Produkte > IPB
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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IPB009N03L G Produktcode: 132260 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
IPB009N03L G | Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 1880 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB009N03LGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 0.95mΩ Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB009N03LGATMA1 | Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB009N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-7-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB009N03LGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 0.95mΩ Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level | Produkt ist nicht verfügbar | |||||||||||||||||
IPB009N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB009N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB009N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-7-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB009N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB010N06N | Infineon | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB010N06N | Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 | auf Bestellung 898 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB010N06NATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 45A/180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V | auf Bestellung 4940 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB010N06NATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7 Technology: OptiMOS™ Mounting: SMD Case: PG-TO263-7 On-state resistance: 1mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 300W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 180A | Produkt ist nicht verfügbar | |||||||||||||||||
IPB010N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB010N06NATMA1 | INFINEON | Description: INFINEON - IPB010N06NATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 180 A, 800 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 800µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1625 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB010N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB010N06NATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7 Technology: OptiMOS™ Mounting: SMD Case: PG-TO263-7 On-state resistance: 1mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 300W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 180A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB010N06NATMA1 | Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 | auf Bestellung 1323 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB010N06NATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 45A/180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB010N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB010N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB011N04L G | Infineon Technologies | MOSFETs N-Ch 40V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 1895 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB011N04LGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 200µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 20 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB011N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB011N04LGATMA1 | Infineon Technologies | MOSFETs N-Ch 40V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 696 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB011N04LGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 200µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 20 V | auf Bestellung 2111 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB011N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04N | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IPB011N04N (Transistore) Produktcode: 50026 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||||
IPB011N04N G | Infineon Technologies | MOSFETs N-Ch 40V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 4787 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB011N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 249µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V | auf Bestellung 723 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB011N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 43A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 783 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB011N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 43A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04NF2SATMA1 | INFINEON | Description: INFINEON - IPB011N04NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 201 A, 740 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 201A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 740µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB011N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 249µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 43A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 783 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB011N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 43A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04NF2SATMA1 | INFINEON | Description: INFINEON - IPB011N04NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 201 A, 740 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 201A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 740µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB011N04NF2SATMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 266 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB011N04NG | Infineon technologies | auf Bestellung 15 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB011N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1180 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB011N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB011N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V | auf Bestellung 5166 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB011N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB011N04NGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04NGATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB011N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB011N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB011N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB011N04NGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB011N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB011N04NGATMA1 | INFINEON | Description: INFINEON - IPB011N04NGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 180 A, 900 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 250W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 900µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 900µohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1942 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB012N04NF2SATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | auf Bestellung 293 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB012N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 41A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB012N04NF2SATMA1 | INFINEON | Description: INFINEON - IPB012N04NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 197 A, 820 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 197A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 820µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 709 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB012N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 41A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB012N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 197A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 189µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB012N04NF2SATMA1 | INFINEON | Description: INFINEON - IPB012N04NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 197 A, 820 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 197A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 820µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 709 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB012N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 41A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB012N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 197A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 189µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB012N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 41A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB013N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 246µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB013N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 40A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB013N06NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 798 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB013N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 246µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V | auf Bestellung 930 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB014N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 38A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB014N04NF2SATMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB014N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 38A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB014N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 126µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB014N04NF2SATMA1 | INFINEON | Description: INFINEON - IPB014N04NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 191 A, 0.00103 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 191A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 188W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00103ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 788 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB014N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 38A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB014N04NF2SATMA1 | INFINEON | Description: INFINEON - IPB014N04NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 191 A, 0.00103 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 191A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 188W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00103ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 788 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB014N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 38A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB014N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 126µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V | auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB014N06N | Infineon technologies | auf Bestellung 7 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB014N06N | Infineon Technologies | MOSFETs N-Ch 60V 180A D2PAK-6 | auf Bestellung 129 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB014N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB014N06NATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 34A/180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 143µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB014N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB014N06NATMA1 | Infineon Technologies | MOSFETs N-Ch 60V 180A D2PAK-6 | auf Bestellung 601 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB014N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB014N06NATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 34A/180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 143µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V | auf Bestellung 2738 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB014N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB014N06NATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB014N06NATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB014N06NE8197ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R (incomplete reels from part IPB014N06NATMA1) | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04L G | Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 200µA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V | auf Bestellung 1514 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB015N04LGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB015N04LGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04LGATMA1 | Infineon Technologies | MOSFETs N-Ch 40V 120A D2PAK-2 OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 200µA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04N Produktcode: 62499 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
