category: PNP THT transistors Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO Mounting: THT Case: TO126ISO Frequency: 80MHz Collector-emitter voltage: 30V Current gain: 160...320 Collector current: 3A Pulsed collector current: 7A Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar Kind of package: bulk Anzahl je Verpackung: 1 Stücke | auf Bestellung 1937 Stücke: Lieferzeit 7-14 Tag (e) |
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| KSB772YS | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Bag | auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB772YSTSSTU | onsemi | Description: TRANS PNP 30V 3A TO-126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772YSTSSTU | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772YSTSTU | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772YSTSTU | onsemi | Description: TRANS PNP 30V 3A TO-126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772YSTU | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB772YSTU | onsemi | Description: TRANS PNP 30V 3A TO-126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| KSB772YSTU | FAIRCHILD | TO-126F | auf Bestellung 209280 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB772YSTU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | auf Bestellung 3354 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB772YSTU | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Tube | auf Bestellung 3840 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB772YSTU | Fairchild Semiconductor | Description: TRANS PNP 30V 3A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W | auf Bestellung 607808 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB772YSTU | FAIRCHILD | TO-126 | auf Bestellung 5760 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB772YSTU | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Tube | auf Bestellung 1920 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB772YSTU | onsemi | Description: TRANS PNP 30V 3A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W | auf Bestellung 21203 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB772YSTU | ONSEMI | Description: ONSEMI - KSB772YSTU - Bipolarer Einzeltransistor (BJT), PNP, 30 V, 3 A, 10 W, TO-126, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 30hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 3A MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 10W Bauform - Transistor: TO-126 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 30V productTraceability: No Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| KSB772YSTU | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Tube | auf Bestellung 2003 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB772YSTU | ON Semiconductor | Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Tube | auf Bestellung 13440 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB774YS | Samsung | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB794OSTU | ON Semiconductor | Description: TRANS PNP DARL 60V 1.5A TO-126 | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB795OSTU | onsemi | Description: TRANS PNP DARL 80V 1.5A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 2V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB798GTF | onsemi | Description: TRANS PNP 25V 1A SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 2 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB798GTF | Fairchild Semiconductor | Description: TRANS PNP 25V 1A SOT89-3 Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 110MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 2 W | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB798GTF | ON Semiconductor | Trans GP BJT PNP 25V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB798YTF | ON Semiconductor | Trans GP BJT PNP 25V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB798YTF | Rochester Electronics, LLC | Description: TRANS PNP 25V 1A SOT89-3 | auf Bestellung 1455 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| KSB810-Y | Samsung | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB810YTA | onsemi | Description: TRANS PNP 25V 0.7A TO92S Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Short Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 160MHz Supplier Device Package: TO-92S Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB811-G | Samsung | auf Bestellung 104000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| KSB811GBU | ON Semiconductor | Description: TRANS PNP 25V 1A TO-92S | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB811GTA | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO-92S | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB811OBU | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO-92S | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB811OTA | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO-92S | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB811YBU | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO-92S | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB811YTA | Fairchild Semiconductor | Description: TRANS PNP 25V 1A TO92S | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB834/D880Y | FSC | 08+ | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB834O | onsemi | Description: TRANS PNP 60V 3A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB834W | FAIRCHILD | 07+ TO-263 | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB834W | FAIRCHILD | TO-263 | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| KSB834WYTM | ON Semiconductor | Trans GP BJT PNP 60V 3A 1500mW 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB834WYTM | ONSEMI | KSB834WYTM PNP SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB834WYTM | onsemi | Description: TRANS PNP 60V 3A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-263 (D2Pak) Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W | auf Bestellung 809 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB834WYTM | onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil | auf Bestellung 777 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB834WYTM | ON Semiconductor | Trans GP BJT PNP 60V 3A 1500mW 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB834WYTM | onsemi | Description: TRANS PNP 60V 3A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-263 (D2Pak) Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB834Y | onsemi | Description: TRANS PNP 60V 3A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB834YTU | Fairchild Semiconductor | Description: TRANS PNP 60V 3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W | auf Bestellung 57492 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB834YTU | onsemi | Description: TRANS PNP 60V 3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB906YTU | ON Semiconductor | Description: TRANS PNP 60V 3A I-PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| KSB907TU | Fairchild Semiconductor | Description: TRANS PNP DARL 40V 3A I-PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| KSBG18-10DISPEN | BAHCO | KSBG18-10DISPEN Shears, Scissors, Knives | Produkt ist nicht verfügbar | |||||||||||||||||
| KSBK039624ET,5SG | Aavid | Thermal Interface Products Thermal Interface Material by Kuntze, KU-SBK-0396/24-ES-ST-0,5mm-SG | Produkt ist nicht verfügbar | |||||||||||||||||
| KSBK044031CST5G | Aavid | Thermal Interface Products Thermal Interface Material by Kuntze, KU-SBK-0440/3,1-CS-ST-0,5mm-SG | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSBK044040CST5G | Aavid | Heat Sinks Heat Sink Clip by Kuntze | Produkt ist nicht verfügbar | |||||||||||||||||
| KSBK0443CSST,6SG | Aavid | Heat Sinks Heat Sink Clip by Kuntze | Produkt ist nicht verfügbar |