IPB015N04N G | Infineon Technologies | MOSFETs N-Ch 40V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB015N04NGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04NGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB015N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V | auf Bestellung 3145 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB015N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB015N04NGATMA1 | Infineon Technologies | MOSFETs N-Ch 40V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB015N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB015N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB015N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N06NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 719 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB015N06NF2SATMA1 | INFINEON | Description: INFINEON - IPB015N06NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 195 A, 0.0012 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 195A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0012ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 803 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB015N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 186µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V | auf Bestellung 686 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB015N06NF2SATMA1 | INFINEON | Description: INFINEON - IPB015N06NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 195 A, 0.0012 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 195A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0012ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 803 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB015N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 186µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N08N5 | Infineon Technologies | MOSFET TRENCH 40<-<100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N08N5ATMA1 | INFINEON | Description: INFINEON - IPB015N08N5ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 180 A, 0.0011 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pins Produktpalette: OptiMOS 5 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0011ohm | auf Bestellung 2285 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB015N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 279µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N08N5ATMA1 | Infineon Technologies | MOSFETs N-Ch 80V 180A D2PAK-2 | auf Bestellung 5048 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB015N08N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 180A Power dissipation: 375W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB015N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 279µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V | auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB015N08N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 180A Power dissipation: 375W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB016N06L3 G | Infineon Technologies | MOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 1919 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB016N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB016N06L3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB016N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB016N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB016N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 196µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB016N06L3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB016N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB016N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB016N06L3GATMA1 | INFINEON | Description: INFINEON - IPB016N06L3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 180 A, 0.0012 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 rohsCompliant: YES Dauer-Drainstrom Id: 180 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 250 Gate-Source-Schwellenspannung, max.: 1.7 euEccn: NLR Verlustleistung: 250 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7 Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0012 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0012 SVHC: No SVHC (08-Jul-2021) | auf Bestellung 987 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB016N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB016N06L3GATMA1 | Infineon Technologies | MOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 719 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB016N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB016N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB016N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB016N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 196µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V | auf Bestellung 9363 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB016N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V | auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB016N08NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 695 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB016N08NF2SATMA1 | Infineon Technologies | SP005571685 | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB016N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N06N3 G | Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 771 Stücke: Lieferzeit 150-154 Tag (e) |
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IPB017N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB017N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N06N3GATMA1 | INFINEON | Description: INFINEON - IPB017N06N3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 180 A, 0.0013 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1011 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB017N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 196µA Supplier Device Package: PG-TO263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V | auf Bestellung 3397 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N06N3GATMA1 | Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 2848 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 196µA Supplier Device Package: PG-TO263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N06N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N06N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N06N3GXT | Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N08N5 | Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | auf Bestellung 336 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N08N5ATMA1 | Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | auf Bestellung 973 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N08N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N08N5ATMA1 | INFINEON | Description: INFINEON - IPB017N08N5ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 120 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 739 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB017N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V | auf Bestellung 2257 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N08N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 177A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N08N5ATMA1 | INFINEON | Description: INFINEON - IPB017N08N5ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 120 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 739 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB017N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N10N5 | Infineon | auf Bestellung 987 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB017N10N5 | Infineon Technologies | Trans MOSFET N-CH 100V 180A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB017N10N5 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N10N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 375W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N10N5ATMA1 | INFINEON | Description: INFINEON - IPB017N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 180 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3639 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB017N10N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 279µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N10N5ATMA1 | Infineon Technologies | MOSFETs N-Ch 100V 180A D2PAK-2 | auf Bestellung 5910 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N10N5ATMA1 | INFINEON | Description: INFINEON - IPB017N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 180 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3639 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB017N10N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 279µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V | auf Bestellung 2259 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N10N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 375W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N10N5E8187ATMA1 | Infineon Technologies | OptiMOS5Power-Transistor,100VPG-TO 263-7 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N10N5LFATMA1 | Infineon Technologies | MOSFETs DIFFERENTIATED MOSFETS | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N10N5LFATMA1 | INFINEON | Description: INFINEON - IPB017N10N5LFATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 180 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 313W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 7680 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB017N10N5LFATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 270µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB017N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB017N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 578 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB017N10N5LFATMA1 | INFINEON | Description: INFINEON - IPB017N10N5LFATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 180 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 313W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 7680 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB017N10N5LFATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 270µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V | auf Bestellung 781 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB018N06NF2SATMA1 | INFINEON | Description: INFINEON - IPB018N06NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 187 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 187A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 188W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB018N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB018N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB018N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB018N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 187A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 129µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V | auf Bestellung 442 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB018N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 23200 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB018N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB018N06NF2SATMA1 | INFINEON | Description: INFINEON - IPB018N06NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 187 A, 0.0015 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 187A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 188W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB018N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 187A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 129µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB018N06NF2SATMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 95 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB018N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB018N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB018N10N5ATMA1 | INFINEON | Description: INFINEON - IPB018N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 176 A, 0.0017 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 176A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0017ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1408 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB018N10N5ATMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB018N10N5ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 176A (Tc) Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 270µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V | auf Bestellung 339 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB018N10N5ATMA1 | INFINEON | Description: INFINEON - IPB018N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 176 A, 0.0017 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 176A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0017ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1408 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB018N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 33A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB018N10N5ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 176A (Tc) Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 270µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N06L3 G | Infineon Technologies | MOSFETs N-Ch 60V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 677 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB019N06L3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 948 Stücke: Lieferzeit 7-14 Tag (e) |
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IPB019N06L3GATMA1 | Infineon Technologies | MOSFETs N-Ch 60V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 6129 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 196µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V | auf Bestellung 7726 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N06L3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar | auf Bestellung 948 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 196µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N08N3 G | Infineon Technologies | MOSFETs N-Ch 80V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 1006 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N08N3 G | Infineon | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB019N08N3G | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 80V Drain current: 180A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N08N3G | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 80V Drain current: 180A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N08N3G | Infineon Technologies | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 270µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V | auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1780 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 855 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1780 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N08N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 80V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 944 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 270µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V | auf Bestellung 7622 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N08N3GATMA1 | INFINEON | Description: INFINEON - IPB019N08N3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 180 A, 0.0016 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0016ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1440 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB019N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB019N08N5ATMA1 | Infineon Technologies | Trench Power Transistor IC | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N08N5ATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 224W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 154µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 224W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 154µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V | auf Bestellung 581 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N08N5ATMA1 | Infineon Technologies | Trench Power Transistor IC | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N08NF2SATMA1 | INFINEON | Description: INFINEON - IPB019N08NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 166 A, 0.0016 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 166A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0016ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB019N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 194µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V | auf Bestellung 257 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N08NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 31A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N08NF2SATMA1 | INFINEON | Description: INFINEON - IPB019N08NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 166 A, 0.0016 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 166A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0016ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB019N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 194µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB019N08NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 31A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N08NF2SATMA1 | Infineon Technologies | SP005571690 | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB019N08NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 31A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 30400 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N08NF2SATMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 1098 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N04N G | Infineon Technologies | MOSFETs N-Ch 40V 140A D2PAK-6 OptiMOS 3 | auf Bestellung 899 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N04NGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Power dissipation: 167W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 140A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: PG-TO263-7-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V | auf Bestellung 3448 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 140A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: PG-TO263-7-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N04NGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Power dissipation: 167W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 3515 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB020N08N5ATMA1 | Infineon Technologies | MOSFETs N-Ch 80V 120A D2PAK-2 | auf Bestellung 1420 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 173A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB020N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 208µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V | auf Bestellung 5315 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 173A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 173A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB020N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 208µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N10N5 | Infineon Technologies | MOSFETs N-Ch 100V 120A D2PAK-2 | auf Bestellung 370 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N10N5 | Infineon | auf Bestellung 215 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB020N10N5ATMA1 | INFINEON | Description: INFINEON - IPB020N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0017 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0017ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2531 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB020N10N5ATMA1 | Infineon Technologies | MOSFETs N-Ch 100V 120A D2PAK-2 | auf Bestellung 1195 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N10N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 176A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB020N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 176A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N10N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N10N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V | auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N10N5ATMA1 | INFINEON | Description: INFINEON - IPB020N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0017 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0017ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2531 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB020N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 176A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N10N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N10N5LF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 313W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N10N5LF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 313W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020N10N5LFATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 176A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 176A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N10N5LFATMA1 | INFINEON | Description: INFINEON - IPB020N10N5LFATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0018 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 313W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1510 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB020N10N5LFATMA1 | Infineon | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB020N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1830 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB020N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1830 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB020N10N5LFATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 176A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 176A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V | auf Bestellung 1519 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020N10N5LFATMA1 | INFINEON | Description: INFINEON - IPB020N10N5LFATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0018 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 313W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1510 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB020N10N5LFATMA1 | Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | auf Bestellung 1947 Stücke: Lieferzeit 150-154 Tag (e) |
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IPB020N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB020N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020NE7N3 G | Infineon | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB020NE7N3 G | Infineon Technologies | MOSFETs N-Ch 75V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 2841 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020NE7N3G | Rochester Electronics, LLC | Description: IPB020NE7 - 12V-300V N-CHANNEL P | auf Bestellung 5372 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB020NE7N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020NE7N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB020NE7N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 75V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 273µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V | auf Bestellung 7859 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020NE7N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020NE7N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB020NE7N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 75V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 273µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB020NE7N3GATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB021N06N3 G | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
IPB021N06N3G | Rochester Electronics, LLC | Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB021N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 196µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB021N06N3GXT | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB022N04L G | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB022N04LG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 95µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V | auf Bestellung 1840 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB022N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 90A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 95µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB022N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 95µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB022N04LGXT | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB022N12NM6ATMA1 | Infineon Technologies | TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB023N04N G | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
IPB023N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 30A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 794 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB023N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 81µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB023N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 30A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB023N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 30A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB023N04NF2SATMA1 | INFINEON | Description: INFINEON - IPB023N04NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 122 A, 0.0019 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 122A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0019ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB023N04NF2SATMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 284 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB023N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 30A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 794 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB023N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 81µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V | auf Bestellung 761 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB023N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 30A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB023N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 30A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB023N04NF2SATMA1 | INFINEON | Description: INFINEON - IPB023N04NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 122 A, 0.0019 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 122A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0019ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB023N04NG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB023N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 90A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB023N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB023N04NGXT | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB023N06N3 G | Infineon Technologies | MOSFET N-Ch 60V 140A D2PAK-6 | auf Bestellung 393 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB023N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 140A TO263-7 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB023N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 140A TO263-7 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB023N06N3GXT | Infineon Technologies | Trans MOSFET N-CH 60V 140A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB024N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 166A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB024N08N5ATMA1 | INFINEON | Description: INFINEON - IPB024N08N5ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 120 A, 0.0021 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 214W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0021ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB024N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 166A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB024N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 154µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB024N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB024N08N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 120A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB024N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 166A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB024N08N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 120A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB024N08N5ATMA1 | INFINEON | Description: INFINEON - IPB024N08N5ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 120 A, 0.0021 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 214W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0021ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB024N08N5ATMA1 | Infineon Technologies | MOSFETs N-Ch 80V 120A D2PAK-2 | auf Bestellung 1001 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB024N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 166A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB024N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 154µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB024N08NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 22A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB024N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V | auf Bestellung 725 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB024N08NF2SATMA1 | Infineon Technologies | SP005571694 | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB024N08NF2SATMA1 | INFINEON | Description: INFINEON - IPB024N08NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 161 A, 0.002 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 161A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 690 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB024N08NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 369 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB024N08NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 22A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 29600 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB024N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB024N08NF2SATMA1 | INFINEON | Description: INFINEON - IPB024N08NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 161 A, 0.002 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 161A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 690 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB024N10N5ATMA1 | INFINEON | Description: INFINEON - IPB024N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 180 A, 0.002 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB024N10N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 183µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 50 V | auf Bestellung 463 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB024N10N5ATMA1 | INFINEON | Description: INFINEON - IPB024N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 180 A, 0.002 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 250W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.002ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB024N10N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 183µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB024N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB024N10N5ATMA1 | Infineon Technologies | MOSFETs DIFFERENTIATED MOSFETS | auf Bestellung 2949 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB024N10N5E8197ATMA1 | Infineon Technologies | IPB024N10N5E8197ATMA1 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB025N08N3 G | Infineon Technologies | MOSFETs N-Ch 80V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 7883 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB025N08N3 G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 270µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB025N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V | auf Bestellung 14144 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB025N08N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB025N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N08N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB025N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V | auf Bestellung 13000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB025N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB025N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N08N3GATMA1 | INFINEON | Description: INFINEON - IPB025N08N3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 120 A, 0.002 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5592 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB025N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB025N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB025N10N3 G | Infineon Technologies | MOSFETs N-Ch 100V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB025N10N3GATMA1 Produktcode: 133145 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
IPB025N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB025N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N10N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V | auf Bestellung 7185 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB025N10N3GATMA1 | INFINEON | Description: INFINEON - IPB025N10N3GATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 180 A, 0.002 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 12771 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB025N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 3800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N10N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V | auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB025N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB025N10N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 100V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 3906 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB025N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N10N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced | auf Bestellung 527 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N10N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 527 Stücke: Lieferzeit 7-14 Tag (e) |
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IPB025N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N10N3GE8187ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO263-7 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB025N10N3GE818XT | Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB025N10N3GE8197ATMA1 | Infineon Technologies | SP001227196 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB025N10N3GE8197ATMA1 | Infineon Technologies | SP001227196 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB026N06N | Infineon Technologies | Description: MOSFET N-CH 60V 25A TO263-3 | auf Bestellung 1928 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB026N06N | Infineon Technologies | Description: MOSFET N-CH 60V 25A TO263-3 | auf Bestellung 1928 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB026N06N | Infineon Technologies | MOSFETs N-Ch 60V 100A D2PAK-2 | auf Bestellung 1501 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB026N06N | Infineon Technologies | Description: MOSFET N-CH 60V 25A TO263-3 | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB026N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB026N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB026N06NATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 25A/100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 75µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB026N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB026N06NATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 136W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB026N06NATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 136W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB026N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 22000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB026N06NATMA1 | Infineon Technologies | MOSFETs N-Ch 60V 100A D2PAK-2 | auf Bestellung 1116 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB026N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB026N06NATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 25A/100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 75µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V | auf Bestellung 2911 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB026N10NF2SATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 788 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB026N10NF2SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB026N10NF2SATMA1 | INFINEON | Description: INFINEON - IPB026N10NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 162 A, 0.0022 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 162A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0022ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 414 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB026N10NF2SATMA1 | Infineon Technologies | SP005571706 | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB026N10NF2SATMA1 | INFINEON | Description: INFINEON - IPB026N10NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 162 A, 0.0022 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 162A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0022ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 414 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB026N10NF2SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V | auf Bestellung 1224 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB027N10N3 G | Infineon | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB027N10N3 G | Infineon Technologies | MOSFETs N-Ch 100V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 7364 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB027N10N3 G | Infineon Technologies | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N3GATMA1 | INFINEON | Description: INFINEON - IPB027N10N3GATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0023ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4351 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB027N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB027N10N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V | auf Bestellung 10037 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB027N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB027N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1850 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 100V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 1779 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB027N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1256 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB027N10N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB027N10N3GATMA1 | INFINEON | Description: INFINEON - IPB027N10N3GATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0023ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4371 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB027N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1256 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB027N10N3GE8187ATMA1 | Infineon Technologies | Description: MOSFET Packaging: Bulk Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
IPB027N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 166A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB027N10N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB027N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 166A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 736 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N5ATMA1 | INFINEON | Description: INFINEON - IPB027N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 166 A, 0.0024 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 166A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1139 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB027N10N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 184µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB027N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 166A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB027N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 166A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2064 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 166A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB027N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 166A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N5ATMA1 | INFINEON | Description: INFINEON - IPB027N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 166 A, 0.0024 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 166A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1139 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB027N10N5ATMA1 | Infineon Technologies | MOSFETs N-Ch 100V 120A D2PAK-2 | auf Bestellung 841 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB027N10N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 184µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V | auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N06N3 G | Infineon Technologies | MOSFETs N-Ch 60V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 1935 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB029N06N3GATMA1 | Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 5214 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V | auf Bestellung 29169 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N06N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB029N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB029N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB029N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V | auf Bestellung 28000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N06N3GATMA1 Produktcode: 150736 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
IPB029N06N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB029N06N3GE8187ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB029N06N3GE8187ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB029N06N3GE8187ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB029N06N3GE8187ATMA1 | Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB029N06N3GE8187ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB029N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 26A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB029N06NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 70A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 80µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V | auf Bestellung 1613 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 70A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 80µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB030N08N3 G | Infineon Technologies | MOSFETs N-Ch 80V 160A D2PAK-6 OptiMOS 3 | auf Bestellung 2671 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB030N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 160A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 155µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB030N08N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB030N08N3GATMA1 | INFINEON | Description: INFINEON - IPB030N08N3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 160 A, 0.0025 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 214W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0025ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2267 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB030N08N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB030N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 160A Automotive 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB030N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 160A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 155µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V | auf Bestellung 2725 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB031N08N5 | Infineon Technologies | MOSFETs N-Ch 80V 120A D2PAK-2 | auf Bestellung 767 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB031N08N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 167W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB031N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V | auf Bestellung 5372 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB031N08N5ATMA1 | Infineon Technologies | MOSFETs N-Ch 80V 120A D2PAK-2 | auf Bestellung 1036 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB031N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB031N08N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 167W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB031N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB031N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB031N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB031NE7N3 G | Rochester Electronics, LLC | Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB031NE7N3 G | Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB031NE7N3G | Infineon Technologies | Description: IPB031NE7 - 12V-300V N-CHANNEL P | Produkt ist nicht verfügbar | |||||||||||||||||
IPB031NE7N3GATMA1 | Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | auf Bestellung 2000 Stücke: Lieferzeit 304-308 Tag (e) |
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IPB031NE7N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB031NE7N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3 Power dissipation: 214W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 75V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB031NE7N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 75V 100A TO263-3-2 | auf Bestellung 3216 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB031NE7N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 874 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB031NE7N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3 Power dissipation: 214W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 75V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB032N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 166A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB032N10N5ATMA1 | INFINEON | Description: INFINEON - IPB032N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 166 A, 0.0028 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 166A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 187W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0028ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 555 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB032N10N5ATMA1 | Infineon | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB032N10N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 166A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 125µA Supplier Device Package: PG-TO263-7 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB032N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 166A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB032N10N5ATMA1 | INFINEON | Description: INFINEON - IPB032N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 166 A, 0.0028 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 166A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 187W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 187W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0028ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0028ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 555 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB032N10N5ATMA1 | Infineon Technologies | MOSFETs DIFFERENTIATED MOSFETS | auf Bestellung 1170 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB032N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 166A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB032N10N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 166A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 125µA Supplier Device Package: PG-TO263-7 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V | auf Bestellung 1432 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB033N10N5LF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 108A Power dissipation: 179W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB033N10N5LF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 108A Power dissipation: 179W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB033N10N5LFATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 120A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 50 V | auf Bestellung 3468 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB033N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 159A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1030 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB033N10N5LFATMA1 | INFINEON | Description: INFINEON - IPB033N10N5LFATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0027ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4868 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB033N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 159A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1030 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB033N10N5LFATMA1 | Infineon Technologies | MOSFETs DIFFERENTIATED MOSFETS | auf Bestellung 5618 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB033N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB033N10N5LFATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 120A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB033N10N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 159A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB033N10N5LFATMA1 | INFINEON | Description: INFINEON - IPB033N10N5LFATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0027ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4868 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB034N03L G | Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N03LG | INF | 07+ | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB034N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 80A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 785 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB034N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 80A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 80A D2PAK | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB034N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N06L3 G | Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N06L3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 167W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 90A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 93µA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V | auf Bestellung 1062 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB034N06L3GATMA1 | Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N06L3GATMA1 | INFINEON | Description: INFINEON - IPB034N06L3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 90 A, 0.0027 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0027ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1857 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB034N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 93µA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB034N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB034N06L3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 167W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N06N3G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V | auf Bestellung 3146 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB034N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 100A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TO263-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 100A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TO263-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N06N3GATMA2 | Infineon Technologies | N-channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N06N3GATMA2 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB034N06N3GATMA2 | Infineon Technologies | MOSFET TRENCH 40<-<100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB035N08N3 G | Infineon Technologies | MOSFETs N-Ch 80V 100A D2PAK-2 OptiMOS 3 | auf Bestellung 454 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB035N08N3 G | Infineon | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB035N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 155µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB035N08N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3 On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 100A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB035N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB035N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 155µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V | auf Bestellung 1941 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB035N08N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3 On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 100A | Produkt ist nicht verfügbar | |||||||||||||||||
IPB035N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB035N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB035N08N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 80V 100A D2PAK-2 OptiMOS 3 | auf Bestellung 562 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB035N12NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||
IPB035N12NM6ATMA1 | Infineon Technologies | IPB035N12NM6ATMA1 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB035N12NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB036N12N3 G | Infineon Technologies | MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB036N12N3 G | Infineon Technologies | Description: MOSFET N-CH 120V 180A TO263-7 | auf Bestellung 5518 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB036N12N3 G | Infineon | auf Bestellung 270 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB036N12N3 G | Infineon Technologies | Description: MOSFET N-CH 120V 180A TO263-7 | auf Bestellung 5518 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB036N12N3G | Infineon technologies | auf Bestellung 188 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB036N12N3GATMA1 | INFINEON | Description: INFINEON - IPB036N12N3GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 180 A, 0.0029 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0029ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 6629 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB036N12N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 120V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB036N12N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB036N12N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 On-state resistance: 3.6mΩ Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 180A Kind of channel: enhanced Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB036N12N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB036N12N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 120V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V | auf Bestellung 2010 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB036N12N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 120V 180A D2PAK-6 OptiMOS 3 | auf Bestellung 3344 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB036N12N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 On-state resistance: 3.6mΩ Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 180A Kind of channel: enhanced Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB036N12N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB037N06N3 G | Infineon Technologies | Description: MOSFET N-CH 60V 90A TO263-3 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB037N06N3 G | Infineon Technologies | MOSFETs N-Ch 60V 90A D2PAK-2 OptiMOS 3 | auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB037N06N3 G | Infineon Technologies | Description: MOSFET N-CH 60V 90A TO263-3 | auf Bestellung 2504 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB037N06N3 G | INF | TO-263 | auf Bestellung 28000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB037N06N3 G | Infineon Technologies | Description: MOSFET N-CH 60V 90A TO263-3 | auf Bestellung 2504 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB037N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB037N06N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB037N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 90A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V | auf Bestellung 3745 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB037N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB037N06N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB037N06N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 60V 90A D2PAK-2 OptiMOS 3 | auf Bestellung 792 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB038N12N3 G | Infineon Technologies | MOSFETs N-Ch 120V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 6170 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB038N12N3 G | Infineon | auf Bestellung 252 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB038N12N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1680 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB038N12N3GATMA1 | Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | auf Bestellung 2684 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB038N12N3GATMA1 | INFINEON | Description: INFINEON - IPB038N12N3GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 120 A, 0.0032 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0032ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 323 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB038N12N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 120V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB038N12N3GATMA1 | INFINEON TECHNOLOGIES | IPB038N12N3GATMA1 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
IPB038N12N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB038N12N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB038N12N3GATMA1 | INFINEON | Description: INFINEON - IPB038N12N3GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 120 A, 0.0032 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0032ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 323 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB038N12N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 120V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V | auf Bestellung 430 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB039N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N04LGXT | Infineon Technologies | Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N10N3 G | Infineon Technologies | MOSFETs N-Ch 100V 160A D2PAK-6 OptiMOS 3 | auf Bestellung 3913 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB039N10N3 G | Infineon | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB039N10N3G | Infineon technologies | auf Bestellung 39 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB039N10N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 160A On-state resistance: 3.9mΩ Type of transistor: N-MOSFET Power dissipation: 214W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB039N10N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 160A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 160µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V | auf Bestellung 29657 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB039N10N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 100V 160A D2PAK-6 OptiMOS 3 | auf Bestellung 1425 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB039N10N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 160A On-state resistance: 3.9mΩ Type of transistor: N-MOSFET Power dissipation: 214W | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N10N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 160A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 160µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V | auf Bestellung 29000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB039N10N3GATMA1 | INFINEON | Description: INFINEON - IPB039N10N3GATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 160 A, 0.0033 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 214W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4304 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB039N10N3GE8187ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 160A | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N10N3GE8187ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 160A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 160µA Supplier Device Package: PG-TO263-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N10N3GE8187ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N10N3GE8197ATMA1 | Infineon Technologies | SP001227198 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N10N3GE8197ATMA1 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 160µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB039N10N3GE8197ATMA1 | Infineon Technologies | SP001227198 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB03N03LA | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB03N03LA | INF | TO-263 | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB03N03LA | INFINEON | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB03N03LA | INF | 07+; | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB03N03LA | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB03N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB03N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB03N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB03N03LAG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB03N03LAG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V | auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB03N03LB | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB03N03LB | Infineon Technologies | Description: MOSFET N-CH 30V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7624 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB03N03LB | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB03N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7624 pF @ 15 V | auf Bestellung 787 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB03N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7624 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB03N03LBG | Infineon Technologies | Description: OPTLMOS N-CHANNEL POWER MOSFET | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB0401NM5S | Infineon | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB0401NM5SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Part Status: Active | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB0401NM5SATMA1 | Infineon Technologies | SP004565816 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB0401NM5SATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB0401NM5SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
IPB040N08NF2SATMA1 | Infineon Technologies | SP005571698 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB040N08NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 787 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB040N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V | auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB040N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB041N04N G | INF | TO-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB041N04N G | Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB041N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB041N04NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB041N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB041N04NGXT | Infineon Technologies | Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N03L G | Infineon Technologies | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N03L G | INF | TO-263 | auf Bestellung 28000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB042N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 70A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 70A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N03LGATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10N3 G | Infineon | auf Bestellung 167000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB042N10N3 G | Infineon Technologies | Trans MOSFET N-CH 100V 137A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB042N10N3 G | Infineon Technologies | MOSFETs N-Ch 100V 100A D2PAK-2 OptiMOS 3 | auf Bestellung 3462 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB042N10N3 G | Infineon Technologies | Trans MOSFET N-CH 100V 137A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB042N10N3 G E8187 | Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10N3GATMA1 | INFINEON | Description: INFINEON - IPB042N10N3GATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0036 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 214W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0036ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3894 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB042N10N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V | auf Bestellung 37235 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB042N10N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB042N10N3GATMA1 Produktcode: 117738 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
IPB042N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB042N10N3GATMA1 | INFINEON | Description: INFINEON - IPB042N10N3GATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0036 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 214W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0036ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3894 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB042N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB042N10N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V | auf Bestellung 37000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB042N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1685 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB042N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB042N10N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 100V 100A D2PAK-2 OptiMOS 3 | auf Bestellung 13495 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB042N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB042N10N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB042N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB042N10N3GE8187ATMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10N3GE8187ATMA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10N3GE8187ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10N3GE8187ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10N3GE818XT | Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10NF2SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10NF2SATMA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
IPB042N10NF2SATMA1 | Infineon Technologies | SP005557198 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB043N10NF2SATMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB043N10NF2SATMA1 | INFINEON | Description: INFINEON - IPB043N10NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 135 A, 0.0038 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 135A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: TBC Gate-Source-Schwellenspannung, max.: 3.8V euEccn: TBC Verlustleistung: 167W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0038ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB043N10NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 21A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB043N10NF2SATMA1 | Infineon Technologies | Description: AUTOMOTIVE MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 135A (Tc) Rds On (Max) @ Id, Vgs: 4.35mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 93µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V | auf Bestellung 456 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB043N10NF2SATMA1 | INFINEON | Description: INFINEON - IPB043N10NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 135 A, 0.0038 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 135A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: TBC Gate-Source-Schwellenspannung, max.: 3.8V euEccn: TBC Verlustleistung: 167W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0038ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB043N10NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 21A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB043N10NF2SATMA1 | Infineon Technologies | Description: AUTOMOTIVE MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 135A (Tc) Rds On (Max) @ Id, Vgs: 4.35mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 93µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB044N15N5 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB044N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 174A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB044N15N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 174A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 87A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 75 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB044N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 174A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB044N15N5ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 10318 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB044N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 174A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB044N15N5ATMA1 | INFINEON | Description: INFINEON - IPB044N15N5ATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 174 A, 0.0034 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 174A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0034ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3324 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB044N15N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 123A; Idm: 696A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 123A Pulsed drain current: 696A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB044N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 174A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB044N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 174A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB044N15N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 174A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 87A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 75 V | auf Bestellung 1390 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB044N15N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 123A; Idm: 696A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 123A Pulsed drain current: 696A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB044N15N5ATMA1 | INFINEON | Description: INFINEON - IPB044N15N5ATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 174 A, 0.0034 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 174A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0034ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3324 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB044N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 174A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB044N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 174A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB044N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 174A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 974 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB044N15N5E8187ATMA1 | Infineon Technologies | SP004531436 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N06L | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB048N06L | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB048N06LG | INFINEON | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB048N06LG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-TO-263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N06LG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB048N06LG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB048N06LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N06LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N06LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N06LGXT | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N06LGXT | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N15N5 | Infineon | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB048N15N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 120A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB048N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 953 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB048N15N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 118A Pulsed drain current: 480A Power dissipation: 300W Case: PG-TO 263-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 952 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB048N15N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 118A Pulsed drain current: 480A Power dissipation: 300W Case: PG-TO 263-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N15N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 120A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V | auf Bestellung 1842 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB048N15N5ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 503 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB048N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 953 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB048N15N5LF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 115A Power dissipation: 313W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N15N5LF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 115A Power dissipation: 313W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB048N15N5LFATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 255µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 75 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB048N15N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB048N15N5LFATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 308 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB048N15N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB048N15N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB048N15N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB048N15N5LFATMA1 | Infineon | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB048N15N5LFATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 255µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 75 V | auf Bestellung 1399 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB048N15N5LFATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1006 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB049N06L3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049N08N5ATMA1 | Infineon Technologies | MOSFETs N-Ch 80V 80A D2PAK-2 | auf Bestellung 646 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB049N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 66µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049N08N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 320A; 125W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 320A Power dissipation: 125W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.9mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049N08N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 320A; 125W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 320A Power dissipation: 125W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.9mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 66µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 40 V | auf Bestellung 1859 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB049NE7N3 G | Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB049NE7N3G | Infineon technologies | auf Bestellung 366 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB049NE7N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049NE7N3GATMA1 | Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | auf Bestellung 564 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB049NE7N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB049NE7N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 75V 80A D2PAK | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB049NE7N3GATMA1 | INFINEON TECHNOLOGIES | IPB049NE7N3GATMA1 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049NE7N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB049NE7N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 75V 80A D2PAK | auf Bestellung 4680 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB04CN10NG | INFINEON | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB04CN10NGANBRUCH | INF | 0825 | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04CN10NGANBRUCH | inf | 07+ | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04CN10NGANBRUCH | Infineon Technologies | 07+ | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04CN10NGXT | Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03L | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04N03L | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04N03LA | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LA | INFINEON | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB04N03LA | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LA | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LA G | Infineon Technologies | MOSFET N-Ch 25V 80A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LA G | INF | TO-263 | auf Bestellung 62000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LAG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04N03LAG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LAG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04N03LAG | Infineon Technologies | MOSFET N-Ch 25V 80A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LAGATMA1 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LAT | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LAT | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V | auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB04N03LAT | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LB | Infineon Technologies | Description: MOSFET N-CH 30V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5203 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LB | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04N03LB | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LB | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB04N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5203 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB04N03LBG | Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB050N06N G | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
IPB050N06NG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB050N06NG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB050N06NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB050N06NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB050N06NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB050N06NGXT | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB050N10NF2SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V | auf Bestellung 767 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB050N10NF2SATMA1 | Infineon Technologies | SP005571710 | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB050N10NF2SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB050N10NF2SATMA1 | INFINEON | Description: INFINEON - IPB050N10NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 103 A, 0.0045 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 103A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0045ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB050N10NF2SATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB050N10NF2SATMA1 | INFINEON | Description: INFINEON - IPB050N10NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 103 A, 0.0045 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 103A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0045ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB051NE8N G | Infineon Technologies | MOSFET N-Ch 85V 100A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB051NE8NG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB051NE8NG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB051NE8NG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET | auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB051NE8NGATMA1 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB051NE8NGXT | Infineon Technologies | Trans MOSFET N-CH 85V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB051NE8NGXT | Infineon Technologies | Trans MOSFET N-CH 85V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB052N04N G | Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 | auf Bestellung 870 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB052N04N G | Infineon Technologies | Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
IPB052N04N G | INF | TO-263 | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB052N04NG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 33µA Supplier Device Package: PG-TO-263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V | auf Bestellung 1989 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB052N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 70A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 33µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB052N04NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 70A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 33µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB054N06N3 G | Infineon Technologies | MOSFETs N-Ch 60V 80A D2PAK-2 OptiMOS 3 | auf Bestellung 624 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB054N06N3G | Infineon technologies | auf Bestellung 161 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB054N06N3G | Infineon Technologies | Description: IPB054N06 - 12V-300V N-CHANNEL P Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 58µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB054N06N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 115W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB054N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1255 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB054N06N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 115W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB054N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 58µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB054N06N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 60V 80A D2PAK-2 OptiMOS 3 | auf Bestellung 645 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB054N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB054N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 58µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V | auf Bestellung 3053 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB054N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB054N08N3 G | Infineon Technologies | MOSFETs N-Ch 80V 80A D2PAK-2 OptiMOS 3 | auf Bestellung 1558 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB054N08N3G | Infineon technologies | auf Bestellung 1900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB054N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V | auf Bestellung 2888 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB054N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB054N08N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3 Kind of channel: enhanced On-state resistance: 5.4mΩ Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain current: 80A Power dissipation: 150W Polarisation: unipolar Drain-source voltage: 80V Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB054N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB054N08N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 80V 80A D2PAK-2 OptiMOS 3 | auf Bestellung 3285 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB054N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB054N08N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3 Kind of channel: enhanced On-state resistance: 5.4mΩ Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain current: 80A Power dissipation: 150W Polarisation: unipolar Drain-source voltage: 80V Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB054N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB055N03L G | Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | auf Bestellung 413 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB055N03L G Produktcode: 61412 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
IPB055N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB055N03LGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 68W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB055N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 50A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB055N03LGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 68W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB055N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 55µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB055N08NF2SATMA1 | Infineon Technologies | MOSFETs TRENCH 40<-<100V | auf Bestellung 638 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB055N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 55µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V | auf Bestellung 593 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB055N08NF2SATMA1 | Infineon Technologies | SP005571702 | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB056N06N | Infineon Technologies | MOSFET 60V TO-263 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB057N06N Produktcode: 176082 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
IPB057N06N | Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | auf Bestellung 259 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB057N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB057N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB057N06NATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3 Kind of channel: enhanced On-state resistance: 5.7mΩ Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain current: 45A Power dissipation: 83W Polarisation: unipolar Drain-source voltage: 60V Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB057N06NATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 17A/45A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 36µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V | auf Bestellung 444 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB057N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB057N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB057N06NATMA1 | Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | auf Bestellung 2068 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB057N06NATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3 Kind of channel: enhanced On-state resistance: 5.7mΩ Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain current: 45A Power dissipation: 83W Polarisation: unipolar Drain-source voltage: 60V Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ | Produkt ist nicht verfügbar | |||||||||||||||||
IPB057N06NATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB057N06NATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 17A/45A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 36µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05CN10N G | Infineon Technologies | Description: MOSFET N-CH 100V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05CN10NG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05CN10NG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05CN10NG | INFINE0N | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB05CN10NGXT | Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB05CN10NGXT | Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03 | INFINEON | TO-263 | auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N03L | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N03L | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N03L | INFINEON | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N03LA | INF | 07+; | auf Bestellung 3019 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 55A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LA | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N03LA | infineon | 04+ D2PAK | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 55A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB05N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LAG | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LAG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N03LAT | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LAT | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LAT | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LB | Infineon Technologies | Description: MOSFET N-CH 30V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LB | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LB | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N03LB G | INF | TO-263 | auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 80A TO263-3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LB G | Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB05N03LE3045A | INFINEON | 03+ TO-263 | auf Bestellung 650 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N06L | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N06L | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB05N06LG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB060N15N5ATMA1 | Infineon Technologies | OptiMOS 5 Power-Transistor, 150V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB060N15N5ATMA1 | Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | auf Bestellung 1299 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB060N15N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 136A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 180µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V | auf Bestellung 1564 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB060N15N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 136A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 180µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB060N15N5E8187ATMA1 | Infineon Technologies | SP001863630 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N03L G | Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | auf Bestellung 1810 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB065N03L G | INF | TO-263 | auf Bestellung 62000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB065N03LG | INF | 08+ | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB065N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 50A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N03LGATMA1 | Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | auf Bestellung 182 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
IPB065N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB065N06L G | Infineon Technologies | Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N06L G | Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N06L G | INF | TO-263 | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB065N06L G | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 80A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N06LG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 80A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N06LG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB065N06LG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB065N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 930 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB065N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N10N3GATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 1002 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB065N10N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N10N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N15N3 G | Infineon | auf Bestellung 19000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB065N15N3 G | Infineon Technologies | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | auf Bestellung 1198 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB065N15N3G | Infineon technologies | auf Bestellung 845 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB065N15N3GATMA1 | Infineon Technologies | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | auf Bestellung 87 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB065N15N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N15N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 130A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V | auf Bestellung 3627 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB065N15N3GATMA1 | INFINEON | Description: INFINEON - IPB065N15N3GATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 130 A, 0.0052 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 130A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0052ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1410 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB065N15N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N15N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3 On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 150V Drain current: 130A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N15N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB065N15N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3 On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 150V Drain current: 130A | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N15N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 130A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB065N15N3GATMA1 | INFINEON | Description: INFINEON - IPB065N15N3GATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 130 A, 0.0052 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 130A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0052ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1410 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB065N15N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB065N15N3GE8187ATMA1 | Infineon Technologies | Old Part IPB065N15N3GE8187XT^INFINEON | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N15N3GE8187ATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 130A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N15N3GE8197ATMA1 | Infineon Technologies | SP001227194 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB065N15N3GE8197ATMA1 | Infineon Technologies | SP001227194 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB067N08N3 G | Infineon Technologies | MOSFETs N-Ch 80V 80A D2PAK-2 OptiMOS 3 | auf Bestellung 1916 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB067N08N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 136W; PG-TO263-3 Mounting: SMD Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 80A On-state resistance: 6.7mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB067N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB067N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB067N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 73A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 73µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB067N08N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB067N08N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 136W; PG-TO263-3 Mounting: SMD Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 80A On-state resistance: 6.7mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB067N08N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 73A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 73µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V | auf Bestellung 5515 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB068N20NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 134A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 258µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V | auf Bestellung 895 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB068N20NM6ATMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 708 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB068N20NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 134A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 258µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB068N20NM6ATMA1 | Infineon Technologies | TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06CN10N G | Infineon Technologies | Description: MOSFET N-CH 100V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06CN10NG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06CN10NG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06CNE8NG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06CNE8NG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06N03 | INFINEON | TO-263 | auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06N03LA | INFINEON | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06N03LA | INF | 07+; | auf Bestellung 442 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06N03LA | INFINEON | 0544+ | auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06N03LA | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06N03LA | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06N03LA | INFINEON | 0237+ TO-263 | auf Bestellung 990 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06N03LA G | Infineon Technologies | MOSFET N-Ch 25V 50A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06N03LAG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06N03LAT | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06N03LAT | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06N03LB | Infineon Technologies | Description: MOSFET N-CH 30V 50A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06N03LB | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06N03LB | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06N03LB G | INF | TO-263 | auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB06N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 50A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06N03LBG | Infineon Technologies | MOSFET N-Channel MOSFET 20-200V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB06P001LATMA1 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB070N06L G | Infineon Technologies | Description: MOSFET N-CH 60V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 2V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB070N06L G | Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB070N06LG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB070N06LG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB070N06LGATMA1 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB070N06N G | Infineon Technologies | Description: MOSFET N-CHAN D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO263-3 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB070N06NG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB070N06NG | Infineon Technologies | MOSFET N-Channel MOSFET 20-200V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB070N06NG | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB070N06NGATMA1 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB072N15N3 G | Infineon | auf Bestellung 83000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB072N15N3 G | Infineon Technologies | MOSFETs N-Ch 150V 100A D2PAK-2 OptiMOS 3 | auf Bestellung 5683 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB072N15N3 G E8187 | Infineon Technologies | MOSFET PG-TO263-3-2 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB072N15N3G | Infineon | N-MOSFET 150V 100A 300W 7.2mΩ IPB072N15N3G Infineon TIPB072n15n3g Anzahl je Verpackung: 2 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IPB072N15N3G | Infineon | N-MOSFET 150V 100A 300W 7.2mΩ IPB072N15N3G Infineon TIPB072n15n3g Anzahl je Verpackung: 2 Stücke | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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IPB072N15N3G | Infineon Technologies | Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB072N15N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1919 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB072N15N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4673 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB072N15N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB072N15N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 100A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB072N15N3GATMA1 | INFINEON | Description: INFINEON - IPB072N15N3GATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0058ohm SVHC: To Be Advised | auf Bestellung 9652 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB072N15N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 100A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB072N15N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1919 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB072N15N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB072N15N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
IPB072N15N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1147 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB072N15N3GATMA1 | Infineon Technologies | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | auf Bestellung 3530 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB072N15N3GATMA1 | INFINEON | Description: INFINEON - IPB072N15N3GATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0058ohm SVHC: To Be Advised | auf Bestellung 9652 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB072N15N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 100A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V | auf Bestellung 3369 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB072N15N3GE8187ATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 100A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB073N15N5ATMA1 | INFINEON | Description: INFINEON - IPB073N15N5ATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 114 A, 0.0056 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 114A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 214W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0056ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3385 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB073N15N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 114A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 57A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 160µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB073N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 305 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB073N15N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Power dissipation: 214W Polarisation: unipolar Gate charge: 49nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 81A On-state resistance: 7.3mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB073N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB073N15N5ATMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 12436 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB073N15N5ATMA1 | INFINEON | Description: INFINEON - IPB073N15N5ATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 114 A, 0.0056 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 114A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 214W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0056ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4765 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
IPB073N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB073N15N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 114A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 57A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 160µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V | auf Bestellung 2416 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB073N15N5ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Power dissipation: 214W Polarisation: unipolar Gate charge: 49nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 81A On-state resistance: 7.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
IPB073N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB073N15N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 305 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB075N04LG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
IPB075N04LG | INFINEON | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB075N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 50A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB075N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 50A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB075N04LGXT | Infineon Technologies | Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
IPB07N03 | auf Bestellung 860 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
IPB07N03L | infineon | to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB07N03L | INFINEON | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB07N03L | INFINEON | TO263 | auf Bestellung 18200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB07N03L E3045A | Infineon | auf Bestellung 1564 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
IPB080N03L G | INF | TO-263 | auf Bestellung 46000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IPB080N03L G | Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
IPB080N03L G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V | auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB080N03LG | Infineon Technologies | Description: OPTLMOS N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
IPB080N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar |